# US 9,519,036 B2 · Magnetic sensor including magnetic layer of closed loop shape

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 9,519,036 B2
- Document ID: US9519036B2
- Status: Granted
- Kind: B2
- Application number: 12/913,433
- Filed: 2010-10-27
- Published: 2011-07-21
- Granted: 2016-12-13
- Earliest claimed: 2010-01-21
- Assignees: The Industry & Academic Cooperation in Chungnam National University (IAC)
- Applicants: CheolGi Kim; Dong Young Kim; Jong-Ryul Jeong; Quang Hung Tran
- Inventors: CheolGi Kim; Dong Young Kim; Jong-Ryul Jeong; Quang Hung Tran
- Web page: https://patentgrep.com/patent/US9519036B2

## CPC

- G01R 33/06: using galvano-magnetic devices
- G01R 33/07: Hall effect devices
- G01R 33/09: Magnetoresistive devices
- G01R: MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES (indicating correct tuning of resonant circuits H03J3/12)

## Abstract

Provided is a magnetic sensor for detecting a magnetic field. The magnetic sensor includes a magnetic layer of a closed loop shape; a pair of current terminals which face each other contacting with the closed loop and through which current is input/output; and a pair of voltage terminals which face each other contacting with the closed loop and from which output voltage is detected. Both an anisotropic magnetoresistance effect (AME) and a planar Hall effect (PHE) contribute to the output voltage and a hysteresis of the output voltage is eliminated by exchange coupling of a ferromagnetic layer by a ferromagnetic-antiferromagnetic layer structure and a ferromagnetic-metal-antiferromagnetic layer structure. Accordingly, it is possible to minimize a hysteresis due to a demagnetization factor of the closed loop, stabilize the output voltage of the magnetic sensor and enhance sensitivity.

## Claims

### Claim 1

A magnetic sensor, comprising:
a first magnetic layer in a shape of a closed loop;
a pair of current terminals which face each other contacting with the first magnetic layer and through which current is input and output;
a pair of voltage terminals which face each other contacting with the first magnetic layer and from which output voltage is detected; and
a second magnetic layer disposed inside the closed loop, wherein the second magnetic layer is made of a same material as the first magnetic layer, wherein the second magnetic layer is separated from the first magnetic layer, the current terminals, and the voltage terminals, and wherein the second magnetic layer is concentric with the first magnetic layer and is spaced by a predetermined distance from the first magnetic layer.

### Claim 2 (depends on 1)

The magnetic sensor of claim 1, wherein the output voltage from the pair of voltage terminals has a characteristic of anisotropic magnetoresistance effect (AME) and planar Hall effect (PHE) of the first magnetic layer.

### Claim 3 (depends on 2)

The magnetic sensor of claim 2, wherein the closed loop is a circular closed loop, an oval closed loop or a polygonal closed loop.

### Claim 4 (depends on 2)

The magnetic sensor of claim 2, wherein the closed loop is a circular closed loop.

### Claim 5 (depends on 4)

The magnetic sensor of claim 4, wherein the loop has an inner, median, and outer radius, and wherein a ratio between the median radius and a difference between the outer radius and the inner radius is 0.5 or larger.

### Claim 6 (depends on 1)

The magnetic sensor of claim 1, wherein a terminal selected from the pair of current terminals and a terminal selected from the pair of voltage terminals have a 90° angle therebetween.

### Claim 7 (depends on 1)

The magnetic sensor of claim 1, wherein the input current is direct current (DC), alternating current (AC) or a pulse.

### Claim 8 (depends on 2)

The magnetic sensor of claim 2, wherein the first magnetic layer includes a ferromagnetic film.

### Claim 9 (depends on 8)

The magnetic sensor of claim 8, wherein the first magnetic layer further includes one or more films selected from the group consisting of an antiferromagnetic film, an insulator film and a non-magnetic metal film.

### Claim 10 (depends on 1)

The magnetic sensor of claim 1, wherein the first magnetic layer is selected from the group consisting of:
a film including a ferromagnetic film and an antiferromagnetic film;
a film including a ferromagnetic film, a metal film and an antiferromagnetic film;
a film including a ferromagnetic film (I), an insulator film and an antiferromagnetic film (II); and
a film including a ferromagnetic film (I), a metal film, a ferromagnetic film (II) and antiferromagnetic film.

### Claim 11 (depends on 1)

The magnetic sensor of claim 1, further comprising a third magnetic layer that is made of the same material as the first magnetic layer and is separated by a predetermined distance from the first magnetic layer, each of the current terminals and each of the voltage terminals.

### Claim 12

A magnetic sensor comprising:
a first magnetic layer in a shape of a closed loop;
a pair of current terminals which face each other contacting with the first magnetic layer and through which current is input or output;
a pair of voltage terminals which face each other contacting with the first magnetic layer and from which output voltage is detected; and
a second magnetic layer disposed outside the closed loop, wherein the second magnetic layer is made of a same material as the first magnetic layer, wherein the second magnetic layer is separated from the first magnetic layer, the current terminals, and the voltage terminals, and wherein the second magnetic layer is spaced by a predetermined distance from the first magnetic layer.

### Claim 13 (depends on 1)

The magnetic sensor of claim 1, wherein the second magnetic layer has a solid circular shape.
