# US 9,519,269 B2 · High frequency piezoelectric crystal composites, devices, and methods for manufacturing the same

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- Number: US 9,519,269 B2
- Document ID: US9519269B2
- Status: Granted
- Kind: B2
- Application number: 13/821,400
- Filed: 2011-10-13
- Published: 2013-08-15
- Granted: 2016-12-13
- Earliest claimed: 2010-10-13
- Assignees: CTS Corporation
- Applicants: Pengdi Han; Jian Tian; Kevin Meneou; Brandon Stone
- Inventors: Pengdi Han; Jian Tian; Kevin Meneou; Brandon Stone
- Web page: https://patentgrep.com/patent/US9519269B2

## CPC

- H10N 30/852: {Composite materials, e.g. having 1-3 or 2-2 type connectivity}
- A61B 8/00: Diagnosis using ultrasonic, sonic or infrasonic waves
- A61B 8/4483: {characterised by features of the ultrasound transducer}
- C01G 33/006: {Compounds containing niobium, with or without oxygen or hydrogen, and containing two or more other elements}
- C04B 35/491: based on lead zirconates and lead titanates {, e.g. PZT}
- C04B 35/495: based on vanadium, niobium, tantalum, molybdenum or tungsten oxides or solid solutions thereof with other oxides, e.g. vanadates, niobates, tantalates, molybdates or tungstates
- C04B 35/499: containing also titanates
- C30B 29/30: Niobates; Vanadates; Tantalates
- C30B 29/32: Titanates; Germanates; Molybdates; Tungstates
- G03H 3/00: Holographic processes or apparatus using ultrasonic, sonic or infrasonic waves for obtaining holograms; Processes or apparatus for obtaining an optical image from them (G03H1/22 takes precedence)
- H03H 9/02015: {Characteristics of piezoelectric layers, e.g. cutting angles}
- H10N 30/082: by etching, e.g. lithography
- H10N 30/088: by cutting or dicing
- H10N 30/8554: {Lead-zirconium titanate [PZT] based}
- C01P 2002/50: Solid solutions
- C01P 2004/03: obtained by SEM
- C04B 2235/3206: Magnesium oxides or oxide-forming salts thereof
- C04B 2235/3215: Barium oxides or oxide-forming salts thereof
- C04B 2235/3224: Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
- C04B 2235/3234: Titanates, not containing zirconia
- C04B 2235/3236: Alkaline earth titanates
- C04B 2235/3249: containing also titanium oxide or titanates, e.g. lead zirconate titanate (PZT)
- C04B 2235/3255: Niobates or tantalates, e.g. silver niobate
- C04B 2235/3286: Gallium oxides, gallates, indium oxides, indates, thallium oxides, thallates or oxide forming salts thereof, e.g. zinc gallate
- C04B 2235/3296: Lead oxides, plumbates or oxide forming salts thereof, e.g. silver plumbate
- C04B 2235/3298: Bismuth oxides, bismuthates or oxide forming salts thereof, e.g. zinc bismuthate
- C04B 2235/76: Crystal structural characteristics, e.g. symmetry
- C04B 2235/768: Perovskite structure ABO3
- C04B 2235/96: Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
- H10N 30/8548: {Lead-based oxides}
- Y10T 29/42: Piezoelectric device making
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- A61B: DIAGNOSIS; SURGERY; IDENTIFICATION (usefulness limited to only animals A61D)
- C01G: COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F (metal hydrides {monoborane, diborane or addition complexes thereof} C01B6/00; salts of oxyacids of halogens C01B11/00; peroxides, salts or peroxyacids C01B15/00; thiosulfates, dithionites, polythionates C01B17/64; compounds containing selenium, or tellurium C01B19/00; binary compounds of nitrogen with metals C01B21/06; azides C01B21/08; {compounds containing nitrogen, other non-metals and metal C01B21/082}; metal amides C01B21/092; nitrites C01B21/50; {compounds of noble gases C01B23/0005}; phosphides C01B25/08; salts of oxyacids of phosphorus C01B25/16; carbides C01B32/90; compounds containing silicon C01B33/00; compounds containing boron C01B35/00; compounds having molecular sieve properties but not having base-exchange properties C01B37/00; compounds having molecular sieve and base-exchange properties, e.g. crystalline zeolites, C01B39/00; cyanides C01C3/08; salts of cyanamide C01C3/16; thiocyanates C01C3/20)
- C04B: LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE {(roofing granules E04D7/005)}; CERAMICS (devitrified glass-ceramics C03C10/00); REFRACTORIES; TREATMENT OF NATURAL STONE
- C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR
- G03H: HOLOGRAPHIC PROCESSES OR APPARATUS (holograms, e.g. point holograms, used as ordinary optical elements G02B5/32; producing stereoscopic or other three-dimensional effects G02B30/00; diffraction-grating systems G02B27/44; systems using moiré fringes G02B27/60; optical logic elements G02F3/00; stereo-photography G03B35/00; photosensitive materials or processes for photographic purposes G03C; {stereo-photographic or similar processes G03C9/00}; apparatus for processing exposed photographic materials G03D; analogue computers performing mathematical operations with the aid of optical elements G06E3/00; authentication by radiation, of concealed information carried by holograms or diffraction gratings G06K19/16; holographic storage G11B7/0065, G11C13/04; {stereoscopic or other three dimensional effects in television systems H04N13/00})
- H03H: IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS (waveguides, resonators, lines or other devices of the waveguide type H01P)
- C01P: INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

## Abstract

The present invention generally relates to high frequency piezoelectric crystal composites, devices, and method for manufacturing the same. In adaptive embodiments an improved imaging device, particularly a medical imaging device or a distance imaging device, for high frequency (>20 MHz) applications involving an imaging transducer assembly is coupled to a signal imagery processor. Additionally, the proposed invention presents a system for photolithography based micro-machined piezoelectric crystal composites and their uses resulting in improved performance parameters.

## Claims

### Claim 1

A piezoelectric PMN-PT based crystal composite, said piezoelectric crystal composite having a crystal composition with one lead-free component, and being represented by the formula:
x*ABO3-y*PbTiO3-(1-x-y)*Pb(Mg1/3Nb2/3)O3;
wherein,
x is defined as molar % 0.00 to 0.50;
y is defined as molar % 0.00 to 0.50;
A represents Bismuth (Bi) or Barium (Ba);
B represents one selected from the group consisting of: Indium (In), Ytterbium (Yb), Iron (Fe), Zirconium (Zr), Scandium (Sc), Niobium (Nb), Tantalum (Ta), and a combination of these elements,
wherein when said crystal composite is (011) cut and <011> poled and provides zero strain in the direction of +/−32.5° (+/−2.5°) away from the <011> direction according to the coordinate rotation d31 formula:
d′31=d31*Cos(θ)*Cos(θ)+d32*Sin(θ)*Sin(θ).

### Claim 2 (depends on 1)

The piezoelectric al composite, according to claim 1, in further combination with:
an additive, said additive being selected from the group consisting of: Manganese (Mn) of up to 5% (wt %) and Cerium (Ce) of up to 10% (wt %) of a total batch weight.

### Claim 3 (depends on 2)

The piezoelectric crystal composite, according to claim 2, wherein:
said crystal composite has a thickness electromechanical coupling factor kt of about 0.65 to 0.90.

### Claim 4 (depends on 1)

The piezoelectric crystal composite, according to claim 1, wherein:
said crystal composite is operative at a frequency of at least 20 MHz.

### Claim 5 (depends on 4)

The piezoelectric crystal composite, according to claim 4, wherein:
said crystal composite is operative at a frequency of at least 80 MHz.

### Claim 6 (depends on 1)

The piezoelectric crystal composite, according to claim 1, in further combination with:
a medical imaging device configured for operative ultrasound imaging.