# US 9,519,195 B2 · Manufacturing method of display device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 9,519,195 B2 - Document ID: US9519195B2 - Status: Granted - Kind: B2 - Application number: 14/820,327 - Filed: 2015-08-06 - Published: 2016-07-28 - Granted: 2016-12-13 - Earliest claimed: 2015-01-22 - Assignees: Samsung Display Co., Ltd. - Applicants: Samsung Display Co., Ltd. - Inventors: Younggu Kim; Kyungho Park; Suji Park; Yeongrong Park; Baekkyun Jeon; Minsik Jung; Jaeweon Hur - Web page: https://patentgrep.com/patent/US9519195B2 ## CPC - G02F 1/13439: {characterised by their electrical, optical, physical properties; materials therefor; method of making} - G02F 1/1333: Constructional arrangements; {Manufacturing methods}(G02F1/135, G02F1/136 take precedence) - G02F 1/133516: {Methods for their manufacture, e.g. printing, electro-deposition or photolithography} - G02F 1/133788: {by light irradiation, e.g. linearly polarised light photo-polymerisation} - G02F 1/1339: Gaskets; Spacers; Sealing of cells - G02F 1/136: Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit (G02F1/135 takes precedence) - H10D 86/0214: {using temporary substrates} - H10D 86/423: {comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO} - H10D 86/60: wherein the TFTs are in active matrices - H10F 39/018: {of hybrid image sensors} - H10F 39/809: {of hybrid image sensors} - G02F 1/133354: {Arrangements for aligning or assembling substrates} - G02F 1/133357: {Planarisation layers} - G02F 1/1341: Filling or closing of cells - G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION ## Abstract A method of manufacturing a display device including a thin substrate disposed with a rear electrode that is capable of preventing defects caused by static electricity, the method comprising adhering a first auxiliary substrate on an outer surface of a first substrate; forming a rear electrode on an outer surface of a second substrate, the second substrate being disposed opposed to the first substrate; adhering a second auxiliary substrate on the rear electrode; disposing a liquid crystal layer between an inner surface of the first substrate and an inner surface of the second substrate and adhering the first substrate and the second substrate together; and removing the first auxiliary substrate and the second auxiliary substrate from the first substrate and the second substrate, respectively. ## Claims ### Claim 1 A method of manufacturing a display device, comprising: adhering a first auxiliary substrate on an outer surface of a first substrate; forming a rear electrode on an outer surface of a second substrate, the second substrate being disposed to oppose the first substrate; adhering a second auxiliary substrate on the rear electrode; disposing a liquid crystal layer between an inner surface of the first substrate and an inner surface of the second substrate; adhering the first substrate and the second substrate together; and removing the first auxiliary substrate and the second auxiliary substrate from the first substrate and the second substrate, respectively, the removal of the first auxiliary substrate and the second auxiliary substrate comprising applying a shear force on an end portion of each of the first auxiliary substrate and the second auxiliary substrate to remove them from the first substrate and the second substrate, respectively. ### Claim 2 (depends on 1) The method of claim 1, the first substrate and the second substrate each having a thickness in a range of about 0.05 millimeters (mm) to about 0.1 mm. ### Claim 3 (depends on 1) The method of claim 1, the first auxiliary substrate and the second auxiliary substrate each having a thickness in a range of about 0.4 mm to about 0.7 mm. ### Claim 4 (depends on 1) The method of claim 1, the adhering of the first auxiliary substrate comprising bringing the first auxiliary substrate into contact with an outer surface of the first substrate and adhering them under an atmospheric pressure or in a vacuum state. ### Claim 5 (depends on 1) The method of claim 1, the forming of the rear electrode comprising depositing indium tin oxide (ITO) or indium zinc oxide (IZO) on the outer surface of the second substrate. ### Claim 6 (depends on 1) The method of claim 1, the adhering of the second auxiliary substrate comprising bringing the second auxiliary substrate into contact with the rear electrode and adhering them, under an atmospheric pressure or in a vacuum state. ### Claim 7 (depends on 1) The method of claim 1, further comprising, subsequent to the adhering of the first auxiliary substrate on the outer surface of the first substrate, forming a thin film transistor (TFT) array on the inner surface of the first substrate, the TFT array comprising: a gate line, a data line intersecting the gate line, a TFT connected to the gate line and the data line, the TFT including an oxide semiconductor selected from a group consisting of zinc oxide, indium gallium-zinc oxide and indium-zinc-tin oxide, a pixel electrode connected to the TFT, the pixel electrode including a plurality of branch electrodes, and a common electrode disposed to be insulated from the pixel electrode. ### Claim 8 (depends on 7) The method of claim 7, further comprising, subsequent to the formation of the TFT array on the inner surface of the first substrate, forming a first alignment layer on the TFT array. ### Claim 9 (depends on 8) The method of claim 8, the first alignment layer comprising a photo-sensitive polymer material. ### Claim 10 (depends on 8) The method of claim 8, further comprising, subsequent to the formation of the first alignment layer on the TFT array, performing photoalignment of the first alignment layer. ### Claim 11 (depends on 10) The method of claim 10, the performing of the photoalignment comprising irradating ultraviolet (UV) light onto the first alignment layer, the UV light polarized in a predetermined direction. ### Claim 12 (depends on 7) The method of claim 7, the TFT array further comprising an organic layer interposed between the TFT and the pixel electrode, the organic layer being perforated by a contact hole, the pixel electrode being connected to the TFT via the contact hole. ### Claim 13 (depends on 1) The method of claim 1, further comprising, subsequent to the adhering of the second auxiliary substrate on the rear electrode, forming a color filter array on the inner surface of the second substrate, the color filter array comprising: light shielding units having a lattice form, a color filter between the light shielding units, and a planarization layer configured to cover the light shielding unit and the color filter. ### Claim 14 (depends on 13) The method of claim 13, further comprising, subsequent to the formation of the color filter array on the inner surface of the second substrate, forming a second alignment layer on the color filter array. ### Claim 15 (depends on 14) The method of claim 14, the second alignment layer comprising a photo-sensitive polymer material. ### Claim 16 (depends on 14) The method of claim 14, further comprising, subsequent to the formation of the second alignment layer on the color filter array, performing photoalignment of the second alignment layer. ### Claim 17 (depends on 16) The method of claim 16, the performing of the photoalignment comprising irradiating UV light onto the second alignment layer, the UV light polarized in a predetermined direction. ### Claim 18 A method of manufacturing a display device comprising: adhering a first auxiliary substrate on a first substrate; forming a TFT array on an inner surface of the first substrate, the TFT array comprising: a gate line, a data line intersecting the gate line, a TFT connected to the gate line and the data line, the TFT including an oxide semiconductor layer selected from a group consisting of zinc oxide, indium gallium oxide and indium-zinc-tin oxide, an organic layer arranged on the TFT and being perforated by a contact hole, a pixel electrode arranged on the organic layer and connected to the TFT via the contact hole, and a common electrode arranged to be insulated from the pixel electrode; forming a rear electrode on a second substrate; adhering a second auxiliary substrate on the rear electrode so that the rear electrode is positioned between the second substrate and the second auxiliary substrate; disposing a liquid crystal layer between the first substrate and the second substrate; adhering the first substrate and the second substrate together; and removing the first auxiliary substrate and the second auxiliary substrate from the first substrate and the second substrate, respectively, by applying a shear force on an end portion of the first auxiliary substrate or the second auxiliary substrate. ### Claim 19 (depends on 18) The method of claim 18, further comprising, forming a first alignment layer on the first substrate and forming a second alignment layer on the second substrate. ### Claim 20 (depends on 19) The method of claim 19, further comprising, performing UV photoalignment of the first alignment layer and performing UV photoalignment of the second alignment layer.