Flowable carbon for semiconductor processing
AssigneeApplied Materials, Inc.
InventorsAbhijit Basu Mallick, Nitin K. Ingle
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Abstract
Methods are described for forming flowable carbon layers on a semiconductor substrate. A local excitation (such as a hot filament in hot wire CVD, a plasma in PECVD or UV light) may be applied as described herein to a silicon-free carbon-containing precursor containing a hydrocarbon to form a flowable carbon-containing film on a substrate. A remote excitation method has also been found to produce flowable carbon-containing films by exciting a stable precursor to produce a radical precursor which is then combined with unexcited silicon-free carbon-containing precursors in the substrate processing region.
Claims20
A method of forming a silicon-free carbon-containing layer on a semiconductor substrate inside a substrate processing region within a chemical vapor deposition chamber, the method comprising:
- flowing a silicon-free carbon-containing precursor to the substrate processing region, wherein the silicon-free carbon-containing precursor comprises a hydrocarbon;
- reacting the silicon-free carbon-containing precursor in the substrate processing region to deposit a flowable silicon-free carbon-containing layer on the substrate, wherein the silicon-free carbon-containing layer is flowable as deposited on a surface of the semiconductor substrate and formed from the reacted silicon-free carbon-containing precursor, and wherein the silicon-free carbon-containing layer comprises C—H bonds.
A method of forming a silicon-free carbon-containing layer on a semiconductor substrate, the method comprising:
- flowing a silicon-free hydrocarbon precursor into a substrate processing region;
- reacting the silicon-free carbon-containing precursor in the substrate processing region to deposit a silicon-free layer on a substrate, wherein the silicon-free carbon-containing layer produced by the reacted silicon-free carbon-containing precursor is flowable as deposited on a surface of the substrate, and wherein the reacting operation comprises a plasma-free reaction comprising a hot wire filament or UV treatment.
Dependencies are inferred from the claim text.