# US 9,517,532 B2 · Metal member, metal member surface processing method, semiconductor device, semiconductor device manufacturing method, and composite molded body

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- Number: US 9,517,532 B2
- Document ID: US9517532B2
- Status: Granted
- Kind: B2
- Application number: 14/914,061
- Filed: 2014-11-10
- Published: 2016-07-21
- Granted: 2016-12-13
- Earliest claimed: 2013-12-09
- Assignees: Denso Corporation
- Applicants: Denso Corporation
- Inventors: Wataru Kobayashi; Eiji Hayashi; Kazuki Kouda
- Web page: https://patentgrep.com/patent/US9517532B2

## CPC

- B23K 26/359: by providing a line or line pattern, e.g. a dotted break initiation line
- B23K 26/00: Working by laser beam, e.g. welding, cutting or boring
- B23K 26/0006: {taking account of the properties of the material involved (B23K26/32, B23K26/40 take precedence)}
- B23K 26/0626: {Energy control of the laser beam (B23K26/0622 takes precedence)}
- B23K 26/354: by melting
- B23K 26/355: {Texturing}
- B23K 26/3584: {Increasing rugosity, i.e. roughening}
- H10W 70/04: of leadframes
- H10W 70/417: {Bonding materials between chips and die pads}
- H10W 70/421: {Shapes or dispositions}
- H10W 70/424: {Cross-sectional shapes (H10W70/481 takes precedence)}
- H10W 70/457: {of metallic layers on leadframes}
- H10W 74/111: {the semiconductor body being completely enclosed}
- H10W 74/127: {characterised by arrangements for sealing or adhesion}
- B23K 2101/40: Semiconductor devices
- B23K 2103/08: Non-ferrous metals or alloys
- H10W 72/352: {comprising metals or metalloids, e.g. solders}
- H10W 72/354: {comprising polymers}
- H10W 72/931: {Shapes of bond pads}
- H10W 72/952: {comprising metals or metalloids, e.g. PbSn, Ag or Cu}
- H10W 90/736: {between a chip and a stacked lead frame, conducting package substrate or heat sink}
- B23K: SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

An object is to form a rough surface for ensuring adhesion between a metal member and other members, or a rough surface for suppressing solder expansion in the metal member using an energy beam having energy density lower than a related art. A surface processing method of a metal member, in which a metal thin film is arranged on a surface of a base, includes: melting or evaporating a surface portion of the metal thin film by irradiating the metal thin film with a pulse-oscillated laser beam having energy density of 100 J/cm2 or less and a pulse width of 1 μs or less; and roughening the surface of the metal thin film by solidifying the surface portion of the metal thin film after the melting or evaporating. The metal thin film is made of at least one of Ni, Au, Pd, and Ag as a main component.

## Claims

### Claim 1

A surface processing method of a metal member in which a metal thin film is arranged on a surface of a base made of a conductive metal material, the surface processing method comprising:
forming the metal thin film with a material having at least one of Ni, Au, Pd, and Ag as a main component;
melting or evaporating a surface portion of the metal thin film by irradiating the surface of the metal thin film with a laser beam which is pulse-oscillated, and has energy density of 100 J/cm2 or less and a pulse width equal to or less than 1 μs; and
roughening the surface of the metal thin film by solidifying the surface portion of the metal thin film after the melting or evaporating.

### Claim 2 (depends on 1)

The surface processing method of the metal member according to claim 1, wherein:
the melting or evaporating includes:
arranging a plurality of beam sources of the laser beam along a direction of a plurality of normal lines to the surface of the metal thin film, the normal lines respectively passing through a plurality of different positions on at least one straight line, which is parallel with the surface of the metal thin film; and
irradiating the laser beam on the plurality of different positions on the at least one straight line on the surface of the metal thin film.

### Claim 3 (depends on 2)

The surface processing method of the metal member according to claim 2, wherein:
the melting or evaporating further includes:
moving the beam sources of the laser beam along the straight line; and
sequentially irradiating the laser beam on the plurality of different positions on the straight line.

### Claim 4 (depends on 2)

The surface processing method of a metal member according to claim 2, wherein:
the at least one straight line includes a plurality of straight lines; and
the melting or evaporating further includes:
forming a groove by irradiating the laser beam so as to contact with an irradiation range, which is formed along each straight line.

### Claim 5 (depends on 2)

The surface processing method of the metal member according to claim 2, wherein:
the at least one straight line includes a plurality of straight lines; and
the plurality of straight lines are parallel with each other.

### Claim 6 (depends on 1)

A manufacturing method of a semiconductor device, which includes a lead frame, an IC chip, and a molded resin, wherein: the lead frame has the base, and the metal thin film formed on a surface of the base; the IC chip is mounted on the surface of the metal thin film; the molded resin is formed so as to cover the IC chip and so as to contact with the surface of the metal thin film, the manufacturing method of the semiconductor device comprising:
roughening a portion of the surface of the metal thin film, which contacts with the molded resin, by the surface processing method of the metal member according to claim 1.

### Claim 7

A semiconductor device comprising:
a lead frame which includes a base made of a conductive metal material, and a metal thin film arranged on a surface of the base;
an IC chip which is mounted on a surface of the metal thin film; and
a molded resin which covers the IC chip and contacts with the surface of the metal thin film, wherein:
the metal thin film is made of a material which has at least one of Ni, Au, Pd, and Ag as a main component;
a groove having a width in a range between 5 μm and 300 μm and extending along a straight line parallel with the surface of the base is arranged at a surface portion of the surface of the metal thin film, which contacts with the molded resin;
a plurality of convex portions are arranged around the groove at the surface portion of the metal thin film; and
a fine unevenness is arranged to have a size, in which an average height of the convex portions is in a range between 1 nm and 500 nm, an average width of the convex portions is in a range between 1 nm and 300 nm, and an average distance between the convex portions is in a range between 1 nm and 300 nm.

### Claim 8 (depends on 7)

The semiconductor device according to claim 7, wherein:
the fine unevenness is made of oxide obtained by oxidizing the material of the metal thin film, or is made of an alloy of the material of the metal thin film and a material of the base.

### Claim 9

A semiconductor device comprising:
a lead frame which includes a base made of a conductive metal material, and a metal thin film arranged on a surface of the base;
an IC chip which is mounted on a surface of the metal thin film; and
a molded resin which covers the IC chip and contacts with the surface of the metal thin film, wherein:
the metal thin film is made of a material which has at least one of Ni, Au, Pd, and Ag as a main component;
a groove having a width in a range between 5 μm and 300 μm and extending along a straight line parallel with the surface of the base is arranged at a surface portion of the surface of the metal thin film, which contacts with the molded resin;
a plurality of convex portions are arranged in the groove at the surface portion of the metal thin film; and
a fine unevenness is arranged to have a size, in which an average height of the convex portions is in a range between 1 nm and 500 nm, an average width of the convex portions is in a range between 1 nm and 300 nm, and an average distance between the convex portions is in a range between 1 nm and 300 nm.

### Claim 10

A composite molded body comprising:
a metal member which includes a base made of a conductive metal material, and a metal thin film arranged on a surface of the base; and
an electronic component which is bonded to a surface of the metal thin film through a solder, wherein:
the metal thin film is made of a material which has at least one of Ni, Au, Pd, and Ag as a main component;
a laser irradiation groove having a width in a range between 5 μm and 300 μm is arranged at least at a portion of the surface of the metal thin film, which is disposed around a region in which the solder is disposed;
a plurality of convex portions are arranged around the groove; and
a fine unevenness is arranged to have a size, in which an average height of the convex portions is in a range between 1 nm and 500 nm, an average width of the convex portions is in a range between 1 nm and 300 nm, and an average distance between the convex portions is in a range between 1 nm and 300 nm.

### Claim 11 (depends on 10)

The composite molded body according to claim 10, wherein:
the groove and the fine unevenness are arranged along an entire circumference of a surrounding of a region of the surface of the metal thin film, in which the solder is disposed.

### Claim 12

A semiconductor device comprising:
a lead frame which includes a base made of a conductive metal material, and a metal thin film arranged on a surface of the base;
an IC chip which is bonded to a surfaced of the metal thin film through a solder; and
a molded resin which covers the IC chip and contacts with the surface of the metal thin film, wherein:
the metal thin film is made of a material which has at least one of Ni, Au, Pd, and Ag as a main component;
a laser irradiation groove having a width in a range between 5 μm and 300 μm is arranged at a portion of the surface of the metal thin film, which contacts with the molded resin, and is arranged at least at a portion of the surface of the metal thin film, which is disposed around a region in which the solder is disposed;
a plurality of convex portions are arranged around the groove; and
a fine unevenness is arranged to have a size in which an average height of the plurality of convex portions is in a range between 1 nm and 500 nm, an average width of the convex portions is in a range between 1 nm and 300 nm, and an average distance between the convex portions is in a range between 1 nm and 300 nm.

### Claim 13 (depends on 12)

The semiconductor device according to claim 12, wherein:
the groove and the fine unevenness are arranged along an entire circumference of a surrounding of a region of the surface of the metal thin film, in which the solder is disposed.