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US 9,502,365 B2Granted
Opening in a multilayer polymeric dielectric layer without delamination
AssigneeTexas Instruments Incorporated
InventorsLicheng Marshal Han, Michael Andrew Serafin, Byron Williams, Sandra Rodriguez Varela, Salvatore Pavone
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Abstract
An integrated circuit and method with a delamination free opening formed through multiple levels of polymer dielectric. The opening has a vertical sidewall and no interface between adjacent levels of polymer dielectric is exposed on the vertical sidewall.
Claims17
A process of forming an integrated circuit, comprising the steps:
- coating the integrated circuit with a first layer of a photosensitive polymer dielectric;
- exposing a first opening in the first layer using a first opening photo mask;
- developing the first layer to form the first opening with a first layer edge;
- curing the first layer;
- coating the integrated circuit with an overlying layer of a photosensitive polymer dielectric;
- exposing an IC opening in the overlying layer of photosensitive polymer layer using an IC opening photomask;
- developing the overlying layer of photosensitive polymer to form an IC opening;
- curing the overlying layer;
- coating the integrated circuit with a second layer of a photosensitive polymer dielectric;
- exposing a second opening in the second layer of photosensitive polymer layer using a second opening photomask;
- developing the second layer of photosensitive polymer to form the second opening;
- wherein the IC opening and the first opening are concentric;
- wherein the IC opening is smaller than the first opening;
- and
- wherein the overlying layer covers the first layer edge.
12 more elements
A process of forming an integrated circuit, comprising the steps:
- coating the integrated circuit with a first layer of a photosensitive polymer dielectric;
- forming a first opening with a first layer edge in the first layer;
- curing the first layer;
- coating the integrated circuit with a second layer of a photosensitive polymer dielectric wherein the second layer overlies the first layer;
- forming a second opening with a second layer edge in the second layer;
- curing the second layer;
- coating the integrated circuit with an overlying layer of a photosensitive polymer dielectric, wherein the overlying layer overlies both the first layer and the second layer;
- forming an IC opening in the overlying layer;
- and
- curing the overlying layer;
- wherein the IC opening and the first opening are concentric;
- wherein the IC opening is smaller than the first opening and the second opening;
- wherein the second layer is stair stepped away from the first layer edge;
- and
- wherein the overlying layer completely covers the first layer edge and the second layer edge.
12 more elements
A process of forming an integrated circuit, comprising the steps:
- coating the integrated circuit with a first layer of a photosensitive polymer dielectric;
- forming a first opening with a first layer edge in the first layer;
- curing the first layer;
- coating the integrated circuit with an overlying layer of a photosensitive polymer dielectric;
- forming an IC opening in the overlying layer;
- curing the overlying layer;
- coating the integrated circuit with a second layer of a photosensitive polymer dielectric wherein the second layer overlies the first layer;
- forming a second opening with a second layer edge in the second layer, wherein the second opening is larger than the IC opening and wherein the second opening is smaller than the first opening and wherein the second opening and the first opening are concentric;
- and
- curing the second layer;
- wherein the IC opening and the first opening are concentric;
- wherein the IC opening is smaller than the first opening;
- wherein the second layer covers the first layer edge;
- and
- wherein the overlying layer covers the second layer edge.
12 more elements
Dependencies are inferred from the claim text.