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US 9,474,191 B2Granted
Power semiconductor module
AssigneeHitachi Automotive Systems, Ltd.
InventorsMasato Higuma, Toshifumi Sagawa, Takahiro Shimura, Hideto Yoshinari
Life of this patent
Estimating the term…
Abstract
Each of a plurality of power semiconductor module includes a can-type cooling case that is formed with a plate spring portion that generates compressive stress in the semiconductor circuit unit, an adjustment portion that is deformed to adjust elastic deformation of the plate spring portion, and a sidewall portion to which the plate spring portion and the adjustment portion are joined.
Claims10
A power semiconductor module comprising:
- a semiconductor device configured to perform conversion into DC power and AC power;
- conductor plates placed on both sides of the semiconductor device, the conductor plates being connected to electrode surfaces of the semiconductor device with solder;
- a sealed unit having the semiconductor device and the conductor plates sealed therein with resin;
- a case for housing the sealed unit;
- and an insulating member placed between the sealed unit and the case, wherein the case comprises:
- a first heat releasing member facing one surface of the sealed unit;
- a second heat releasing member facing another surface of the sealed unit on the opposite side from the one surface;
- a first joining member connected to the first heat releasing member while surrounding the first heat releasing member;
- a second joining member connected to the second heat releasing member while surrounding the second heat releasing member;
- and
- a sidewall portion connected to the first joining member and the second joining member,
- the second joining member has a larger amount of springback than an amount of springback of the first joining member,
- and
- the sealed unit is subjected to compressive stress generated from a difference in the amounts of springback between the first joining member and the second joining member,
- wherein a length of the second joining member is greater than a length of the first joining member.
12 more elements
A power semiconductor module comprising:
- a semiconductor device configured to perform conversion into DC power and AC power;
- conductor plates placed on both sides of the semiconductor device, the conductor plates being connected to electrode surfaces of the semiconductor device with solder;
- a sealed unit having the semiconductor device and the conductor plates sealed therein with resin;
- a case for housing the sealed unit;
- and an insulating member placed between the sealed unit and the case, wherein the case comprises:
- a first heat releasing member facing one surface of the sealed unit;
- a second heat releasing member facing another surface of the sealed unit on the opposite side from the one surface;
- a first joining member connected to the first heat releasing member while surrounding the first heat releasing member;
- a second joining member connected to the second heat releasing member while surrounding the second heat releasing member;
- and
- a sidewall portion connected to the first joining member and the second joining member,
- the sidewall portion is covered with the first heat releasing member and the first joining member on one end, and is covered with the second heat releasing member and the second joining member on another end,
- the second joining member has a larger amount of springback than an amount of springback of the first joining member, and
- the sealed unit is subjected to compressive stress generated from a difference in the amounts of springback between the first joining member and the second joining member,
- wherein a length of the second joining member is greater than a length of the first joining member.
12 more elements
Dependencies are inferred from the claim text.