# US 9,520,266 B2 · Pattern critical dimension measurement equipment and method for measuring pattern critical dimension > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 9,520,266 B2 - Document ID: US9520266B2 - Status: Granted - Kind: B2 - Application number: 14/455,878 - Filed: 2014-08-09 - Published: 2015-02-12 - Granted: 2016-12-13 - Earliest claimed: 2013-08-09 - Assignees: Hitachi High-Technologies Corporation - Applicants: Hitachi High-Technologies Corporation - Inventors: Kaori Shirahata; Yasunari Sohda; Makoto Sakakibara; Daisuke Bizen; Hajime Kawano; Hideyuki Kazumi - Web page: https://patentgrep.com/patent/US9520266B2 ## CPC - H01J 37/244: Detectors; Associated components or circuits therefor - H01J 37/222: {Image processing arrangements associated with the tube} - G01B 2210/56: Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth - H01J 37/10: Lenses - H01J 37/147: Arrangements for directing or deflecting the discharge along a desired path ({H01J37/045 take precedence;} lenses H01J37/10) - H01J 37/28: with scanning beams {(H01J37/268, H01J37/292, H01J37/2955 take precedence)} - H01J 2237/2448: Secondary particle detectors - H01J 2237/2806: Secondary charged particle - H01J 2237/2817: Pattern inspection - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) - G01B: MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS ## Abstract Pattern critical dimension measurement equipment includes an electron source configured to generate a primary electron beam, a deflector configured to deflect the primary electron beam emitted from the electron source, a focusing lens configured to focus the primary electron beam deflected by the deflector, a decelerator configured to decelerate the primary electron beam that irradiates the sample, a first detector located between the electron source and the focusing lens, the first detector being configured to detect electrons at part of azimuths of electrons generated from the sample upon irradiation of the sample with the primary electron beam, and a second detector located between the electron source and the first detector, the second detector being configured to detect electrons at substantially all azimuths of the electrons generated from the sample. ## Claims ### Claim 1 Pattern critical dimension measurement equipment comprising: an electron source configured to generate a primary electron beam; a deflector configured to deflect the primary electron beam emitted from the electron source; a focusing lens configured to focus the primary electron beam deflected by the deflector; a decelerator configured to decelerate the primary electron beam that irradiates a sample; a first detector located between the electron source and the focusing lens, the first detector being configured to detect electrons at part of azimuths of electrons generated from the sample upon irradiation of the sample with the primary electron beam; and a second detector located between the electron source and the first detector, the second detector being configured to detect electrons at substantially all azimuths of the electrons generated from the sample. ### Claim 2 (depends on 1) The pattern critical dimension measurement equipment according to claim 1, further comprising an image processor configured to perform a process of determining brightness of edges of a pattern formed on the sample on the basis of a first image obtained with the first detector, a process of discriminating a projection and a recess of the pattern on the basis of a change in brightness level between adjacent edges, and a process of measuring a size of the projection or the recess from a second image obtained with the second detector. ### Claim 3 (depends on 2) The pattern critical dimension measurement equipment according to claim 2, wherein the first detector, the first electrode, and the second electrode are arranged so as to allow a direction in which a difference in brightness between adjacent edges of a pattern contained in the first image obtained with the first detector is maximum to coincide with a direction that is rotated by 45° with respect to a scanning direction of the primary electron beam. ### Claim 4 (depends on 1) The pattern critical dimension measurement equipment according to claim 1, wherein the first detector includes a reflector with a reflecting plane and a pore, the reflecting plane being impinged upon by electrons generated from the sample, and the pore being configured to allow the primary electron beam to pass therethrough, and a detection element configured to detect electrons generated from the reflector, and the pattern critical dimension measurement equipment further comprises: a first electrode located between the reflector and the detection element; and a second electrode located on a side opposite to the first electrode with an optical axis of the primary electron beam interposed therebetween. ### Claim 5 (depends on 4) The pattern critical dimension measurement equipment according to claim 4, further comprising a mechanism for changing a diameter of the pore of the reflector. ### Claim 6 (depends on 5) The pattern critical dimension measurement equipment according to claim 5, further comprising a controller configured to control at least one of a distance between the reflector and the sample, the pore diameter of the reflector, an operating condition of the decelerator, or an operating condition of the focusing lens, thereby allowing, of the electrons generated from the sample, most of secondary electrons with energy that is less than or equal to 50 [eV] to pass through the pore of the reflector and allowing most of electrons that impinge upon the reflector to become backscattered electrons with energy that is greater than or equal to 50 [eV] and less than or equal to an energy level of the primary electron beam. ### Claim 7 (depends on 5) The pattern critical dimension measurement equipment according to claim 5, further comprising a controller configured to perform a process of obtaining a first image from the first detector while changing a combination of a pore diameter of the reflector and an incident energy level of the primary electron beam on the sample, a process of determining a direction in which a difference in brightness between adjacent edges of a pattern contained in the first image is maximum, and a process of setting the pore diameter of the reflector so as to minimize a change in the direction in which the difference in brightness that depends on the incident energy level is maximum. ### Claim 8 (depends on 5) The pattern critical dimension measurement equipment according to claim 5, further comprising a controller configured to execute a process of irradiating the sample formed of an insulator with the primary electron beam while changing a pore diameter of the reflector and changing a scanning speed or an irradiation current amount of the primary electron beam, a process of determining a direction in which a difference in brightness between adjacent edges of a pattern contained in the first image detected by the first detector is maximum, and a process of setting the pore diameter of the reflector so as to minimize a change in the direction in which the difference in brightness that depends on the scanning speed or the irradiation current amount of the primary electron beam is maximum. ### Claim 9 (depends on 4) The pattern critical dimension measurement equipment according to claim 4, further comprising: a first voltage source configured to apply a voltage to the first electrode; a second voltage source configured to apply a voltage to the second electrode; and a controller configured to individually control the voltages applied to the first and second electrodes. ### Claim 10 (depends on 4) The pattern critical dimension measurement equipment according to claim 4, further comprising a controller configured to change a preset value of an astigmatic aberration corrector configured to correct astigmatic aberrations of the primary electron beam in accordance with a level of a voltage applied to the first electrode or the second electrode. ### Claim 11 (depends on 4) The pattern critical dimension measurement equipment according to claim 4, further comprising: a first voltage source configured to selectively apply a voltage to a plurality of sub-electrodes of the first electrode; a second voltage source configured to selectively apply a voltage to a plurality of sub-electrodes of the second electrode; and a controller configured to individually control the voltages applied to the first and second electrodes for each incident condition of the primary electron beam. ### Claim 12 (depends on 1) The pattern critical dimension measurement equipment according to claim 1, further comprising an image processor configured to execute a process of determining edge positions of a pattern formed on the sample on the basis of a second image obtained with the second detector, a process of determining brightness at the edge positions in a first image obtained with the first detector, a process of discriminating a projection and a recess of the pattern on the basis of a change in brightness level between adjacent edges, and a process of measuring a size of the projection or the recess on the basis of the second image obtained with the second detector. ### Claim 13 A pattern critical dimension measurement equipment comprising: an electron source configured to generate a primary electron beam; a deflector configured to deflect the primary electron beam emitted from the electron source; a focusing lens configured to focus the primary electron beam deflected by the deflector; a decelerator configured to decelerate the primary electron beam that irradiates a sample; a reflector located between the electron source and the focusing lens, the reflector being impinged upon by electrons generated from the sample upon irradiation of the sample with the primary electron beam; a first detector configured to detect electrons generated by the reflector; a first electrode located between the reflector and the first detector; a second electrode located on a side opposite to the first electrode with an optical axis of the primary electron beam interposed therebetween; and a controller configured to control levels of respective voltages applied to the first electrode and the second electrode, thereby controlling a detection rate of electrons generated by the reflector. ### Claim 14 (depends on 13) The pattern critical dimension measurement equipment according to claim 13, further comprising a controller configured to perform a process of discriminating a projection and a recess of the sample on the basis of a first image obtained with the first detector when a positive voltage is applied to each of the first electrode and the second electrode, and a process of measuring a size of the projection or the recess from a second image obtained with the first detector when a positive voltage is applied to the first electrode and a ground potential or a negative voltage is applied to the second electrode. ### Claim 15 A method for measuring a critical dimension of a pattern formed on a sample using a pattern critical dimension measurement equipment, wherein the pattern critical dimension measurement equipment includes an electron source configured to generate a primary electron beam, a deflector configured to deflect the primary electron beam emitted from the electron source, a focusing lens configured to focus the primary electron beam deflected by the deflector, a decelerator configured to decelerate the primary electron beam that irradiates the sample, a first detector located between the electron source and the focusing lens, the first detector being configured to detect electrons at part of azimuths of electrons generated from the sample upon irradiation of the sample with the primary electron beam, a second detector located between the electron source and the first detector, the second detector being configured to detect electrons at substantially all azimuths of the electrons generated from the sample, and an image processor configured to execute a process of measuring a dimension of the pattern, the method comprising the following processes performed by the image processor: a process of determining brightness of edges of a pattern formed on the sample on the basis of a first image obtained with the first detector; a process of discriminating a projection and a recess of the pattern on the basis of a change in brightness level between adjacent edges; and a process of measuring a size of the projection or the recess from a second image obtained with the second detector. ### Claim 16 (depends on 15) The method according to claim 15, wherein the first detector includes a reflector with a reflecting plane and a pore, the reflecting plane being impinged upon by electrons generated from the sample, and the pore being configured to allow the primary electron beam to pass therethrough, and also includes a detection element configured to detect electrons generated from the reflector, and the method further comprises a process of, when the pattern critical dimension measurement equipment includes a first electrode located between the reflector and the detection element, a second electrode located on a side opposite to the first electrode with an optical axis of the primary electron beam interposed therebetween, a first voltage source configured to selectively apply a voltage to a plurality of sub-electrodes of the first electrode, and a second voltage source configured to selectively apply a voltage to a plurality of sub-electrodes of the second electrode, individually controlling the voltages applied to the first and second electrodes for each incident condition of the primary electron beam. ### Claim 17 (depends on 15) The method according to claim 15, further comprising, when the first detector further includes a reflector with a reflecting plane and a pore, the reflecting plane being impinged upon by electrons generated from the sample, and the pore being configured to allow the primary electron beam to pass therethrough, and a detection element configured to detect electrons generated from the reflector, and the pattern critical dimension measurement equipment further includes a first electrode located between the reflector and the detection element, a second electrode located on a side opposite to the first electrode with an optical axis of the primary electron beam interposed therebetween, and a mechanism for changing a diameter of the pore of the reflector, a process of controlling at least one of a distance between the reflector and the sample, a pore diameter of the reflector, an operating condition of the decelerator, or an operating condition of the focusing lens, thereby allowing, of the electrons generated from the sample, most of secondary electrons with energy that is less than or equal to 50 [eV] to pass through the pore of the reflector and allowing most of electrons that impinge upon the reflector to become backscattered electrons with energy that is greater than or equal to 50 [eV] and less than or equal to an energy level of the primary electron beam. ### Claim 18 (depends on 15) The method according to claim 15, further comprising: a process of determining edge positions of a pattern formed on the sample on the basis of a second image obtained with the second detector; a process of determining brightness at the edge positions in the first image obtained with the first detector; a process of discriminating a projection and a recess of the pattern on the basis of a change in brightness level between adjacent edges, and a process of measuring a size of the projection or the recess from the second image obtained with the second detector. ### Claim 19 (depends on 15) The method according to claim 15, further comprising, when the first detector includes a reflector with a reflecting plane and a pore, the reflecting plane being impinged upon by electrons generated from the sample, and the pore being configured to allow the primary electron beam to pass therethrough, and a detection element configured to detect electrons generated from the reflector, and the pattern critical dimension measurement equipment further includes a first electrode located between the reflector and the detection element, a second electrode located on a side opposite to the first electrode with an optical axis of the primary electron beam interposed therebetween, and a mechanism for changing a diameter of the pore of the reflector: a process of obtaining a first image from the first detector by changing a combination of a pore diameter of the reflector and an incident energy level of the primary electron beam on the sample; a process of determining a direction in which a difference in brightness between adjacent edges of a pattern contained in the first image is maximum; and a process of setting the pore diameter of the reflector so as to minimize a change in the direction in which the difference in brightness that depends on the incident energy level is maximum. ### Claim 20 (depends on 15) The method according to claim 15, further comprising, when the first detector includes a reflector with a reflecting plane and a pore, the reflecting plane being impinged upon by electrons generated from the sample, and the pore being configured to allow the primary electron beam to pass therethrough, and a detection element configured to detect electrons generated from the reflector, and the pattern critical dimension measurement equipment further includes a first electrode located between the reflector and the detection element, a second electrode located on a side opposite to the first electrode with an optical axis of the primary electron beam interposed therebetween, and a mechanism for changing a diameter of the pore of the reflector: a process of irradiating the sample formed of an insulator with the primary electron beam while changing a pore diameter of the reflector or changing a scanning speed or an irradiation current amount of the primary electron beam; a process of determining a direction in which a difference in brightness between adjacent edges of a pattern contained in the first image obtained with the first detector is maximum; and a process of setting the pore diameter of the reflector so as to minimize a change in the direction in which the difference in brightness that depends on the scanning speed or the irradiation current amount of the primary electron beam is maximum.