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OwnerValèrie Keller-Spitzer, Nicolas Keller +2inventors
InventorsValèrie Keller-Spitzer, Nicolas Keller, Mathieu Grandcolas, Alain Louvet
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The invention relates to textile fibers at least partially covered with a nanometric-sized semiconducting material having photocatalytic properties for degrading chemical compounds, in particular chemical or biological agents, wherein said semiconducting material is in the form of nanostructure or nanocomposites with a one-dimensional morphology. The textile fibers can be used for application in the military, medical, and civilian domains, etc. The curves 60 and 62 respectively show the photocatalytic degradation of organic compounds at the surface of textile fibers covered with nanostructures or nanocomposites having a one-dimensional morphology according to the invention, and nanoparticles having a granular morphology according to the prior art. The nanostructures are nanocomposites of the invention 60 are more efficient.
A process for preparing textile fibers at least partially covered with a semiconductive material with photocatalytic properties for degrading organic compounds, wherein the semiconductive material is in the form of nanostructures (10, 12) of one-dimensional morphology of said semiconductive material, and/or of nanoparticles (16) of said semiconductive material that are attached to nanostructures (14, 18) of one-dimensional morphology of a support material chosen from a semiconductive material and a non-semiconductive material, wherein:
A process for preparing textile fibers at least partially covered with a semiconductive material with photocatalytic properties for degrading organic compounds, wherein the semiconductive material is in the form of nanostructures (10, 12) of one-dimensional morphology of a first semiconductive material, and of nanoparticles (16) of a second semiconductive material that are attached to nanostructures (14, 18) of one-dimensional morphology wherein:
A process for preparing textile fibers at least partially covered with a semiconductive material which is in the form of nanostructure (10, 12) of one-dimensional morphology of said semiconductive material consisting of:
Dependencies are inferred from the claim text.