Method for protecting copper wire bonds on aluminum pads of a semiconductor device from corrosion
AssigneeFreescale Semiconductor, Inc.
InventorLeo M. Higgins, III
Life of this patent
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Abstract
A semiconductor device and method for encapsulating the semiconductor device are provided. The method includes: forming a plurality of wire bonds on a surface of the semiconductor device by bonding each of a plurality of copper wires onto corresponding ones of a plurality of aluminum pads; applying a protective material around the plurality of wire bonds, the protective material having a first pH; and encapsulating at least a portion of the semiconductor device and the protective material with an encapsulating material having a second pH, wherein the first pH of the protective material is for neutralizing the second pH of the encapsulating material around the plurality of wire bonds.
Claims20
A method for encapsulating a semiconductor device, the method comprising:
- forming a plurality of wire bonds on a surface of the semiconductor device by bonding each of a plurality of copper wires onto corresponding ones of a plurality of aluminum pads;
- covering the plurality of wire bonds with a protective material having a first pH;
- and
- depositing encapsulating material over the semiconductor device and the protective material, the encapsulating material having a second pH,
- wherein the first pH of the protective material is for neutralizing the second pH of the encapsulating material.
A method for encapsulating a semiconductor device, the method comprising:
- forming a plurality of wire bonds on a surface of the semiconductor device by bonding each of a plurality of copper wires onto corresponding ones of a plurality of aluminum pads;
- applying a protective material to cover an interface region between each of the plurality of aluminum pads and the plurality of wire bonds, the protective material comprising a suspension comprising a liquid polymer having a filler material for producing a first pH of greater than about 7.0;
- and
- encapsulating at least a portion of the semiconductor device and exposed portions of the protective material with an encapsulating material having a second pH of less than about 7.0,
- wherein the first pH of the protective material is for neutralizing the second pH of the encapsulating material around the interface region between each of the plurality of aluminum pads and the plurality of wire bonds.
A method of making a semiconductor device comprising:
- forming a plurality of aluminum bond pads on a surface of the semiconductor device;
- forming a plurality of copper wire bonds, a copper wire bond of the plurality of copper wire bonds formed on each of the plurality of aluminum pads;
- applying a protective material on the plurality of copper wire bonds at an interface with the aluminum bond pads, the protective material having a first pH;
- and
- depositing encapsulating material over at least a portion of the semiconductor device and over the protective material, the encapsulating material having a second pH,
- wherein the first pH of the protective material is for neutralizing the second pH of the encapsulating material around the plurality of wire bonds.
Dependencies are inferred from the claim text.