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AssigneeApplied Materials, Inc.
InventorsQingjun Zhou, Jungmin Ko, Tom Choi, Sean Kang, Jeremiah Pender, Srinivas D. Nemani, Ying Zhang
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Embodiments described herein relate to methods for patterning a substrate. Patterning processes, such as double patterning and quadruple patterning processes, may benefit from the embodiments described herein which include performing an inert plasma treatment on a spacer material, performing an etching process on a treated region of the spacer material, and repeating the inert plasma treatment and the etching process to form a desired spacer profile. The inert plasma treatment process may be a biased process and the etching process may be an unbiased process. Various processing parameters, such as process gas ratios and pressures, may be controlled to influence a desired spacer profile.
A method of patterning a substrate, comprising:
A method of patterning a substrate, comprising:
A method of patterning a substrate, comprising:
Dependencies are inferred from the claim text.