# US 9,438,226 B2 · Semiconductor device including functional circuits

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- Number: US 9,438,226 B2
- Document ID: US9438226B2
- Status: Granted
- Kind: B2
- Application number: 14/687,232
- Filed: 2015-04-15
- Published: 2015-12-17
- Granted: 2016-09-06
- Earliest claimed: 2014-06-11
- Assignees: Fuji Electric Co., Ltd.
- Applicants: Fuji Electric Co., Ltd.
- Inventors: Takanori Kohama
- Web page: https://patentgrep.com/patent/US9438226B2

## CPC

- H03K 17/22: Modifications for ensuring a predetermined initial state when the supply voltage has been applied (bi-stable generators H03K3/12)
- H03K: PULSE TECHNIQUE (measuring pulse characteristics G01R; modulating sinusoidal oscillations with pulses H03C; transmission of digital information H04L; discriminator circuits detecting phase difference between two signals by counting or integrating cycles of oscillation H03D3/04; automatic control, starting, synchronisation or stabilisation of generators of electronic oscillations or pulses where the type of generator is irrelevant or unspecified H03L; coding, decoding or code conversion, in general H03M)

## Abstract

In some aspects of the invention, provided is a semiconductor device capable of compensating sufficiently instantaneous drop of power source voltage without enlarging device scale extremely. When digital circuit and power device driving circuit are formed on chip in the state connected to power source in common in parallel, for digital circuit of functional circuit remaining abnormal state after power source recovery and analog circuit and power device driving circuit of functional circuit retaining continuously normal state even before power source recovery, resistors are formed on chip in power source E side of the functional circuits, and in addition, capacitors are formed on chip 1 in parallel with the functional circuits, and consequently, it becomes possible to enlarge each resistance value of resistors as compared with a case of attaching externally resistors and capacitors in the entire chip.

## Claims

### Claim 1

A semiconductor device including an integrated circuit on a chip, the semiconductor device comprising:
a plurality of functional circuits connected to a common power source in parallel, the plurality of functional circuits including at least a first functional circuit and a second functional circuit, the first functional circuit including internally stored data;
a first resistor provided on the chip in a power source side of the first functional circuit;
a second resistor provided on the chip in a power source side of the second functional circuit:
a first capacitor provided on the chip in parallel with the first functional circuit; and
a second capacitor provided on the chip in parallel with the second functional circuit;
wherein the first functional circuit includes a first predetermined minimum operating voltage level;
wherein the second functional circuit includes a second predetermined minimum operating voltage level, the second predetermined minimum operating voltage level being higher than the first predetermined minimum voltage level;
wherein the first capacitor is configured to maintain the first predetermined minimum operating voltage level at the first functional circuit for a first predetermined time or longer, during a transient of the power source; and
wherein the second capacitor is configured to maintain the second predetermined minimum operating voltage level at the second functional circuit for a second predetermined amount of time or longer, during a transient of the power source.

### Claim 2 (depends on 1)

The semiconductor device according to claim 1, wherein the first functional circuit is a digital circuit.

### Claim 3 (depends on 1)

The semiconductor device according to claim 1, wherein the second functional circuit is an analog circuit.

### Claim 4 (depends on 1)

The semiconductor device according to claim 1, wherein the second functional circuit is a driving circuit.

### Claim 5 (depends on 1)

The semiconductor device according to claim 1, wherein the first resistor comprises a resistance value to achieve a predetermined operating current of the first functional circuit.

### Claim 6 (depends on 1)

The semiconductor device according to claim 1, wherein the second resistor comprises a resistance value to achieve a predetermined operating current of the second functional circuit.