Solid-state imaging device, method of manufacturing solid-state imaging device and electronic apparatus

An imaging device comprising:

• a photoelectric conversion element in a substrate and configured to generate electric charge;
• an electric-charge holding region configured to receive the electric charge from the photoelectric conversion element;
• and
• a transfer gate having a transfer electrode, a first transfer path through which the electric charge accumulated in the photoelectric conversion element is transferred into the electric-charge holding region under control of the transfer electrode, and an second transfer path through which the electric charge generated by the photoelectric conversion element during an exposure period and being in excess of a predetermined charge amount is allowed to migrate into the electric-charge holding region regardless of control by the transfer electrode,
• wherein,
• the first transfer path and the second transfer path are in different regions,
• the transfer gate electrode is over a surface of the substrate,
• the electric-charge holding region is in the substrate under the transfer electrode, the surface of the substrate being between the transfer electrode and the electric charge holding region,
• the first transfer path underlies the transfer electrode,
• the second transfer path comprises a first impurity diffusion region of a first conductivity type and a second impurity diffusion region of a second conductivity type different from the first impurity type,
• the first impurity diffusion region is between the photoelectric conversion element and the electric-charge holding region,
• the second impurity diffusion region is between the photoelectric conversion element and the electric-charge holding region and between the first impurity diffusion region and the surface of the substrate, and
• the second impurity diffusion region is a region distinct from the path formed in the first impurity diffusion region.