# US 9,520,207 B2 · Single phase lead-free cubic pyrochlore bismuth zinc niobate-based dielectric materials and processes for manufacture

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- Number: US 9,520,207 B2
- Document ID: US9520207B2
- Status: Granted
- Kind: B2
- Application number: 14/708,392
- Filed: 2015-05-11
- Published: 2015-11-12
- Granted: 2016-12-13
- Earliest claimed: 2014-05-09
- Assignees: The Penn State University; National Science Foundation
- Applicants: The Penn State Research Foundation
- Inventors: Elizabeth K. Michael; Susan Trolier-McKinstry
- Web page: https://patentgrep.com/patent/US9520207B2

## CPC

- H01B 3/12: ceramics
- C04B 35/495: based on vanadium, niobium, tantalum, molybdenum or tungsten oxides or solid solutions thereof with other oxides, e.g. vanadates, niobates, tantalates, molybdates or tungstates
- C04B 35/632: Organic additives
- C04B 35/638: Removal thereof
- C04B 2235/3255: Niobates or tantalates, e.g. silver niobate
- C04B 2235/3284: Zinc oxides, zincates, cadmium oxides, cadmiates, mercury oxides, mercurates or oxide forming salts thereof
- C04B 2235/3298: Bismuth oxides, bismuthates or oxide forming salts thereof, e.g. zinc bismuthate
- C04B 2235/656: characterised by specific heating conditions during heat treatment
- H01B: CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES (selection for magnetic properties H01F1/00; waveguides H01P {; printed circuits H05K})
- C04B: LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE {(roofing granules E04D7/005)}; CERAMICS (devitrified glass-ceramics C03C10/00); REFRACTORIES; TREATMENT OF NATURAL STONE

## Abstract

Both single phase lead-free cubic pyrochlore bismuth zinc niobate (BZN)-based dielectric materials with a chemical composition of Bi1.5Zn(0.5+y)Nb(1.5−x)Ta(x)O(6.5+y), with 0≦x<0.23 and 0≦y<0.9 and films with these average compositions with Bi2O3 particles in an amorphous matrix and a process of manufacture thereof. The crystalline BZNT-based dielectric material has a relative permittivity of at least 120, a maximum applied electric field of at least 4.0 MV/cm at 10 kHz, a maximum energy storage at 25° C. and 10 kHz of at least 50 J/cm3 and a maximum energy storage at 200° C. and 10 kHz of at least 22 J/cm3. The process is a wet chemical process that produces thin films of Bi1.5Zn(0.5+y)Nb(1.5−x)Ta(x)O(6.5+y) without the use of 2-methoxyethanol and pyridine.

## Claims

### Claim 1

A dielectric material comprising:
a single phase lead-free cubic pyrochlore bismuth zinc niobate (BZN)-based dielectric material with a chemical composition of Bi1.5Zn(0.5+y)Nb(1.5−x)Ta(x)O(6.5+y), with 0.10≦x≦0.20 and 0.2≦y≦0.6;
said BZN-based dielectric material having at least one of a maximum applied electric field of at least 5.0 MV/cm at 10 kHz, a maximum energy storage at 25° C and 10 kHz of at least 60 J/cm3 and a maximum energy storage at 200° C and 10 kHz of at least 30 J/cm3 .

### Claim 2 (depends on 1)

The dielectric material of claim 1, wherein said BZN-based dielectric material has at least one of a maximum applied electric field of at least 4.5 MV/cm at 1 kHz, a maximum applied electric field of at least 4.7 MV/cm at 100 Hz, and a maximum electric field of at least 5.25 MV/cm at 10 kHz.

### Claim 3 (depends on 2)

The dielectric material of claim 2, wherein said BZN-based dielectric material has at least one of a maximum applied electric field of at least 5.0 MV/cm at 1 kHz, a maximum applied electric field of at least 5.2 MV/cm at 100 Hz, and a maximum electric field of at least 5.5 MV/cm at 10 kHz.

### Claim 4 (depends on 1)

The dielectric material of claim 1, wherein said BZN-based dielectric material has at least one of a maximum energy storage of at least 50 J/cm3 at 1 kHz and 25° C., a maximum energy storage electric storage of at least 63 J/cm3 at 10 kHz and 25° C, a maximum energy storage of at least 25 J/cm3 at 1 kHz and 200° C., and a maximum energy storage electric storage of at least 30 J/cm3 at 10 kHz and 200° C.

### Claim 5 (depends on 4)

The dielectric material of claim 4, wherein said BZN-based dielectric material has at least one of a maximum energy storage of at least 54 J/cm3 at 1 kHz and 25° C., a maximum energy storage electric storage of at least 66 J/cm3 at 10 kHz and 25° C., a maximum energy storage of at least 33 J/cm3 at 1 kHz and 200° C., and a maximum energy storage electric storage of at least 37 J/cm3 at 10 kHz and 200° C.