# US 9,438,033 B2 · Apparatus and method for protecting RF and microwave integrated circuits > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 9,438,033 B2 - Document ID: US9438033B2 - Status: Granted - Kind: B2 - Application number: 14/084,350 - Filed: 2013-11-19 - Published: 2015-05-21 - Granted: 2016-09-06 - Earliest claimed: 2013-11-19 - Assignees: Analog Devices, Inc. - Applicants: Analog Devices, Inc. - Inventors: Srivatsan Parthasarathy; Rodrigo Carrillo-Ramirez - Web page: https://patentgrep.com/patent/US9438033B2 ## CPC - H02H 9/046: {responsive to excess voltage appearing at terminals of integrated circuits} - H02H 9/005: {avoiding undesired transient conditions} - H10D 89/611: {using diodes as protective elements} - H02H: EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS (indicating or signalling undesired working conditions G01R, e.g. G01R31/00, G08B; locating faults along lines G01R31/08; emergency protective devices H01H) - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract Electrostatic discharge (ESD) protection devices can protect electronic circuits. In the context of radio frequency (RF) circuits and the like, the insertion loss of conventional ESD protection devices can be undesirable. The amounts of parasitic capacitances at nodes of devices of an ESD protection device are not necessarily symmetrical, with respect to the substrate. Disclosed are techniques which decrease the parasitic capacitances at signal nodes, which improve the insertion loss characteristics of ESD protection devices. ## Claims ### Claim 1 An apparatus comprising an integrated circuit, the apparatus comprising: a first node configured to carry a signal; a second node configured to carry a voltage reference; a first voltage clamp of the integrated circuit, the first voltage clamp having an anode and a cathode, wherein a first parasitic capacitance associated with the anode and junction capacitance of the first voltage clamp is less than a second parasitic capacitance associated with the cathode and substrate capacitance of the first voltage clamp, wherein the anode is operatively coupled to the first node, and the cathode is operatively coupled to the second node, the first voltage clamp comprising at least a first rectifier; and a second voltage clamp of the integrated circuit, the second voltage clamp having an anode and a cathode, wherein a third parasitic capacitance associated with the cathode and junction capacitance of the second voltage clamp is less than a fourth parasitic capacitance associated with the anode and substrate capacitance of the second voltage clamp, wherein the anode is operatively coupled to the second node, and the cathode is operatively coupled to the first node, the second voltage clamp comprising at least a second rectifier. ### Claim 2 (depends on 1) The apparatus of claim 1, further comprising a termination resistance operatively coupled between the first node and the second node. ### Claim 3 (depends on 1) The apparatus of claim 1, wherein the first voltage clamp consists only of the first rectifier, wherein the second voltage clamp consists only of the second rectifier, and wherein the first rectifier and the second rectifier each consists of a diode. ### Claim 4 (depends on 1) The apparatus of claim 1, wherein the first voltage clamp consists only of the first rectifier, and wherein the first rectifier consists of a diode. ### Claim 5 (depends on 1) The apparatus of claim 1, wherein the second voltage clamp consists only of the second rectifier, and wherein the second rectifier consists of a diode. ### Claim 6 (depends on 1) The apparatus of claim 1, wherein the first voltage clamp comprises a first plurality of diodes arranged in series, wherein each diode of the first plurality has an anode and a cathode, wherein the anode of each diode of the first plurality has less parasitic capacitance than its cathode, wherein the second voltage clamp comprises a second plurality of diodes arranged in series, wherein each diode of the second plurality has an anode and a cathode, wherein the cathode of each diode of the second plurality has less parasitic capacitance than its anode. ### Claim 7 (depends on 1) The apparatus of claim 1, wherein the first voltage clamp comprises a first plurality of diodes arranged in series, wherein each diode of the first plurality has an anode and a cathode, wherein the anode of each diode of the first plurality has less parasitic capacitance than its cathode. ### Claim 8 (depends on 1) The apparatus of claim 1, wherein the second voltage clamp comprises a second plurality of diodes arranged in series, wherein each diode of the second plurality has an anode and a cathode, wherein the cathode of each diode of the second plurality has less parasitic capacitance than its anode. ### Claim 9 (depends on 1) The apparatus of claim 1, wherein the first and second voltage clamps each further comprises a thyristor. ### Claim 10 (depends on 1) The apparatus of claim 1, wherein the first voltage clamp further comprises a thyristor. ### Claim 11 (depends on 1) The apparatus of claim 1, wherein the second voltage clamp further comprises a thyristor. ### Claim 12 A method of protecting a radio frequency (RF) circuit from electrostatic discharge (ESD), the method comprising: carrying a signal with a first node; carrying a voltage reference with a second node; clamping a voltage of the first node with a first voltage clamp of the integrated circuit, the first voltage clamp having an anode and a cathode, wherein a first parasitic capacitance associated with the anode and junction capacitance of the first voltage clamp is less than a second parasitic capacitance associated with the cathode and substrate capacitance of the first voltage clamp, wherein the anode is operatively coupled to the first node, and the cathode is operatively coupled to the second node, the first voltage clamp comprising at least a first rectifier; and clamping the voltage of the first node with a second voltage clamp of the integrated circuit, the second voltage clamp having an anode and a cathode, wherein a third parasitic capacitance associated with the cathode and junction capacitance of the second voltage clamp is less than a fourth parasitic capacitance associated with the anode and substrate capacitance of the second voltage clamp, wherein the anode is operatively coupled to the second node, and the cathode is operatively coupled to the first node, the second voltage clamp comprising at least a second rectifier. ### Claim 13 (depends on 12) The method of claim 12, further comprising terminating a transmission line operatively coupled to the first node and the second node with a termination resistance. ### Claim 14 (depends on 12) The method of claim 12, wherein the first voltage clamp consists only of the first rectifier, wherein the second voltage clamp consists only of the second rectifier, and wherein the first rectifier and the second rectifier each consists of a diode. ### Claim 15 (depends on 12) The method of claim 12, wherein the first voltage clamp comprises a first plurality of diodes arranged in series, wherein each diode of the first plurality has an anode and a cathode, wherein the anode of each diode of the first plurality has less parasitic capacitance than its cathode, wherein the second voltage clamp comprises a second plurality of diodes arranged in series, wherein each diode of the second plurality has an anode and a cathode, wherein the cathode of each diode of the second plurality has less parasitic capacitance than its anode. ### Claim 16 (depends on 12) The method of claim 12, wherein the first and second voltage clamps each further comprises a thyristor. ### Claim 17 An apparatus comprising an integrated circuit, the apparatus comprising: a first node configured to carry a signal; a second node configured to carry a voltage reference; a means for clamping a voltage of the first node with a first voltage clamp of the integrated circuit, the first voltage clamp having an anode and a cathode, wherein a first parasitic capacitance associated with the anode and junction capacitance of the first voltage clamp is less than a second parasitic capacitance associated with the cathode and substrate capacitance of the first voltage clamp, wherein the anode is operatively coupled to the first node, and the cathode is operatively coupled to the second node; and a means for clamping the voltage of the first node with a second voltage clamp of the integrated circuit, the second voltage clamp having an anode and a cathode, wherein a third parasitic capacitance associated with the cathode and junction capacitance of the second voltage clamp is less than a fourth parasitic capacitance associated with the anode and substrate capacitance of the second voltage clamp, wherein the anode is operatively coupled to the second node, and the cathode is operatively coupled to the first node. ### Claim 18 (depends on 17) The apparatus of claim 17, further comprising a termination resistance operatively coupled between the first node and the second node.