# US 9,520,274 B2 · Ion implanter provided with a plurality of plasma source bodies

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 9,520,274 B2
- Document ID: US9520274B2
- Status: Granted
- Kind: B2
- Application number: 14/647,193
- Filed: 2013-11-25
- Published: 2015-11-12
- Granted: 2016-12-13
- Earliest claimed: 2012-11-27
- Assignees: Ion Beam Services
- Applicants: Ion Beam Services
- Inventors: Frank Torregrosa; Laurent Roux
- Web page: https://patentgrep.com/patent/US9520274B2

## CPC

- H01J 37/32357: {Generation remote from the workpiece, e.g. down-stream}
- H01J 37/32412: {Plasma immersion ion implantation}
- H01J 2237/31701: Ion implantation
- H01J 2237/3365: Plasma source implantation
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)

## Abstract

The invention relates to an ion implanter that comprises an enclosure ENV having arranged therein a substrate carrier PPS connected to a substrate power supply ALT via a high voltage electrical passage PET, the enclosure ENV being provided with pump means PP, PS, the enclosure ENV also having at least two cylindrical source bodies CS1, CS2 free from any obstacle and arranged facing the substrate carrier. This implanter is remarkable in that it includes at least one confinement coil BCI1-BCS1, BCI2-BCS2 per source body CS1, CS2.

## Claims

### Claim 1

An ion implanter for implanting ions in a substrate, said ion implanter comprising an enclosure having arranged therein a substrate carrier for carrying said substrate and connected to a substrate power supply via a high voltage electrical passage, the enclosure being provided with pump means, said enclosure (ENV) also having at least two cylindrical source bodies free from any obstacle and arranged facing said substrate carrier for simultaneous irradiation of said substrate; the ion implanter being characterized in that it includes at least one confinement coil per source body.

### Claim 2 (depends on 1)

An ion implanter according to claim 1, characterized in that each of said source bodies is provided with an external radiofrequency antenna.

### Claim 3 (depends on 1)

An ion implanter according to claim 1, characterized in that it includes a common radiofrequency generator for all of said antennas.

### Claim 4 (depends on 3)

An ion implanter according to claim 3, characterized in that it includes a single tuning box arranged between said radiofrequency generator and said antennas.

### Claim 5 (depends on 3)

An ion implanter according to claim 3, characterized in that it includes, downstream from said radiofrequency generator, a tuning box followed by a separator.

### Claim 6 (depends on 3)

An ion implanter according to claim 3, characterized in that it includes, downstream from said radiofrequency generator, a separator followed by a number of tuning boxes identical to the number of source bodies.

### Claim 7 (depends on 1)

An ion implanter according to claim 1, wherein said substrate carrier is configured to carry a substrate for ion implantation and said two source odies are arranged facing said substrate carrier for simultaneous irradiation of said substrate.