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US 9,484,883 B2Granted
Acoustic wave device and fabrication method of the same
AssigneeTaiyo Yuden Co., Ltd.
InventorsToshio Nishizawa, Yasuyuki Saito
Life of this patent
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Abstract
An acoustic wave device includes: a substrate; an input terminal that is located on a first surface of the substrate, and to which a high-frequency signal is input; a resonator that is connected to the input terminal, and to which a high-frequency signal input to the input terminal is input; and an insulating layer that is located between the input terminal and the substrate, and has a permittivity smaller than that of the substrate.
Claims15
An acoustic wave device comprising:
- a substrate;
- an input pad that is located on a first surface of the substrate, and to which a high-frequency signal is input;
- a resonator that is connected to the input pad, and to which the high-frequency signal input to the input pad is input, the resonator including an electrode located in contact with the first surface of the substrate;
- an input line pattern that is located on the first surface of the substrate and that connects the resonator to the input pad;
- and
- an insulating layer that is located in an entire area under the input pad on the first surface of the substrate and in an entire area under the input line pattern on the first surface of the substrate, and that has a relative permittivity smaller than that of the substrate, the insulating layer being absent under the electrode included in the resonator on the first surface of the substrate and extending beyond edges of the input pad and the input line pattern.
3 more elements
A fabrication method of an acoustic wave device comprising:
- forming an insulating layer on a first surface of a substrate, the insulating layer having a relative permittivity smaller than that of the substrate and being absent on at least a portion of the first surface of the substrate;
- forming an input pad, to which a high-frequency signal is input, on the insulating layer, the insulating layer extending beyond an edge of the input pad;
- forming an input line pattern connecting the resonator to the input pad, on the insulating layer, the insulating layer extending beyond an edge of the input line pattern;
- and
- forming a resonator, which is connected to the input pad and to which the high-frequency signal input to the input pad is input, on the at least portion of the first surface, the resonator including an electrode located in contact with the first surface of the substrate,
- wherein an entirety of the input pad and an entirety of the input line are formed on the insulating layer.
3 more elements
An acoustic wave device comprising:
- a substrate;
- an input terminal that is located on a first surface of the substrate, and to which a high-frequency signal is input;
- a resonator that is connected to the input terminal, and to which the high-frequency signal input to the input terminal is input;
- an insulating layer that is located between the input terminal and the substrate, and has a relative permittivity smaller than that of the substrate, the insulating layer being absent on at least a portion of the first surface of the substrate,
- an output terminal on the first surface of the substrate, from which a high-frequency signal output from the resonator is output;
- and
- a ground terminal on the first surface of the substrate to connect the resonator to a ground,
- wherein the insulating layer is absent between the output terminal and the substrate and between the ground terminal and the substrate.
5 more elements
Dependencies are inferred from the claim text.