# US 9,449,846 B2 · Vertical gate separation > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 9,449,846 B2 - Document ID: US9449846B2 - Status: Granted - Kind: B2 - Application number: 14/607,883 - Filed: 2015-01-28 - Published: 2016-07-28 - Granted: 2016-09-20 - Earliest claimed: 2015-01-28 - Assignees: Applied Materials, Inc. - Applicants: Applied Materials, Inc. - Inventors: Jie Liu; Vinod R. Purayath; Xikun Wang; Anchuan Wang; Nitin K. Ingle - Web page: https://patentgrep.com/patent/US9449846B2 ## CPC - H10P 50/267: {using plasmas} - H01J 37/32357: {Generation remote from the workpiece, e.g. down-stream} - H01J 37/32422: {Arrangement for selecting ions or species in the plasma} - H01J 37/3244: {Gas supply means} - H01J 37/32954: {Electron temperature measurement} - H10D 84/0135: {Manufacturing their gate conductors} - H10D 84/038: {using silicon technology, e.g. SiGe} - H10P 50/266: {by vapour etching only} - H10B 43/27: the channels comprising vertical portions, e.g. U-shaped channels - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10B: ELECTRONIC MEMORY DEVICES ## Abstract Methods of selectively etching tungsten from the surface of a patterned substrate are described. The methods electrically separate vertically arranged tungsten slabs from one another as needed. The vertically arranged tungsten slabs may form the walls of a trench during manufacture of a vertical flash memory cell. The tungsten etch may selectively remove tungsten relative to films such as silicon, polysilicon, silicon oxide, aluminum oxide, titanium nitride and silicon nitride. The methods include exposing electrically-shorted tungsten slabs to remotely-excited fluorine formed in a remote plasma region. Process parameters are provided which result in uniform tungsten recess within the trench. A low electron temperature is maintained in the substrate processing region to achieve high etch selectivity and uniform removal throughout the trench. ## Claims ### Claim 1 A method of etching a patterned substrate, the method comprising: placing the patterned substrate in a substrate processing region of a substrate processing chamber, wherein the patterned substrate comprises electrically-shorted tungsten slabs arranged in at least one of two adjacent vertical columns, wherein a trench is disposed between the two adjacent vertical columns; flowing a fluorine-containing precursor into a remote plasma region within the substrate processing chamber and exciting the fluorine-containing precursor in a remote plasma in the remote plasma region to produce plasma effluents, wherein the remote plasma region is fluidly coupled with the substrate processing region through a showerhead and the remote plasma is capacitively-coupled; and flowing the plasma effluents into the substrate processing region through the showerhead and etching the electrically-shorted tungsten slabs, wherein an electron temperature in the substrate processing region while selectively etching the electrically-shorted tungsten slabs is below 0.5 eV, and wherein a pressure within the remote plasma region is between 5 Torr and 12 Torr during etching the electrically-shorted tungsten slabs. ### Claim 2 (depends on 1) The method of claim 1 wherein the remote plasma is capacitively-coupled with a remote plasma power of between 100 watts and 500 watts. ### Claim 3 (depends on 1) The method of claim 1 wherein etching the electrically-shorted tungsten slabs electrically isolates the electrically-shorted tungsten slabs from one another to form electrically-isolated tungsten slabs. ### Claim 4 (depends on 1) The method of claim 1 wherein the fluorine-containing precursor comprises at least one of atomic fluorine, diatomic fluorine, bromine trifluoride, chlorine trifluoride, nitrogen trifluoride, hydrogen fluoride, fluorinated hydrocarbons, sulfur hexafluoride and xenon difluoride. ### Claim 5 (depends on 1) The method of claim 1 wherein a depth-to-width aspect ratio of the trench is at least ten. ### Claim 6 (depends on 1) The method of claim 1 wherein the at least one of the two adjacent vertical columns comprise at least thirty tungsten slabs. ### Claim 7 (depends on 1) The method of claim 1 wherein a depth of the trench is greater than one micron. ### Claim 8 (depends on 1) The method of claim 1 wherein a temperature of the patterned substrate is maintained at between 50° C. and about 80° C. during etching the electrically-shorted tungsten slabs. ### Claim 9 (depends on 1) The method of claim 1 wherein the electrically-shorted tungsten slabs consist of tungsten and a barrier layer. ### Claim 10 A method of etching a patterned substrate, the method comprising: placing the patterned substrate in a substrate processing region of a substrate processing chamber, wherein the patterned substrate comprises electrically-shorted conducting slabs arranged in a vertical column, wherein a trench is disposed between the vertical column and an adjacent vertical column; generating a plasma in a remote plasma region of the substrate processing chamber, wherein the remote plasma region is physically separated from the substrate processing region by at least one chamber component, and wherein the plasma produces plasma effluents; reducing the electron temperature of the plasma effluents by passing the plasma effluents through an electron beam generated in the substrate processing region of the chamber, wherein the substrate processing region is maintained plasma free; gas-phase etching the electrically-shorted conducting slabs, wherein the operation of gas-phase etching electrically separates the electrically-shorted conducting slabs to form electrically-isolated conducting slabs; and recessing the electrically-isolated conducting slabs beyond an extent of insulating material between each adjacent pair of the electrically-isolated conducting slabs by a recessed amount. ### Claim 11 (depends on 10) The method of claim 10 wherein each conducting slab is characterized by a length parallel to the substrate, and wherein the length of each slab is within 0.5 nm of an average length for all conducting slabs prior to the operation of gas-phase etching the electrically-shorted conducting slabs. ### Claim 12 (depends on 10) The method of claim 10 wherein each conducting slab is characterized by a length parallel to the substrate, and wherein the length of each slab is within 0.5 nm of an average length for all conducting slabs after the operation of gas-phase etching the electrically-shorted conducting slabs. ### Claim 13 A method of etching a patterned substrate, the method comprising: placing the patterned substrate in a substrate processing region of a substrate processing chamber, wherein the patterned substrate comprises electrically-shorted tungsten slabs arranged in at least one of two adjacent vertical columns, wherein a trench is disposed between the two adjacent vertical columns, wherein the tungsten slabs are disposed vertically from one another within the vertical columns, and wherein each tungsten slab is vertically separated from at least one other tungsten slab by a region of silicon oxide; flowing a radical-fluorine precursor into the substrate processing region; and selectively etching the electrically-shorted tungsten slabs, wherein selectively etching the electrically-shorted tungsten slabs electrically isolates each of the electrically-shorted tungsten slabs from one another to form electrically-isolated tungsten slabs. ### Claim 14 (depends on 13) The method of claim 13, wherein the tungsten slabs are electrically shorted by a region of tungsten extending perpendicular to the substrate and contacting each vertically separated tungsten slab. ### Claim 15 (depends on 14) The method of claim 14, wherein the selective etching removes the region of tungsten extending perpendicular to the substrate.