# US 9,518,868 B2 · Infrared detector with metal-black coating having dielectric overlayer and related methods

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- Number: US 9,518,868 B2
- Document ID: US9518868B2
- Status: Granted
- Kind: B2
- Application number: 14/308,879
- Filed: 2014-06-19
- Published: 2014-12-25
- Granted: 2016-12-13
- Earliest claimed: 2013-06-21
- Assignees: Univerity of Central Florida Reseach Foundation, Inc.
- Applicants: University of Central Florida Research Foundation, Inc.
- Inventors: Deep Panjwani
- Web page: https://patentgrep.com/patent/US9518868B2

## CPC

- G01J 5/0853: {having infrared absorbers other than the usual absorber layers deposited on infrared detectors like bolometers, wherein the heat propagation between the absorber and the detecting element occurs within a solid}
- G01J 5/046: {Materials; Selection of thermal materials}
- G01J: MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY (light sources F21, H01J, H01K, H05B; investigating properties of materials by optical means G01N)

## Abstract

An infrared (IR) detector may include a substrate, circuitry carried by the substrate, and a metal-black layer over the thermometric element. The circuitry may include a thermometric element with a measurable thermometric property. The IR detector may include a dielectric layer covering the metal-black layer, and the circuitry provides a value for IR radiation absorbed by the metal-black layer.

## Claims

### Claim 1

An infrared (IR) detector comprising:
a substrate;
circuitry carried by said substrate;
said circuitry comprising a thermometric element with a measurable thermometric property;
a gold-black layer over said thermometric element; and
a dielectric layer covering said gold-black layer;
said circuitry providing a value for IR radiation absorbed by said gold-black layer.

### Claim 2 (depends on 1)

The IR detector of claim 1 wherein said dielectric layer comprises a silicon dioxide layer.

### Claim 3 (depends on 1)

The IR detector of claim 1 wherein said dielectric layer and said gold-black layer form a continuous interface.

### Claim 4 (depends on 1)

The IR detector of claim 1 wherein said dielectric layer comprises an evaporated dielectric layer.

### Claim 5 (depends on 1)

The IR detector of claim 1 wherein said substrate comprises silicon material.

### Claim 6 (depends on 1)

The IR detector of claim 1 wherein said dielectric layer has a thickness between 50 nm and 550 nm.

### Claim 7

A method for making an infrared (IR) detector comprising:
forming a photoresist pattern layer on a substrate;
forming a metal-black layer over the substrate and the photoresist pattern layer, the metal-black layer to be coupled to circuitry on the substrate;
forming a dielectric layer covering the metal-black layer; and
removing the photoresist pattern layer together with a portion of the metal-black layer residing on top of it without removing a remainder of the metal-black layer.

### Claim 8 (depends on 7)

The method of claim 7 wherein the metal-black layer comprises a gold-black layer.

### Claim 9 (depends on 7)

The method of claim 7 wherein the forming of the dielectric layer comprises an electron beam evaporation of a dielectric material.

### Claim 10 (depends on 7)

The method of claim 7 wherein the dielectric layer comprises a silicon dioxide layer.

### Claim 11 (depends on 7)

The method of claim 7 wherein the forming of the dielectric layer on the metal-black layer includes defining a continuous interface.

### Claim 12 (depends on 7)

The method of claim 7 wherein the substrate comprises silicon material.

### Claim 13 (depends on 7)

The method of claim 7 wherein the dielectric layer has a thickness between 50 nm and 550 nm.

### Claim 14

A method for making an infrared (IR) detector comprising:
forming a photoresist pattern layer on a substrate;
forming a gold-black layer over the photoresist pattern layer and the substrate, the gold-black layer to be coupled to circuitry on the substrate;
forming a silicon dioxide layer covering the gold-black layer; and
removing the photoresist pattern layer together with the gold-black layer residing on top of it without removing a remainder of the gold-black layer.

### Claim 15 (depends on 14)

The method of claim 14 wherein the forming of the silicon dioxide layer comprises an electron beam evaporation of a silicon dioxide material.

### Claim 16 (depends on 14)

The method of claim 14 wherein the forming of the silicon dioxide layer on the gold-black layer includes defining a continuous interface.