Method of manufacturing semiconductor light emitting device package including light transmissive substrate having wavelength conversion regions

A method of manufacturing a semiconductor light emitting device package, the method comprising:

• arranging a plurality of light emitting structures on a support substrate, each light emitting structure including a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer;
• bonding a flat surface of a light transmissive substrate to the plurality of light emitting structures, the light transmissive substrate having a plurality of wavelength conversion regions corresponding to the plurality of light emitting structures, respectively;
• removing the support substrate from the plurality of light emitting structures after bonding the flat surface of the light transmissive substrate to the plurality of light emitting structures;
• and
• separating individual semiconductor light emitting device packages from one another by removing at least a portion of the light transmissive substrate,
• wherein the plurality of wavelength conversion regions is formed by forming recesses in the light transmissive substrate in positions corresponding to positions of the plurality of light emitting structures and filling the recesses with a wavelength conversion material,
• the light transmissive substrate includes SiO2, and
• the wavelength conversion regions are formed by injecting a mixture comprising phosphor mixed with SiO2 particles into the recesses and sintering the mixture.