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US 9,443,997 B2Granted
Hybrid CZTSSe photovoltaic device
AssigneeInternational Business Machines Corporation
InventorsTayfun Gokmen, Oki Gunawan, Richard A. Haight, Jeehwan Kim, David B. Mitzi, Mark T. Winkler
Life of this patent
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Abstract
A photovoltaic device includes a first contact and a hybrid absorber layer. The hybrid absorber layer includes a chalcogenide layer and a semiconductor layer in contact with the chalcogenide layer. A buffer layer is formed on the absorber layer, and a transparent conductive contact layer is formed on the buffer layer.
Claims10
A photovoltaic device, comprising:
- a first contact;
- a hybrid absorber layer comprising:
- a chalcogenide layer of Cu—Zn—Sn—S(Se) (CZTSSe), wherein the chalcogenide layer of Cu—Zn—Sn—S(Se) (CZTSSe) is intrinsic;
- and
- a first semiconductor layer including Cu—In—Ga—S,Se (CIGSSe), the semiconductor layer having a p-type conductivity, wherein a first surface of the first semiconductor layer is in contact with the chalcogenide layer of Cu—Zn—Sn—S(Se) (CZTSSe) and a second surface in contact with the first contact;
- a second semiconductor layer that is in contact with a surface of the chalcogenide layer of Cu—Zn—Sn—S(Se) (CZTSSe) that is opposite a surface of the chalcogenide layer of Cu—Zn—Sn—S(Se) (CZTSSe) that the first semiconductor layer is present on;
- a buffer layer having an n-type conductivity formed on the second semiconductor layer;
- and
- a transparent conductive contact layer formed on the buffer layer.
6 more elements
A photovoltaic device, comprising:
- a substrate;
- a first contact formed on the substrate;
- a hybrid absorber layer comprising:
- a Cu—Zn—Sn—S(Se) (CZTSSe) layer, wherein the Cu—Zn—Sn—S(Se) (CZTSSe) layer is intrinsic;
- and
- a first semiconductor layer in contact with the CZTSSe layer, wherein the first semiconductor layer is a p-type semiconductor layer;
- a second semiconductor layer that is in contact with a surface of the Cu—Zn—Sn—S(Se) (CZTSSe) layer that is opposite a surface of the Cu—Zn—Sn—S(Se) (CZTSSe) layer that the first semiconductor layer is present on the Cu—Zn—Sn—S(Se) (CZTSSe) layer;
- a buffer layer formed on the absorber layer, the buffer layer is an n-type semiconductor layer;
- a transparent conductive contact layer formed on the buffer layer;
- and
- metal contacts formed on the transparent conductive contact layer, the metal contacts and the transparent conductive contact layer forming a front light-receiving surface, wherein the at least one semiconductor layer, the Cu—Zn—Sn—S(Se) (CZTSSe) layer layer, and the buffer layer provide a p-i-n solar cell structure.
8 more elements
Dependencies are inferred from the claim text.