Method of growing III-N semiconductor layer on Si substrate
AssigneeTranslucent, Inc.
InventorsRytis Dargis, Andrew Clark, Nam Pham, Erdem Arkun
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Abstract
A method of growing III-N semiconducting material on a silicon substrate including the steps of growing a layer of epitaxial rare earth oxide on a single crystal silicon substrate and modifying the surface of the layer of epitaxial rare earth oxide with nitrogen plasma. The method further includes the steps of growing a layer of low temperature epitaxial gallium nitride on the modified surface of the layer of epitaxial rare earth oxide and growing a layer of bulk epitaxial III-N semiconductive material on the layer of low temperature epitaxial gallium nitride.
Claims15
A method of growing III-N semiconducting material on a silicon substrate comprising the steps of:
- providing a single crystal silicon substrate;
- growing a layer of epitaxial rare earth oxide on the silicon substrate, the layer of epitaxial rare earth oxide having a surface;
- terminating the surface of the layer of epitaxial rare earth oxide with nitrogen forming a nitrogen atom template;
- growing a layer of III-N material on the nitrogen terminated surface of the layer of epitaxial rare earth oxide;
- and
- growing a layer of bulk epitaxial III-N semiconductive material on the layer of III-N material.
A method of growing III-N semiconducting material on a silicon substrate comprising the steps of:
- providing a single crystal silicon substrate;
- epitaxially growing a first layer of rare earth oxide on the silicon substrate, the first layer of rare earth oxide being substantially lattice matched to the silicon substrate;
- epitaxially growing a second layer of rare earth oxide on the first layer of rare earth oxide, the second layer of rare earth oxide having a different lattice constant then the first layer of rare earth oxide creating a stress in the second layer of rare earth oxide;
- nitridizing the second layer of epitaxial rare earth oxide with nitrogen to form a nucleation layer;
- and
- epitaxially growing a layer of III-N material on the nucleation layer of epitaxial rare earth oxide.
A method of growing III-N semiconducting material on a silicon substrate comprising the steps of:
- providing a single crystal silicon substrate;
- growing a layer of epitaxial rare earth oxide on the silicon substrate, the layer of epitaxial rare earth oxide having a surface;
- modifying the surface of the layer of epitaxial rare earth oxide with a nitrogen plasma using the following parameters:
- the nitrogen plasma has an atomic-to-molecular ratio in a range of 2 to 4 and the substrate temperature during the nitrogen plasma modification is in a range of 550° C. to 850° C.;
- growing a layer of low temperature epitaxial gallium nitride on the modified surface of the layer of epitaxial rare earth oxide using the parameters:
- a substrate temperature in a range of 450° C. to 650° C.;
- atomic-to-molecular nitrogen ratio in the plasma in a range of 2 to 4;
- and gallium vapor partial pressure of approximately 1×10−6 Torr;
- and
- growing a layer of bulk epitaxial III-N semiconductive material on the layer of low temperature epitaxial gallium nitride using the parameters:
- a substrate temperature in a range of 800° C. to 950° C.;
- a gallium vapor partial pressure of approximately 2.5×10−6 Torr;
- and an atomic-to-molecular nitrogen ratio in the plasma in a range of 2 to 4.
Dependencies are inferred from the claim text.