# US 9,518,338 B2 · Single crystal diamond

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- Number: US 9,518,338 B2
- Document ID: US9518338B2
- Status: Granted
- Kind: B2
- Application number: 11/743,680
- Filed: 2007-05-03
- Published: 2008-04-10
- Granted: 2016-12-13
- Earliest claimed: 2002-09-20
- Assignees: Element Six Technologies Limited
- Applicants: Geoffrey Alan Scarsbrook; Philip Maurice Martineau; Daniel James Twitchen
- Inventors: Geoffrey Alan Scarsbrook; Philip Maurice Martineau; Daniel James Twitchen
- Web page: https://patentgrep.com/patent/US9518338B2

## CPC

- C30B 29/04: Diamond
- C30B 25/02: Epitaxial-layer growth
- C30B 25/20: the substrate being of the same materials as the epitaxial layer
- C30B 33/00: After-treatment of single crystals or homogeneous polycrystalline material with defined structure (C30B31/00 takes precedence)
- C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR

## Abstract

A method of producing a large area plate of single crystal diamond from CVD diamond grown on a substrate substantially free of surface defects by chemical vapor deposition (CVD). The homoepitaxial CVD grown diamond and the substrate are severed transverse to the surface of the substrate on which diamond growth took place to produce the large area plate of single crystal CVD diamond.

## Claims

### Claim 1

A method of producing a plate of single crystal diamond, which comprises providing a diamond substrate, growing diamond homoepitaxially on a surface of the substrate by chemical vapour deposition (CVD) and severing the homoepitaxial CVD grown diamond transverse to the surface of the substrate on which diamond growth took place to produce a plate of single crystal CVD diamond having side faces and major faces, the major faces being larger in area than the side surfaces, wherein the major faces are transverse to the surface of the substrate.

### Claim 2 (depends on 1)

The method according to claim 1, wherein the homoepitaxial CVD grown diamond is severed normal to the surface of the substrate.

### Claim 3 (depends on 1)

The method according to claim 1, wherein the growth thickness of the homoepitaxial CVD grown diamond is greater than about 10 mm.

### Claim 4 (depends on 3)

The method according to claim 3, wherein the growth thickness of the homoepitaxial CVD grown diamond is greater than about 12 mm.

### Claim 5 (depends on 4)

The method according to claim 4, wherein the growth thickness of the homoepitaxial CVD grown diamond is greater than about 15 mm.

### Claim 6 (depends on 1)

The method according to claim 1, wherein the single crystal CVD diamond plate has at least one linear dimension exceeding 10 mm.

### Claim 7 (depends on 1)

The method according to claim 1, wherein the diamond substrate is a plate of single crystal CVD diamond produced by the method according to claim 1.

### Claim 8 (depends on 1)

The method according to claim 1, wherein any original substrate remaining in the single crystal CVD diamond plate is removed.

### Claim 9 (depends on 1)

The method according to claim 1, wherein the single crystal CVD diamond plate has a rectangular, square, or parallelogram shape having major surfaces that are transverse to the surface of the substrate.

### Claim 10 (depends on 1, 2)

The method according to any one of claim 1 or 2, wherein in the step of severing the homoepitaxial CVD grown diamond the substrate is also severed.

### Claim 11 (depends on 1)

The method according to claim 1, wherein the diamond substrate has a surface on which the homoepitaxial CVD diamond is grown that is substantially free of surface defects.