# US 9,438,345 B2 · Optical module and fabrication method thereof

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- Number: US 9,438,345 B2
- Document ID: US9438345B2
- Status: Granted
- Kind: B2
- Application number: 14/557,985
- Filed: 2014-12-02
- Published: 2015-05-14
- Granted: 2016-09-06
- Earliest claimed: 2013-04-28
- Assignees: Huawei Technologies Co., Ltd.
- Applicants: Huawei Technologies Co., Ltd.
- Inventors: Liping Wang; Xiquan Dai
- Web page: https://patentgrep.com/patent/US9438345B2

## CPC

- H01S 5/0265: {Intensity modulators (intra-cavity modulators H01S5/0625)}
- H04B 10/27: Arrangements for networking
- H04B 10/505: {using external modulation}
- H04B 10/564: Power control
- H01S 5/0085: {for modulating the output, i.e. the laser beam is modulated outside the laser cavity}
- H01S 5/02251: using optical fibres
- H01S 5/50: Amplifier structures not provided for in groups H01S5/02 - H01S5/30
- H01S: DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H04B: TRANSMISSION

## Abstract

The optical module includes an optical component, a substrate, and a laser, an electro-absorption modulator, and a semiconductor optical amplifier that grow on the substrate, where: the electro-absorption modulator is located between the laser and the semiconductor optical amplifier; the laser is configured to output an optical signal after power-on; the electro-absorption modulator is configured to perform signal modulation on the optical signal output by the laser; the semiconductor optical amplifier is configured to amplify the optical signal modulated by the electro-absorption modulator; the optical component is configured to perform deflection and convergence for the optical signal amplified by the semiconductor optical amplifier and output the optical signal.

## Claims

### Claim 1

A method for fabricating an optical module, comprising:
growing an epitaxial material of a laser on a substrate;
etching the epitaxial material of the laser to acquire the laser and an electro-absorption modulator window;
growing an epitaxial material of an electro-absorption modulator in the electro-absorption modulator window on the substrate;
etching the epitaxial material of the electro-absorption modulator to acquire an electro-absorption modulator and a semiconductor optical amplifier window, wherein the electro-absorption modulator is located between the laser and the semiconductor optical amplifier window;
growing an epitaxial material of a semiconductor optical amplifier in the semiconductor optical amplifier window on the substrate;
etching the epitaxial material of the semiconductor optical amplifier to acquire a semiconductor optical amplifier, wherein the electro-absorption modulator is located between the laser and the semiconductor optical amplifier; and
assembling an optical component on one side of the semiconductor optical amplifier, and ensuring that the semiconductor optical amplifier is located between the electro-absorption modulator and the optical component; wherein:
the laser outputs an optical signal after power-on; the electro-absorption modulator performs signal modulation on the optical signal output by the laser; the semiconductor optical amplifier amplifies the optical signal modulated by the electro-absorption modulator; the optical component performs deflection and convergence for the optical signal amplified by the semiconductor optical amplifier and outputs the optical signal.

### Claim 2 (depends on 1)

The method according to claim 1, further comprising:
abutting a semiconductor refrigerator against the substrate, wherein the semiconductor refrigerator is located on one side of the substrate that is opposite to the side of the substrate wherein the laser, the electro-absorption modulator, and the semiconductor optical amplifier are located.

### Claim 3

A method for fabricating an optical module, comprising:
growing an epitaxial material of a laser on a substrate;
etching the epitaxial material of the laser to acquire a laser and a semiconductor optical amplifier window;
growing an epitaxial material of a semiconductor optical amplifier in the semiconductor optical amplifier window on the substrate;
etching the epitaxial material of the semiconductor optical amplifier to acquire a semiconductor optical amplifier and an electro-absorption modulator window, wherein the semiconductor optical amplifier is located between the laser and the electro-absorption modulator window; and
growing an epitaxial material of an electro-absorption modulator in the electro-absorption modulator window on the substrate;
etching the epitaxial material of the electro-absorption modulator to acquire an electro-absorption modulator, wherein the semiconductor optical amplifier is located between the laser and the electro-absorption modulator; and
assembling an optical component on one side of the electro-absorption modulator, and ensuring that the electro-absorption modulator is located between the semiconductor optical amplifier and the optical component; wherein:
the laser outputs an optical signal after power-on; the semiconductor optical amplifier amplifies the optical signal output by the laser; the electro-absorption modulator performs signal modulation on the optical signal amplified by the semiconductor optical amplifier; the optical component performs deflection and convergence for the optical signal modulated by the electro-absorption modulator and outputs the optical signal.

### Claim 4 (depends on 3)

The method according to claim 3, further comprising:
abutting the semiconductor refrigerator against the substrate, wherein the semiconductor refrigerator is located on one side of the substrate that is opposite to the side of the substrate wherein the laser, the semiconductor optical amplifier, and the electro-absorption modulator are located.