# US 9,520,186 B2 · Electronic device

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- Number: US 9,520,186 B2
- Document ID: US9520186B2
- Status: Granted
- Kind: B2
- Application number: 14/176,024
- Filed: 2014-02-07
- Published: 2015-03-26
- Granted: 2016-12-13
- Earliest claimed: 2013-09-25
- Assignees: SK hynix Inc.
- Applicants: SK Hynix Inc.
- Inventors: Hyo-June Kim; Ja-Chun Ku; Sung-Kyu Min; Seung-Beom Baek; Byung-Jick Cho; Won-Ki Ju; Hyun-Kyu Kim; Jong-Chul Lee
- Web page: https://patentgrep.com/patent/US9520186B2

## CPC

- G11C 13/0023: {Address circuits or decoders}
- G11C 13/0002: {using resistive RAM [RRAM] elements}
- G11C 13/0007: {comprising metal oxide memory material, e.g. perovskites}
- H10B 63/22: {of the metal-insulator-metal type}
- H10B 63/82: {the switching components having a common active material layer}
- H10B 63/84: {arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays}
- G11C 2213/71: Three dimensional array
- G11C 2213/78: Array wherein the memory cells of a group share an access device, all the memory cells of the group having a common electrode and the access device being not part of a word line or a bit line driver
- H10N 70/24: {based on migration or redistribution of ionic species, e.g. anions, vacancies}
- H10N 70/826: {adapted for essentially vertical current flow, e.g. sandwich or pillar type devices}
- H10N 70/8833: {Binary metal oxides, e.g. TaOx}
- G11C: STATIC STORES (semiconductor memory devices H10B)
- H10B: ELECTRONIC MEMORY DEVICES
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR

## Abstract

A semiconductor memory may include: a first stacked structure including a first word line disposed over a substrate and extended in a first direction, a first bit line disposed over the first word line and extended in a second direction crossing the first direction, and a first variable resistance layer interposed between the first word line and the first bit line; and a second stacked structure including a second bit line disposed over the first stacked structure and extended in the second direction, a second word line disposed over the second bit line and extended in the first direction, and a second variable resistance layer interposed between the second word line and the second bit line; and a first selecting element layer interposed between the first bit line and the second bit line.

## Claims

### Claim 1

An electronic device comprising a semiconductor memory,
wherein the semiconductor memory comprises:
a first stacked structure comprising a first word line disposed over a substrate and extended in a first direction, a first bit line disposed over the first word line and extended in a second direction crossing the first direction, and a first variable resistance layer interposed between the first word line and the first bit line; and
a second stacked structure comprising a second bit line disposed over the first stacked structure and extended in the second direction, a second word line disposed over the second bit line and extended in the first direction, and a second variable resistance layer interposed between the second word line and the second bit line; and
a first selecting element layer interposed between the first bit line and the second bit line: and
wherein the first variable resistance layer and the first selecting element layer form a first memory cell, and
wherein the second variable resistance layer and the first selecting element layer form a second memory cell.

### Claim 2 (depends on 1)

The electronic device of claim 1, wherein the first memory cell is controlled by the first word line and the second bit line, and wherein the second memory cell is controlled by the second word line and the first bit line.

### Claim 3 (depends on 2)

The electronic device of claim 2, wherein the first bit line is floated when the first memory cell is controlled, and
wherein the second bit line is floated when the second memory cell is controlled.

### Claim 4 (depends on 1)

The electronic device of claim 1, wherein the first selecting element layer is formed of NbO2.

### Claim 5 (depends on 1)

The electronic device of claim 1, wherein each of the first variable resistance layer and the second variable resistance layer comprises a structure in which an oxygen-poor metal oxide layer and an oxygen-rich metal oxide layer are stacked, and
wherein the first variable resistance layer and the second variable resistance layer are arranged symmetrical with each other with respect to the first selecting element layer interposed therebetween.

### Claim 6 (depends on 1)

The electronic device of claim 1, wherein the first variable resistance layer has an island shape at an intersection between the first word line and the first bit line.

### Claim 7 (depends on 1)

The electronic device of claim 1, wherein the first variable resistance layer has a line shape and extends in a same direction as the first word line or as the first bit line.

### Claim 8 (depends on 1)

The electronic device of claim 1, wherein the second variable resistance layer has an island shape at an intersection between the second word line and the second bit line.

### Claim 9 (depends on 1)

The electronic device of claim 1, wherein the second variable resistance layer has a line shape and extends in a same direction as the second word line or as the second bit line.

### Claim 10 (depends on 1)

The electronic device of claim 1, wherein the first selecting element layer has an island shape while overlapping an intersection between the first bit line and the first word line and an intersection between the second bit line and the second word line.

### Claim 11 (depends on 1)

The electronic device of claim 1, wherein the first selecting element layer has a line shape and extends in a same direction as at least one of the first bit line and the second bit line.

### Claim 12 (depends on 1)

The electronic device of claim 1, wherein one or more of the first variable resistance layer, the second variable resistance layer, and the first selecting element have a plate shape.

### Claim 13 (depends on 1)

The electronic device of claim 1, wherein an end part of the first bit line extends in the second direction further than an end part of the second bit line, and
wherein the semiconductor memory further comprises:
a first contact disposed over the protruding end part of the first bit line so as to be coupled to the first bit line; and
a second contact disposed over the end part of the second bit line so as to be coupled to the second bit line.

### Claim 14 (depends on 1)

The electronic device of claim 1, wherein the semiconductor memory further comprises:
a third stacked structure disposed over the second stacked structure and comprising the second word line, a third bit line disposed over the second word line and extended in the second direction, and a third variable resistance layer interposed between the second word line and the third bit line;
a fourth stacked structure disposed over the third stacked structure, and comprising a fourth bit line extended in the second direction, a third word line disposed over the fourth bit line and extended in the first direction, and a fourth variable resistance layer interposed between the third word line and the fourth bit line; and
a second selecting element layer interposed between the third stacked structure and the fourth stacked structure.

### Claim 15 (depends on 1)

The electronic device according to claim 1, further comprising a microprocessor which includes:
a control unit configured to receive a signal including a command from an outside of the microprocessor, and performs extracting, decoding of the command, or controlling of input or output signal of the microprocessor;
an operation unit configured to perform an operation in response to a result from the control unit which decodes the command; and
a memory unit configured to store data for performing the operation, data generated as a result of the operation, or an address of data designating a location where any of the data for performing the operation and the data corresponding to the result of the operation is stored, and
wherein the semiconductor memory is part of the memory unit in the microprocessor.

### Claim 16 (depends on 1)

The electronic device according to claim 1, further comprising a processor which includes:
a core unit configured to perform, in response to a command inputted from an outside of the processor, an operation corresponding to the command;
a cache memory unit configured to store data for performing the operation, data generated as a result of the operation, or an address designating a location where any of the data for performing the operation and the data generated as a result of the operation is stored; and
a bus interface connected between the core unit and the cache memory unit and configured to transmit data between the core unit and the cache memory unit,
wherein the semiconductor memory is part of the cache memory unit in the processor.

### Claim 17 (depends on 1)

The electronic device according to claim 1, further comprising a processing system which includes:
a processor configured to decode a command received by the processor and control an operation for information in response to the decoded command;
an auxiliary memory device configured to store a program for decoding the command and the information;
a main memory device configured to call and store the program and the information from the auxiliary memory device such that the processor can perform the operation using the program and the information when the program is executed; and
an interface device configured to perform communication between at least one of the processor, the auxiliary memory device, and the main memory device and the outside,
wherein the semiconductor memory is part of the auxiliary memory device or the main memory device in the processing system.

### Claim 18 (depends on 1)

The electronic device according to claim 1, further comprising a data storage system which includes:
a storage device configured to store data and retain stored data regardless of power supply;
a controller configured to control input and output data to and from the storage device according to a command inputted form an outside;
a temporary storage device configured to temporarily store data exchanged between the storage device and the outside; and
an interface configured to perform communication among the storage device, the controller, the temporary storage device, and the outside,
wherein the semiconductor memory is part of the storage device or the temporary storage device in the data storage system.

### Claim 19 (depends on 1)

The electronic device according to claim 1, further comprising a memory system which includes:
a memory configured to store data and retain stored data regardless of power supply;
a memory controller configured to control input and output data to and from the memory according to a command inputted form an outside;
a buffer memory configured to buffer data exchanged between the memory and the outside; and
an interface configured to perform communication among the memory, the memory controller, the buffer memory, and the outside,
wherein the semiconductor memory is part of the memory or the buffer memory in the memory system.

### Claim 20

An electronic device comprising a semiconductor memory,
wherein the semiconductor memory comprises:
first and second word lines extended in a first direction;
first and second bit lines extended in a second direction crossing the first direction;
a first variable resistance element coupled to the first word line and the first bit line;
a second variable resistance element coupled to the second word line and the second bit line; and
a selecting element coupled between the first bit line and the second bit line so that the selecting element is coupled in series to the first variable resistance element and to the second variable resistance element; and
wherein the first variable resistance element and the selecting element form a first memory cell, and wherein the second variable resistance element and the selecting element form a second memory cell.

### Claim 21 (depends on 20)

The electronic device of claim 20, wherein the first memory cell is controlled by the first word line and the second bit line, and wherein the second memory cell is controlled by the second word line and the first bit line.

### Claim 22 (depends on 21)

The electronic device of claim 21, wherein the first bit line is floated when the first memory cell is controlled, and
wherein the second bit line is floated when the second memory cell is controlled.