Article and method for implementing electronic devices on a substrate using quantum dot layers

A nanophotonic waveguide comprising three layers, wherein the three layers include a middle layer between an upper cladding layer and a bottom cladding layer, wherein the middle layer includes an effective index of refraction which is higher than the upper and bottom cladding layers and regions vertically and laterally adjacent to the middle layer,

• said three layers are deposited on a substrate which is selected from Si, Ge, Si-on-Insulator, Si-on-sapphire, GaAs, InP, ZnSe, and LiNbO3,
• said middle layer serving as the waveguiding layer where photons are confined in the transverse directions by lower index of refraction regions or photonic crystal structure comprising of 2-dimensional or 3-dimensional lattice photonic band gap structures,
• said middle waveguiding layer is made of semiconductor selected from Si, Ge, SixGe1-x, III-VI and II-VI semiconductors,
• said three layers forming the waveguide are surrounded in the lateral direction by a layer or regions comprised of at least one array of cladded quantum dots,
• wherein each of the cladded quantum dots include a dot core with a dot core energy gap and a diameter in the range of about 3 nm to about 5 nm and a dot cladding having an energy gap higher than the dot core energy gap and a cladding thickness in the range of about 1 nm to about 3 nm,
• wherein the quantum dot layer includes optical parameters that include an effective index of refraction, a coefficient of absorption at a given light wavelength which depends on relative core diameter, a cladding thickness and the materials of quantum dots comprising a middle layer,
• wherein the quantum dot layer optical parameters can be altered by applying an external voltage and its associated electric field,
• wherein the dot core is constructed from a material selected from at least one of Si, Ge, combination of Si and Ge, II-VI and III-V semiconductors,
• wherein the dot cladding is selected from SiOx, GeOx, II-VI and III-V materials,
• the quantum dot layer having on top an electrode material layer for the purpose of applying an external voltage bias and/or signal for modulation,
• the layer or regions of at least one array of cladded quantum dots having on a bottom side an electrode material layer for the purpose of applying an external voltage bias and/or signal for modulation,
• wherein the electrode material layer on the bottom side of the layer or regions of at least one array of cladded quantum dots is configured to apply the external electric field.

A nano-photonic waveguide comprising of three layers, a top cladding layer having a top layer effective index of refraction, a bottom cladding layer having a bottom layer effective index of refraction and a middle layer, wherein the middle layer includes an effective index of refraction that is higher than the top and bottom effective index of refraction and regions adjacent to it vertically as well as laterally,

• said three layers are deposited on a substrate which is selected from Si, Ge, Si-on-Insulator, Si-on-sapphire, GaAs, InP, ZnSe, and LiNbO3
• said middle layer serving as the waveguiding layer where photons are confined in the transverse directions by regions characterized by lower index of refraction or photonic crystal structure comprising of two-dimensional or three-dimensional lattice photonic crystals,
• said middle waveguiding layer is composed of a plurality of cladded quantum dots configured as an array of cladded quantum dots,
• wherein each of the plurality of cladded quantum dots include a core with a core energy gap and with diameter in the range of about 3 nm to about 5 nm and a cladding having an energy gap higher than the core energy gap and a cladding thickness in the range of about 1 nm to about 3 nm,
• wherein the middle layer has optical parameters that include an effective index of refraction, and a coefficient of absorption at a given light wavelength, wherein their magnitude is dependent on relative core diameter, the cladding thickness and the materials of quantum dots comprising the middle layer,
• wherein the optical parameters are alterable by applying an external voltage and an associated electric field,
• wherein the core is constructed from a material selected from at least one of Si, Ge, combination of Si and Ge, II-VI and III-V semiconductors,
• wherein the cladding on cladded quantum dots is constructed from a material selected from at least one of SiOx, GeOx, II-VI and III-V materials,
• wherein the top cladding layers is deposited above the middle layer and is selected from at least one of SiO2, Si3N4, SiON,
• wherein the bottom cladding layer is deposited below the middle layer and is constructed from a material selected from at least one of SiO2, Si3N4, SiON,
• wherein the top and bottom cladding layers include an electrode material layer for the purpose of applying an external voltage bias and/or signal for modulation,
• wherein the top cladding layer is deposited with an electrode layer to apply external voltages,
• wherein the substrate or bottom cladding layer includes a deposited electrode through which to apply the external electric field.