Method and system for forming patterns with charged particle beam lithography
AssigneeD2S, Inc.
InventorsAkira Fujimura, Ingo Bork
Life of this patent
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Abstract
In a method for fracturing or mask data preparation or mask process correction for charged particle beam lithography, a plurality of shots are determined that will form a pattern on a surface, where shots are determined so as to reduce sensitivity of the resulting pattern to changes in beam blur (βf). In some embodiments, the sensitivity to changes in βf is reduced by varying the charged particle surface dosage for a portion of the pattern. Methods for forming patterns on a surface, and for manufacturing an integrated circuit are also disclosed, in which pattern sensitivity to changes in βf is reduced.
Claims12
A method for use with a charged particle beam lithographic process comprising a beam blur (βf), the method comprising:
- determining, during a fracturing or a mask data preparation or a mask process correction, a set of charged particle beam shots that will form a desired pattern on a surface by producing a charged particle dosage on the surface,
- wherein the determining comprises calculating a pattern formed on the surface, and wherein the calculating includes variation of βf due to variation in Coulomb effect.
A method for manufacturing a surface using a charged particle beam lithographic process comprising a beam blur (βf), the method comprising:
- determining a set of charged particle beam shots that will form a desired pattern on a surface by producing a charged particle dosage on the surface,
- wherein the determining comprises calculating a pattern formed on the surface, and wherein the calculating includes variation of βf due to Coulomb effect;
- and
- forming the pattern on the surface with the plurality of charged particle beam shots.
Dependencies are inferred from the claim text.