Methods for pre-cleaning conductive interconnect structures

A method of processing a substrate, comprising:

• heating a substrate disposed in a processing volume of a substrate processing chamber to a temperature of up to about 400 degrees Celsius, wherein the substrate comprises a first surface and an opening formed in the first surface and extending towards an opposing second surface having a copper material disposed in the second surface and aligned with the opening;
• heating an ampoule to a predetermined temperature to vaporize a liquid alcohol, wherein the ampoule is disposed exterior to the processing chamber;
• introducing the vaporized alcohol into the processing chamber;
• and
• exposing the substrate to substantially a process gas comprising about 80 to about 100 wt % of the vaporized alcohol to reduce a contaminated surface of the copper material, wherein the alcohol has a formula CnH2n+1—OH, and wherein n is a whole number.

A method of processing a substrate, comprising:

• heating a substrate disposed within a processing volume of a substrate processing chamber to a temperature of up to about 400 degrees Celsius, wherein the substrate comprises a first surface, an opposing second surface, and an opening formed in the first surface and extending towards the opposing second surface, and wherein the second surface comprises a conductive material disposed in the second surface and aligned with the opening;
• exposing the substrate to a process gas comprising about 80 to about 100 wt % of an alcohol to reduce a contaminated surface of the conductive material;
• and
• exposing the substrate to hydrogen radicals provided to the processing volume from a remote plasma source coupled to the substrate processing chamber, wherein the hydrogen radicals are provided to the processing volume at least one of prior to or concurrently with exposing the substrate to the process gas.