Frequency enhanced active transistor

A circuit comprising:

• a first transistor cell having a collector, a base, and an emitter, wherein the first transistor cell is a first amplification stage, and the first transistor cell further comprises a first transistor including an emitter, a base, and a collector, a second transistor including an emitter, a base, and a collector, and a third transistor including an emitter, a base, and a collector, wherein the collector of the first transistor is connected to the collector of the second transistor and the emitter of the first transistor is connected to the base of the second transistor, and wherein the collector of the third transistor is connected to the base of the second transistor, the base of the third transistor is connected to the base of the second transistor, and the emitter of the second transistor is connected to the emitter of the third transistor;
• and
• wherein a current at the collector of the first transistor cell produces a minimum transconductance in the first transistor cell that increases a current gain of the first transistor cell and improves at least one operating characteristic of the first transistor cell;
• a second transistor cell having a collector and a base, wherein the emitter of the first transistor cell is connected to the collector of the second transistor cell, wherein the second transistor cell further comprises a first transistor, a second transistor and a third transistor.