Nitride-enriched oxide-to-oxide 3D wafer bonding

A method, comprising:

• forming a first semiconductor structure;
• forming a second semiconductor structure;
• forming a silicon-nitride layer configured to bond the first semiconductor structure and second semiconductor structure together;
• and
• bonding the first semiconductor structure and second semiconductor structure together;
• wherein forming the first semiconductor structure comprises selectively forming a first dielectric layer on a surface of a first wafer.

A method, comprising:

• forming a first semiconductor structure, comprising:
• selectively forming a first dielectric layer on a surface of a first wafer;
• forming a first interconnect structure within the first dielectric layer;
• and
• forming a first oxide layer on a surface of the first dielectric layer;
• forming a second semiconductor structure, comprising:
• selectively forming a second dielectric layer on a surface of a second wafer;
• forming a second interconnect structure;
• and
• forming a second oxide layer on a surface of the first dielectric layer;
• and
• forming a silicon-nitride layer configured to bond the first semiconductor structure and second semiconductor structure together.