Multimode RF amplifier system
AssigneeQorvo US, Inc.
InventorsAlexander Wayne Hietala, Jeffery Peter Ortiz, David Halchin, Jackie Johnson, Wendel Charles
Life of this patent
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Abstract
Multimode radio frequency (RF) amplifier systems and techniques are disclosed. In one embodiment, a multimode radio frequency (RF) amplifier system has a first RF amplifier and a second RF amplifier. The first RF amplifier may support a first RF communication standard. The second RF amplifier may support a second RF communication standard. The first RF amplifier includes an auxiliary circuit. The auxiliary circuit may provide a service or a utility to a second RF amplifier. For example, the auxiliary circuit may generate a supply voltage to power the second RF amplifier.
Claims33
A multimode radio frequency (RF) amplifier system comprising:
- a first semiconductor die;
- a first RF amplifier formed on the first semiconductor die and including an auxiliary circuit formed on the same first semiconductor die as the first RF amplifier, wherein the first RF amplifier is configured to:
- receive a first modulated RF input signal;
- generate a first modulated RF output signal based on the first modulated RF input signal;
- and
- provide the first modulated RF output signal for transmission;
- and
- a second RF amplifier coupled to the auxiliary circuit, wherein the second RF amplifier is configured to receive a second RF input signal and generate a second RF output signal based on the second RF input signal, wherein:
- operation of the first RF amplifier and the auxiliary circuit are mutually exclusive such that:
- when the first RF amplifier is ON, the auxiliary circuit is OFF, and
- when the auxiliary circuit is ON, the first RF amplifier is OFF;
- the second RF amplifier is electromagnetically isolated from the first RF amplifier;
- and
- the auxiliary circuit is configured to provide a utility to the second RF amplifier.
A radio frequency (RF) amplification device comprising:
- a semiconductor die;
- an RF power converter formed on the semiconductor die, wherein the RF power converter is configured to generate a regulated supply voltage from a power source voltage and a modulated supply voltage from the power source voltage;
- a first RF amplification circuit formed on the semiconductor die, wherein the first RF amplification circuit is configured to amplify a first RF signal using the regulated supply voltage from the RF power converter;
- and
- a second RF amplification circuit electromagnetically isolated from the RF power converter, wherein the second RF amplification circuit is configured to amplify a second RF signal using the modulated supply voltage from the RF power converter,
- wherein operation of the first amplification circuit and the RF power converter are mutually exclusive such that:
- when the first RF amplification circuit is ON, the RF power converter is OFF, and
- when the RF power converter is ON, the first RF amplification circuit is OFF.
Dependencies are inferred from the claim text.