# US 9,519,220 B2 · Method, photolithography method, and method of manufacturing a semiconductor device using a pellicle film

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- Number: US 9,519,220 B2
- Document ID: US9519220B2
- Status: Granted
- Kind: B2
- Application number: 14/706,980
- Filed: 2015-05-08
- Published: 2016-02-18
- Granted: 2016-12-13
- Earliest claimed: 2014-08-12
- Assignees: Samsung Electronics Co., Ltd.
- Applicants: Su-Young Lee; Tae-Geun Kim; Jong-Gul Doh
- Inventors: Su-Young Lee; Tae-Geun Kim; Jong-Gul Doh
- Web page: https://patentgrep.com/patent/US9519220B2

## CPC

- G03F 7/2004: {characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light}
- G03F 1/62: Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
- G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G)

## Abstract

A pellicle for an EUV lithography may include a pellicle film, a supporting structure and a handling block. The pellicle film may have a first surface for orienting opposite to a mask, and a second surface opposite to the first surface and for orienting toward the mask. The pellicle film may allow the EUV, which may pass through the mask, to penetrate the pellicle film. The supporting structure may be arranged on the second surface of the pellicle film to support the pellicle film. The handling block may be arranged on the first surface of the pellicle film. The handling block may have an opening configured to expose the pellicle film. Thus, the pellicle may be handled using the thick handling block, not the thin pellicle film, so that the thin pellicle film may not be damaged. The pellicle may protect the mask from byproducts generated in the EUV lithography process so that the mask may not be contaminated.

## Claims

### Claim 1

A method, comprising:
providing a semiconductor substrate;
providing a mask above the semiconductor substrate;
forming a film structure, including:
providing a pellicle film having a plate shape that includes a first surface and a second surface opposite the first surface,
forming a supporting structure on the first surface of the pellicle film, the supporting structure having a having a mesh pattern,
forming a handling structure on the second surface of the pellicle film, the handling structure including a handling substrate with an opening formed therethrough, and
removing the handling structure from the pellicle film by performing a cutting operation; and
transmitting ultraviolet light through the mask and the film structure to form patterns on the semiconductor substrate.

### Claim 2 (depends on 1)

The method of claim 1, wherein:
as a result of the cutting operation, an outer side surface of the pellicle film is coplanar with an outer side surface of the supporting structure.

### Claim 3 (depends on 1)

The method of claim 1, further comprising:
prior to forming the handling structure on the second surface of the pellicle film, forming an etch stop layer on the second surface of the pellicle film.

### Claim 4 (depends on 3)

The method of claim 3, further comprising:
after forming the etch stop layer on the second surface of the pellicle film, forming the handling substrate on the etch stop layer.

### Claim 5 (depends on 4)

The method of claim 4, further comprising:
forming the opening in the handling substrate by performing wet etching; and
removing a portion of the etch stop layer formed that corresponds to the opening by performing dry etching.

### Claim 6 (depends on 1)

The method of claim 1, wherein:
prior to the cutting operation, the supporting structure includes a plurality of holes separated by portions of the mesh pattern, and a supporting block surrounding the mesh structure and holes, and
the cutting operation cuts through the supporting block.

### Claim 7 (depends on 6)

The method of claim 6, wherein:
prior to the cutting, a width between opposite inner side surfaces of the supporting block is shorter than a width of the opening.

### Claim 8 (depends on 1)

The method of claim 1, further comprising:
prior to removing the handling structure, moving the pellicle film and supporting structure by handling the handling structure.

### Claim 9 (depends on 1)

The method of claim 1, wherein the pellicle film has a thickness of about 30 nm to about 100 nm.

### Claim 10 (depends on 1)

The method of claim 1, wherein the pellicle film comprises silicon.

### Claim 11 (depends on 1)

The pellicle of claim 1, wherein the supporting structure has a thickness of about 1 μm to about 50 μm.

### Claim 12 (depends on 1)

The method of claim 1, wherein the semiconductor substrate is a wafer, and further comprising:
after performing the photolithography process, cutting the wafer to form a plurality of semiconductor chips.

### Claim 13

A photolithography method comprising:
providing a semiconductor substrate;
providing a mask above the semiconductor substrate;
providing a pellicle film having a plate shape that includes a first surface and a second surface opposite the first surface;
forming an upper supporting structure on the first surface of the pellicle film, the upper supporting structure having a mesh pattern;
forming a lower supporting structure on the second surface of the pellicle film;
forming an opening in the lower supporting structure to form a lower supporting block; and
transmitting ultraviolet through the mask and through the pellicle film to form patterns on the semiconductor substrate.

### Claim 14 (depends on 13)

The photolithography method of claim 13, further comprising:
moving the pellicle film and upper supporting structure by handling the lower supporting block; and
after the moving, removing the lower supporting block from the pellicle film by performing a cutting operation.

### Claim 15 (depends on 13)

The photolithography method of claim 13, wherein the mesh pattern has a honeycomb or square pattern.

### Claim 16

A method of manufacturing a semiconductor device, the method including:
providing a semiconductor substrate;
providing a mask above the semiconductor substrate;
forming a film structure, the film structure including:
a pellicle film having a plate shape that includes a first surface and a second surface opposite the first surface,
a supporting structure on the first surface of the pellicle film, the supporting structure having a pattern that includes an array of holes, and
a handling substrate on the second surface of the pellicle film, the handling substrate having an opening therethrough; and
transmitting ultraviolet light through the mask and through the pellicle film to form patterns on the semiconductor substrate.

### Claim 17 (depends on 16)

The method of claim 16, wherein the supporting structure includes a mesh pattern.

### Claim 18 (depends on 16)

The method of claim 16, further comprising:
removing the handling substrate from the pellicle film by using a cutting process.

### Claim 19 (depends on 16)

The method of claim 16, wherein:
the pellicle film has a thickness of about 30 nm to about 100 nm, and
the supporting structure has a thickness of about 1 μm to about 50 μm.