# US 9,520,169 B2 · Semiconductor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 9,520,169 B2 - Document ID: US9520169B2 - Status: Granted - Kind: B2 - Application number: 14/769,616 - Filed: 2014-02-18 - Published: 2015-12-31 - Granted: 2016-12-13 - Earliest claimed: 2013-02-25 - Assignees: Longitude Semiconductor S.a.r.l. - Applicants: PS4 Luxco S.a.r.l. - Inventors: Yoshinori Matsui - Web page: https://patentgrep.com/patent/US9520169B2 ## CPC - G11C 7/222: {Clock generating, synchronizing or distributing circuits within memory device} - G11C 7/22: Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management - G11C 7/225: {Clock input buffers} - G11C 11/4076: Timing circuits (for regeneration management G11C11/406) - G11C 2207/2272: Latency related aspects - G11C: STATIC STORES (semiconductor memory devices H10B) ## Abstract One semiconductor device includes a clock signal buffer circuit which, in response to activation of a chip selection signal (CS_n), starts generation of an internal clock signal PCLKAR, and internal circuits which operate in synchronization with the internal clock signal PCLKAR. The clock signal buffer circuit suspends generation of the internal clock signal PCLKAR at a second timing if command signals (CA0 to CA9) indicate read commands, and suspends generation of the internal clock signal PCLKAR at a first timing which is earlier than the second timing if the command signals (CA0 to CA9) indicate active commands. According to one embodiment, an internal clock signal is generated only for periods necessary in accordance with external command signals. ## Claims ### Claim 1 A semiconductor device comprising: a first circuit for generating a second clock signal in accordance with a first clock signal; a second circuit for generating an internal command signal synchronous with the second clock signal in accordance with an external command signal input synchronously with the first clock signal; and a third circuit for activating the first circuit throughout a predetermined period corresponding to the first period, in accordance with a chip select signal input synchronously with the first clock signal; wherein, when the external command signal exhibits a first value, the first circuit stops the second clock signal in response to a first period having elapsed from input of the external command signal, and when the external command signal exhibits a second value different than the first value, the first circuit stops the second clock signal in response to a second period longer than the first period having elapsed from input of the external command signal. ### Claim 2 (depends on 1) The semiconductor device as claimed in claim 1, wherein the first circuit starts to generate the second clock signal in response to activation of the chip select signal. ### Claim 3 (depends on 2) The semiconductor device as claimed in claim 2, wherein the first circuit continues to generate the second clock signal until the first period has elapsed from input of the external command signal, regardless of the value of the external command signal. ### Claim 4 (depends on 1) The semiconductor device as claimed in claim 1, further comprising a memory cell array having a plurality of memory cells, wherein the first value of the external command signal includes at least one of an active command showing an active operation with respect to the memory cell array or a precharge command showing a precharge operation with respect to the memory cell array. ### Claim 5 (depends on 1) The semiconductor device as claimed in claim 1, further comprising a memory cell array having a plurality of memory cells, wherein the second value of the external command signal includes at least one of a read command showing a read operation with respect to the memory cell array or a write command showing a write operation with respect to the memory cell array. ### Claim 6 (depends on 5) The semiconductor device as claimed in claim 5, wherein the write command includes a first write command for which a precharge operation is not automatically performed with respect to the memory cell array after completion of a write operation, and a second write command for which a precharge operation is automatically performed after completion of the write operation; wherein, when the external command signal exhibits the first write command, the first circuit stops the second clock signal in response to the second period having elapsed from input of the external command signal, and wherein, when the external command signal exhibits the second write command, the first circuit stops the second clock signal in response to a third period longer than the second period having elapsed from input of the external command signal. ### Claim 7 (depends on 1) The semiconductor device as claimed in claim 1, further comprising a mode register in which an operating mode of the semiconductor device is set, wherein the second value of the external command signal includes a mode register read command showing a read operation with respect to the mode register. ### Claim 8 A semiconductor device comprising: a clock signal buffer circuit for starting generation of an internal clock signal in response to activation of a chip select signal; and an internal circuit which operates synchronously with the internal clock signal, wherein, when a command signal input synchronously with the chip select signal shows a predetermined command, the clock signal buffer circuit stops generation of the internal clock signal at a second timing, and when the command signal shows a different command than the predetermined command, the clock signal buffer circuit stops generation of the internal clock signal at a first timing which is earlier than the second timing. ### Claim 9 (depends on 8) The semiconductor device as claimed in claim 8, wherein the internal circuit includes a command decoder for decoding the command signal. ### Claim 10 (depends on 8) The semiconductor device as claimed in claim 8, further comprising a data output circuit for outputting read data, wherein the internal circuit includes an output clock generation circuit for supplying an output clock signal to the data output circuit. ### Claim 11 (depends on 10) The semiconductor device as claimed in claim 10, wherein the predetermined command includes a read command instructing output of the read data. ### Claim 12 (depends on 8) The semiconductor device as claimed in claim 8, further comprising a data input circuit for inputting write data, wherein the internal circuit includes an input clock generation circuit for supplying an input clock signal to the data input circuit. ### Claim 13 (depends on 12) The semiconductor device as claimed in claim 12, wherein the predetermined command includes a write command instructing input of the write data. ### Claim 14 A semiconductor device comprising: a clock signal generation circuit for generating an internal clock on the basis of an external clock; a clock buffer circuit for buffering and outputting the internal clock; and a command decoding circuit for decoding a command supplied from the outside and generating a decoded signal, in accordance with the internal clock output from the clock buffer circuit, wherein the clock buffer circuit outputs the internal clock signal in accordance with a chip select signal, and stops output of the internal clock signal in accordance with the command decoded signal.