Selective atomic layer deposition process utilizing patterned self assembled monolayers for 3D structure semiconductor applications

A method of forming a fin structure with different materials on different sidewalls on a substrate comprising:

• performing a directional plasma process to form a patterned self-assembled layer including a treated layer formed on a first sidewall of a structure and a self-assembled layer formed on a second sidewall of the structure formed on the substrate;
• and
• selectively depositing a material layer predominantly on the self-assembled layer.

A method for forming a fin structure with different materials formed on different locations of the fin structure comprising:

• performing an atomic layer deposition process to form a material layer on a substrate having a patterned self-assembled layer formed on a fin structure, wherein material layer is selectively formed a designated location of the fin structure where the patterned self-assembly defines to grow.