# US 9,518,321 B2 · Atomic layer deposition processing apparatus to reduce heat energy conduction

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- Number: US 9,518,321 B2
- Document ID: US9518321B2
- Status: Granted
- Kind: B2
- Application number: 14/483,619
- Filed: 2014-09-11
- Published: 2016-02-04
- Granted: 2016-12-13
- Earliest claimed: 2014-07-31
- Assignees: Hitachi Kokusai Electric Inc.
- Applicants: Hitachi Kokusai Electric Inc.
- Inventors: Mitsuro Tanabe; Yoshihiko Yanagisawa; Kazuhiro Yuasa; Masanori Sakai; Yasutoshi Tsubota
- Web page: https://patentgrep.com/patent/US9518321B2

## CPC

- C23C 16/4585: {Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds}
- C23C 16/4411: {Cooling of the reaction chamber walls (C23C16/45572 takes precedence)}
- C23C 16/45525: {Atomic layer deposition [ALD]}
- C23C 16/45582: {Expansion of gas before it reaches the substrate}
- C23C 16/4586: {Elements in the interior of the support, e.g. electrodes, heating or cooling devices}
- C23C 16/46: characterised by the method used for heating the substrate (C23C16/48, C23C16/50 take precedence)
- C23C 16/463: {Cooling of the substrate}
- C23C 16/52: Controlling or regulating the coating process {(C23C16/45557, C23C16/279 take precedence)}
- B05C 9/14: the auxiliary operation involving heating {or cooling}
- B05C 11/1015: {responsive to a conditions of ambient medium or target, e.g. humidity, temperature (B05C11/1005 takes precedence); responsive to position or movement of the coating head relative to the target}
- H05B 1/0233: {for semiconductors manufacturing}
- H10P 72/0602: {Temperature monitoring}
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- B05C: APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL (spraying apparatus, atomising apparatus, nozzles B05B; plant for applying liquids or other fluent materials to objects by electrostatic spraying B05B5/08)
- H05B: ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

Embodiments of the invention relate to apparatuses and methods for depositing materials on substrates during atomic layer deposition processes. In one embodiment, a substrate processing apparatus comprises a chamber lid assembly including a first heating member, a susceptor positioned proximal to the chamber lid assembly, wherein the susceptor includes a second heating member for heating the substrate, a process chamber accommodating at least the chamber lid assembly and the susceptor and a controller configured to control the first heating member so as to refrain the conduction of heat energy generated by the second heating member from the susceptor to the chamber lid assembly.

## Claims

### Claim 1

An atomic layer deposition processing apparatus comprising:
a chamber lid assembly including:
a gas dispersing channel, connected to a first gas delivery system and a second gas delivery system, the gas dispersing channel extending along a central vertical axis and having an upper portion and a lower portion, the upper portion having a cylindrical shape along the central vertical axis and the lower portion having a conical shape tapering away from the central vertical axis and extending along a horizontal axis;
a first heater element and a first temperature sensor, integral to a bottom wall of the chamber lid assembly that is located above the lower portion of the gas dispersing channel, the first temperature sensor configured to detect a first temperature at a first location at a first side relative to the central vertical axis and configured to output first temperature information corresponding to the first temperature to a temperature comparator, and
a choke connected to the bottom wall of the chamber lid assembly;
a susceptor spaced a distance from the chamber lid assembly and extending along the horizontal axis, the susceptor including a substrate receiving surface, a second heater configured to heat a surface adjacent the substrate receiving surface and a second temperature sensor configured to detect a second temperature at a second location at a second side opposing the first side relative to the central vertical axis, and configured to output second temperature information corresponding to the second temperature to the temperature comparator;
a process chamber enclosing at least the chamber lid assembly and the susceptor, the process chamber that is connected to the bottom wall of the chamber lid assembly by one or more thermal attenuation parts, wherein the thermal attenuation parts attenuate heat energy generated by the first heater;
the temperature comparator configured to:
compare the first temperature information with the second temperature information; and
determine a temperature difference between the first temperature and the second temperature; and
a controller configured to:
control the first gas delivery system and the second gas delivery system to supply gases to the substrate alternately; and
control the first heater or the second heater so that the temperature difference between the first temperature at the first location and the second temperature at the second location is decreased,
wherein an outside edge of the cover is arranged further outward in a horizontal direction from the central vertical axis than a corresponding outside edge of the substrate on the susceptor, and
wherein an outside edge of an element of the first heater embedded in the cover is arranged further outward in a horizontal direction from the central vertical axis than a corresponding outside edge of the substrate on the susceptor.

### Claim 2 (depends on 1)

The atomic layer deposition processing apparatus of claim 1, wherein the first heater is covered by a cover at least partially made by a material having a higher thermal conductivity than that of chamber lid assembly, the cover being installed facing the substrate receiving surface.

### Claim 3 (depends on 1)

The atomic layer deposition processing apparatus of claim 1, wherein the process chamber has no wall that defines a part of the gas dispersing channel at the position corresponding to the center of a substrate disposed on the substrate receiving surface.

### Claim 4 (depends on 1)

The atomic layer deposition processing apparatus of claim 1, wherein the distance between the susceptor and the chamber lid assembly is between 0.02 inches and 2.0 inches.