MEMS device with a capping substrate
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChun-Wen Cheng, Chia-Hua Chu
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Abstract
A method for forming an integrated circuit device includes forming a dielectric layer onto a first substrate, forming a sacrificial material into a sacrificial cavity formed into the dielectric layer, forming a membrane layer over the dielectric layer and sacrificial material, releasing the sacrificial material through at least one via formed through the membrane layer, and bonding a capping substrate to the membrane layer such that a second cavity is formed, the second cavity being connected to the sacrificial cavity though a via formed into the membrane layer.
Claims20
A method for forming an integrated circuit device, the method comprising:
- forming a dielectric layer onto a first substrate;
- forming a sacrificial material into a sacrificial cavity formed into the dielectric layer;
- forming a membrane layer over the dielectric layer and sacrificial material;
- releasing the sacrificial material through at least one via formed through the membrane layer;
- and
- bonding a capping substrate to the membrane layer such that a second cavity is formed, the second cavity being connected to the sacrificial cavity though a via formed into the membrane layer.
A method for forming an integrated circuit device comprising:
- forming a dielectric layer on a first substrate, the dielectric layer having a sacrificial cavity formed therein;
- forming a membrane layer on the dielectric layer such that the membrane layer is suspended over the sacrificial cavity;
- and
- bonding a capping substrate to the membrane layer such that a second cavity is formed, the second cavity being connected to the sacrificial cavity though a via formed into the membrane layer.
A method for forming an integrated circuit device, the method comprising:
- forming a dielectric layer on a first substrate, the dielectric layer having a sacrificial cavity formed therein, wherein the first substrate includes a thru-silicon via;
- forming a top electrode layer on top of the sacrificial cavity;
- forming a bottom electrode layer on bottom of the sacrificial cavity;
- forming a membrane layer on the dielectric layer;
- bonding a capping substrate to the membrane layer such that a second cavity is formed, the second cavity being connected to the sacrificial cavity though a via formed into the membrane layer;
- and
- connecting a Complementary Metal Oxide Semiconductor (CMOS) substrate to an opposite side of the first substrate from the dielectric layer through a eutectic bond, the CMOS substrate being electrically connected to the first substrate through the thru-silicon via.
Dependencies are inferred from the claim text.