# US 9,438,112 B2 · Power converter including integrated driver for depletion mode group III-V transistor > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 9,438,112 B2 - Document ID: US9438112B2 - Status: Granted - Kind: B2 - Application number: 13/949,155 - Filed: 2013-07-23 - Published: 2014-02-27 - Granted: 2016-09-06 - Earliest claimed: 2012-08-23 - Assignees: Infineon Technologies Americas Corp. - Applicants: Infineon Technologies Americas Corp. - Inventors: Alberto Guerra; Ahmed Masood - Web page: https://patentgrep.com/patent/US9438112B2 ## CPC - H02M 3/158: including plural semiconductor devices as final control devices for a single load - H02M 7/538: in a push-pull configuration (H02M7/5375 takes precedence {; with oscillating arrangements H02M7/53832, H02M7/53846}) - H03K 17/08: Modifications for protecting switching circuit against overcurrent or overvoltage - H02M: APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF (transformers H01F; dynamo-electric converters H02K47/00; controlling transformers, reactors or choke coils, control or regulation of electric motors, generators or dynamo-electric converters H02P) - H03K: PULSE TECHNIQUE (measuring pulse characteristics G01R; modulating sinusoidal oscillations with pulses H03C; transmission of digital information H04L; discriminator circuits detecting phase difference between two signals by counting or integrating cycles of oscillation H03D3/04; automatic control, starting, synchronisation or stabilisation of generators of electronic oscillations or pulses where the type of generator is irrelevant or unspecified H03L; coding, decoding or code conversion, in general H03M) ## Abstract In one implementation, a power converter includes an output stage integrated circuit (IC) on a group III-V die, and a driver IC for driving the output stage IC, the driver IC fabricated on a group IV die. The power converter also includes a composite power switch split between the group III-V die and the group IV die, wherein a depletion mode group III-V transistor of the composite power switch is monolithically integrated in the group III-V die, and a group IV control switch of the composite power switch is monolithically integrated in the group IV die. As a result, the depletion mode group III-V transistor may be operated as an enhancement mode transistor. ## Claims ### Claim 1 A power converter comprising: an output stage integrated circuit (IC) on a group III-V die, a driver IC for driving said output stage IC, said driver IC fabricated on a group IV die; a composite power switch split between said group III-V die and said group IV die, wherein a depletion mode group III-V transistor of said composite power switch is monolithically integrated in said group III-V die, and a group IV control switch of said composite power switch is monolithically integrated in said group IV die; said depletion mode group III-V transistor being operated as an enhancement mode transistor. ### Claim 2 (depends on 1) The power converter of claim 1, wherein said group III-V die comprises a III-Nitride die. ### Claim 3 (depends on 1) The power converter of claim 1, wherein said group IV die comprises a silicon die. ### Claim 4 (depends on 1) The power converter of claim 1, wherein said group IV control switch is a low voltage (LV) switch. ### Claim 5 (depends on 1) The power converter of claim 1, wherein said group IV control switch comprises a silicon field-effect transistor (FET). ### Claim 6 (depends on 1) The power converter of claim 1, wherein said depletion mode group III-V transistor comprises a depletion mode III-Nitride FET. ### Claim 7 (depends on 1) The power converter of claim 1, wherein said depletion mode group III-V transistor is selected from the group consisting of a midvoltage (MV) transistor and a high voltage (HV) transistor. ### Claim 8 (depends on 1) The power converter of claim 1, wherein said depletion mode group III-V transistor comprises a III-Nitride high electron mobility transistor (HEMT). ### Claim 9 (depends on 1) The power converter of claim 1, wherein said power converter is a buck converter. ### Claim 10 (depends on 1) The power converter of claim 1, wherein said power converter is enclosed in a package configured to contain only two semiconductor dies. ### Claim 11 A power converter comprising: two depletion mode GaN transistors monolithically integrated in an output stage die; said two depletion mode GaN transistors being driven by two silicon control switches monolithically integrated in a driver IC die; said two depletion mode GaN transistors being operated as enhancement mode transistors. ### Claim 12 (depends on 11) The power converter of claim 11, wherein said output stage die comprises a III-Nitride die. ### Claim 13 (depends on 11) The power converter of claim 11, wherein said driver IC die comprises a group IV die. ### Claim 14 (depends on 11) The power converter of claim 11, wherein said driver IC die comprises a silicon die. ### Claim 15 (depends on 11) The power converter of claim 11, wherein said two silicon control switches are low voltage (LV) switches. ### Claim 16 (depends on 11) The power converter of claim 11, wherein said two silicon control switches comprise silicon field-effect transistors (FETs). ### Claim 17 (depends on 11) The power converter of claim 11, wherein said two depletion mode GaN transistors are selected from the group consisting of midvoltage (MV) transistors and high voltage (HV) transistors. ### Claim 18 (depends on 11) The power converter of claim 11, wherein said two depletion mode GaN transistors comprise GaN high electron mobility transistors (HEMTS). ### Claim 19 (depends on 11) The power converter of claim 11, wherein said power converter is a buck converter. ### Claim 20 (depends on 11) The power converter of claim 11, wherein said power converter is enclosed in a package configured to contain only two semiconductor dies.