Quinoid compounds and their use in semiconducting matrix materials, electronic and optoelectronic structural elements

An electronic or optoelectronic structural element comprising a dopant for doping an organic semiconductive matrix material, a charge injection layer, a hole blocker layer, an electrode material, a transport material, or a storage material, wherein the dopant for doping an organic semiconductive matrix material, the charge injection layer, the hole blocker layer, the electrode material, the transport material, or the storage material comprises a quinoid compound or derivative thereof, wherein the quinoid compound is selected from the group consisting of:

• wherein:
• R1-R8 are independently selected from halogen, CN, NO2, COR, perhalogenated or partially halogenated C1-C10 alkyl groups, substituted or unsubstituted electron-withdrawing aryl-, or substituted or unsubstituted electron-withdrawing heteroaryl groups;
• R10-R15 are independently selected from hydrogen, halogen, CN, NO2, COR, C1-C10 alkyl, C1-C10 alkoxy, substituted or unsubstituted electron-withdrawing aryl-, or substituted or unsubstituted electron-withdrawing heteroaryl groups;
• X, X1, Y, and Y1 are independently selected from:
• wherein:
• Z is CN;
• R is selected from substituted or unsubstituted C1-C10 alkyl, substituted or unsubstituted aryl, or substituted or unsubstituted heteroaryl;
• Ar is an acceptor-substituted and halogenated aromatic hydrocarbon;
• and
• Hetaryl is an acceptor-substituted and/or halogenated, electron-withdrawing aromatic heterocyclic compound.