# US 9,520,211 B2 · Method of forming upper electrode of nanowire array

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 9,520,211 B2
- Document ID: US9520211B2
- Status: Granted
- Kind: B2
- Application number: 14/386,863
- Filed: 2012-12-21
- Published: 2015-03-26
- Granted: 2016-12-13
- Earliest claimed: 2012-03-22
- Assignees: Korea Research Institute of Standards and Science
- Applicants: Korea Research Institute of Standards and Science
- Inventors: Woo Lee; Hee Han
- Web page: https://patentgrep.com/patent/US9520211B2

## CPC

- H01B 13/0036: {Details}
- B82Y 10/00: Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
- H01B 1/02: mainly consisting of metals or alloys
- H10D 62/122: {oriented at angles to substrates, e.g. perpendicular to substrates}
- H10D 62/83: being Group IV materials, e.g. B-doped Si or undoped Ge
- B82Y 20/00: Nanooptics, e.g. quantum optics or photonic crystals
- B82Y 40/00: Manufacture or treatment of nanostructures
- H10D 64/23: Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
- Y10T 29/49117: Conductor or circuit manufacturing
- H01B: CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES (selection for magnetic properties H01F1/00; waveguides H01P {; printed circuits H05K})
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

## Abstract

Provided are a method of forming an upper electrode of a nanowire array and a nanowire array having an upper electrode formed thereon. The method includes a step of placing a polymeric thin film layer, a step of pressing, a step of treating a mixed solution, a step of etching, and a step of depositing an electrode material, such that the upper electrode is reliably formed in a state in which the polymeric thin film layer is formed on a portion of the nanowire, thereby making it possible to implement various nano-devices based on the nanowire array aligned on a substrate having a large area.

## Claims

### Claim 1

A method of forming an upper electrode of a nanowire array in which a plurality of nanowires are arranged on a substrate having a plate shape, the method comprising:
a step of placing a polymeric thin film layer (S10), heating the nanowire array and placing a polymeric thin film layer on the heated nanowire array;
a step of pressing (S20), applying pressure to the polymeric thin film layer placed on the nanowire array in the step of placing the polymeric thin film layer (S10);
a step of treating a mixed solution (S30), dipping the nanowire array having the polymeric thin film layer pressed thereon in the mixed solution and removing a portion of the polymeric thin film layer;
a step of etching (S40), etching the polymeric thin film layer so that a portion of the nanowires passes through the polymeric thin film layer and is exposed to the outside; and
a step of depositing an electrode material (S50), depositing an electrode material on the nanowire exposed to the outside in the step of etching (S40).

### Claim 2 (depends on 1)

The method of claim 1, wherein the polymer thin film layer is formed to include a polymeric layer and an aluminum layer provided on the polymeric layer.

### Claim 3 (depends on 2)

The method of claim 2, wherein the polymeric layer is formed of thermoplastic polymer.

### Claim 4 (depends on 3)

The method of claim 3, wherein in the step of placing the polymeric thin film layer (S10), the nanowire array is heated to a temperature of a glass transition temperature that is within in a range of ±10° C. of the thermoplastic polymer forming the polymeric layer.

### Claim 5 (depends on 2)

The method of claim 2, wherein in the step of treating the mixed solution (S30), the mixed solution is a mixed solution of CuCl2.H2O and HCl, and the aluminum layer of the polymer thin film layer is removed.

### Claim 6 (depends on 1)

The method of claim 1, further comprising, before the step of placing the polymeric thin film layer (S10), a step of vertically aligning (S60), vertically aligning the nanowires.

### Claim 7 (depends on 1)

The method of claim 1, wherein in the step of pressing (S20), the polymeric thin film layer is pressed for 10 seconds or less.

### Claim 8 (depends on 1)

The method of claim 1, wherein in the step of etching (S40), the polymeric thin film layer is etched by an oxygen plasma apparatus.

### Claim 9 (depends on 1)

The method of claim 1, wherein in the step of depositing the electrode material (S50), the electrode material is gold.