# US 9,438,173 B2 · Multiple-series amplifying device

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- Number: US 9,438,173 B2
- Document ID: US9438173B2
- Status: Granted
- Kind: B2
- Application number: 14/403,291
- Filed: 2012-05-29
- Published: 2015-10-22
- Granted: 2016-09-06
- Earliest claimed: 2012-05-29
- Assignees: NEC Corporation
- Applicants: Yoji Murao
- Inventors: Yoji Murao
- Web page: https://patentgrep.com/patent/US9438173B2

## CPC

- H03F 1/0288: {using a main and one or several auxiliary peaking amplifiers whereby the load is connected to the main amplifier using an impedance inverter, e.g. Doherty amplifiers}
- H03F 3/189: High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F 3/211: {using a combination of several amplifiers (H03F3/60 takes precedence)}
- H03F 3/245: {with semiconductor devices only}
- H03F 3/602: {Combinations of several amplifiers}
- H03F 3/68: Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics {(power amplifiers using a combination of several semiconductor amplifiers H03F3/211; combinations of amplifiers using coupling networks with distributed constants H03F3/602)}
- H03F 2203/21106: An input signal being distributed in parallel over the inputs of a plurality of power amplifiers
- H03F 2203/21157: A filter circuit being added at the output of a power amplifier stage
- H03F: AMPLIFIERS

## Abstract

A multiple-series amplifying device (100) of the present invention includes multiple series of amplifiers (110, 120) which are formed in parallel so as to input and output signals individually. Each of multiple-series of amplifiers (110, 120) includes a plurality of semiconductor amplifying elements (111, 112, 121, 122) which are driven in parallel so as to amplify signals. A pair of semiconductor amplifying elements (112, 121) adjoining together in a pair of amplifiers (110, 120) is formed in a single package (130).

## Claims

### Claim 1

A multiple-series amplifying device comprising:
a first amplifier including a first pair of semiconductor amplifying elements coupled together, wherein the first amplifier is configured to amplify a first high-frequency signal; and
a second amplifier including a second pair of semiconductor amplifying elements coupled together, wherein the second amplifier is configured to amplify a second high-frequency signal,
wherein the first amplifier and the second amplifier are disposed in parallel such that a first semiconductor amplifying element, included in the first pair of semiconductor amplifying elements, is positioned adjacent to a second semiconductor amplifying element included in the second pair of semiconductor amplifying elements, and
wherein the first semiconductor amplifying element and the second semiconductor amplifying element are partitioned using an electric isolation and formed in a single package.

### Claim 2 (depends on 1)

The multiple-series amplifying device according to claim 1, wherein the electric isolation is made of a metal wall.

### Claim 3 (depends on 2)

The multiple-series amplifying device according to claim 2, further comprising:
a printed circuit board used to form the first and second amplifiers thereon;
a signal transmitting line, made of a microstrip line formed on the printed circuit board, which is configured to transmit first or second high-frequency signal to the first or second amplifier;
a ground pattern applied to the signal transmitting line formed on the printed circuit board; and
a metal pattern which is formed on the printed circuit board so as to connect the metal wall to the ground pattern.

### Claim 4 (depends on 3)

The multiple-series amplifying device according to claim 3, wherein the first and second amplifiers, the signal transmitting line, and the metal pattern are formed on a surface of the printed circuit boards, wherein the ground pattern is formed on a back of the printed circuit board, and wherein the metal pattern is connected to the ground pattern through via-holes formed in the printed circuit board.

### Claim 5 (depends on 1)

The multiple-series amplifying device according to claim 1, wherein each of the first and second amplifiers includes a distributor used to distribute the first or second high-frequency signal, the first or second pair of semiconductor amplifying elements, and a combiner used to combine the amplified signals.

### Claim 6 (depends on 1)

The multiple-series amplifying device according to claim 1, wherein the first or second amplifier serves as a Doherty amplifier including a pair of a carrier amplifier and a peak amplifier with the first or second pair of semiconductor amplifying elements, and wherein the first and second semiconductor amplifying elements coupled together correspond to a pair of carrier amplifiers coupled together or a pair of peak amplifiers coupled together.

### Claim 7 (depends on 6)

The multiple-series amplifying device according to claim 6, wherein each of the first and second amplifiers serves as an asymmetrical Doherty amplifier with a disproportional ratio between the carrier amplifier and the peak amplifier in terms of a number of semiconductor amplifying elements.

### Claim 8 (depends on 1)

The multiple-series amplifying device according to claim 1, further comprising:
a power supply line configured to supply DC power to the first and second semiconductor amplifying elements formed in the single package; and
a power supply circuit configured to supply the DC power to the first and second pair of semiconductor amplifying elements other than the first and second semiconductor amplifying elements,
wherein the power supply circuit allows the DC power to be transmitted therethrough but blocks a first or second high-frequency current.

### Claim 9 (depends on 8)

The multiple-series amplifying device according to claim 8, wherein the power supply circuit is made of a low-pass filter including a capacitor and coils.
