# US 9,438,840 B2 · Solid-state image capturing apparatus, driving method thereof and electronic apparatus > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 9,438,840 B2 - Document ID: US9438840B2 - Status: Granted - Kind: B2 - Application number: 14/831,538 - Filed: 2015-08-20 - Published: 2015-12-10 - Granted: 2016-09-06 - Earliest claimed: 2009-01-28 - Assignees: Sony Corporation - Applicants: Sony Corporation - Inventors: Yusuke Oike - Web page: https://patentgrep.com/patent/US9438840B2 ## CPC - H04N 25/766: comprising control or output lines used for a plurality of functions, e.g. for pixel output, driving, reset or power - H04N 25/532: by controlling global shutters in CMOS SSIS - H04N 25/76: Addressed sensors, e.g. MOS or CMOS sensors - H04N 25/77: Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components - H04N 25/771: comprising storage means other than floating diffusion - H04N 25/778: comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself - H04N 25/78: Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters - H10F 39/803: {Pixels having integrated switching, control, storage or amplification elements} - H04N: PICTORIAL COMMUNICATION, e.g. TELEVISION - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION ## Abstract A solid-state imaging device, with (a) a pixel array unit including two-dimensionally arranged pixels each including (i) a photoelectric conversion element, (ii) a select transistor configured to perform pixel selection, and (iii) a charge discharging transistor configured to selectively discharge the charges accumulated in the photoelectric conversion element; and (b) driving circuitry operable to drive reading of output signals from the pixels of the pixel array unit, for each pixel the driving circuitry driving the charge discharging transistor using a select transistor driving signal. ## Claims ### Claim 1 A solid-state imaging device, comprising: pixel units arranged in rows and columns; and driving circuitry operable to drive readings of output signals from the pixel units, wherein each of the pixel units includes: a photoelectric conversion element configured to convert incident light into a charge, a transfer transistor connected to the photoelectric conversion element, the transfer transistor is configured to transfer the charge accumulated in the photoelectric conversion element, a floating capacitance that holds the charge transferred by the transfer transistor from the photoelectric conversion element, and a memory unit that holds the charge transferred from the photoelectric conversion element separately from the floating capacitance, a first transistor configured to perform pixel selection, a second transistor configured to selectively discharge the charge accumulated in the photoelectric conversion element, and a charge holding section, and wherein the driving circuitry drives the second transistor using a first transistor driving signal. ### Claim 2 (depends on 1) The solid-state imaging device of claim 1, wherein for a given one of the pixel units, the second transistor is driven by a first transistor driving signal for the first transistor of another one of the pixel units. ### Claim 3 (depends on 2) The solid-state imaging device of claim 2, wherein said another one of the pixel units is an adjacent one of the pixel units. ### Claim 4 (depends on 2) The solid-state imaging device of claim 2, wherein said another one of the pixel units is in an adjacent row. ### Claim 5 (depends on 1) The solid-state imaging device of claim 1, wherein the solid-state imaging device is CMOS imager. ### Claim 6 (depends on 1) The solid-state imaging device of claim 1, wherein said each of the pixel units further comprises an output amplifier to which the first transistor is connected. ### Claim 7 A solid-state imaging device, comprising: pixel units arranged in rows and columns; and driving circuitry operable to drive readings of output signals from the pixel units, and the driving circuitry connected to a control line wherein each of the pixel units includes: a photoelectric conversion element configured to convert incident light into a charge, a transfer transistor connected to the photoelectric conversion element, the transfer transistor is configured to transfer the charge accumulated in the photoelectric conversion element, a floating capacitance that holds the charge transferred by the transfer transistor from the photoelectric conversion element, and a memory unit that holds the charge transferred from the photoelectric conversion element separately from the floating capacitance, a first transistor configured to perform pixel selection, the first transistor is connected to the control line, a second transistor configured to selectively discharge the charges accumulated in the photoelectric conversion element, the second transistor is connected to the control line, and a charge holding section. ### Claim 8 (depends on 7) The solid-state imaging device of claim 7, wherein for a given one of the pixel units, the second transistor is driven by a first transistor driving signal for the first transistor of another one of the pixel units. ### Claim 9 (depends on 8) The solid-state imaging device of claim 8, wherein said another one of the pixel units is an adjacent one of the pixel units. ### Claim 10 (depends on 9) The solid-state imaging device of claim 9 wherein said another one of the pixel units is in an adjacent row. ### Claim 11 (depends on 7) The solid-state imaging device of claim 7, wherein the solid-state imaging device is CMOS imager. ### Claim 12 (depends on 7) The solid-state imaging device of claim 7, wherein said each one of the pixel units further comprises an output amplifier to which the first transistor is connected.