# US 9,438,032 B2 · Semiconductor device

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- Number: US 9,438,032 B2
- Document ID: US9438032B2
- Status: Granted
- Kind: B2
- Application number: 14/470,223
- Filed: 2014-08-27
- Published: 2015-04-23
- Granted: 2016-09-06
- Earliest claimed: 2013-10-17
- Assignees: Fuji Electric Co., Ltd.
- Applicants: Fuji Electric Co., Ltd.
- Inventors: Morio Iwamizu
- Web page: https://patentgrep.com/patent/US9438032B2

## CPC

- H02H 9/025: {Current limitation using field effect transistors}
- H02H 7/205: {for controlled semi-conductors which are not included in a specific circuit arrangement}
- H02H 11/002: {in case of inverted polarity or connection; with switching for obtaining correct connection}
- H02H: EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS (indicating or signalling undesired working conditions G01R, e.g. G01R31/00, G08B; locating faults along lines G01R31/08; emergency protective devices H01H)

## Abstract

The semiconductor device includes a power chip including a switching element that switches a supply of power from a power supply to a load between an on-state and an off-state, a control chip in which is incorporated a control circuit that controls the switching element of the power chip, and a reverse connection protection circuit, provided in the control chip, that controls the switching element of the power chip into an on-state when the power supply is reverse-connected, wherein the reverse connection protection circuit has protective resistors, interposed between the control circuit and the positive electrode side of the power supply, and a control voltage formation circuit into which is input an intermediate voltage of the protective resistors and which forms a control voltage that controls the switching element of the power chip into an on-state when the power supply is reverse-connected.

## Claims

### Claim 1

A semiconductor device, comprising:
a power chip including a switching element that switches a supply of power from a power supply to a load between an on-state and an off-state;
a control chip in which is incorporated a control circuit that controls the switching element of the power chip; and
a reverse connection protection circuit, provided in the control chip, that controls the switching element of the power chip into an on-state when the power supply is reverse-connected, wherein
the reverse connection protection circuit has protective resistors, interposed between the control circuit and the positive electrode side of the power supply, and a control voltage formation circuit into which is input an intermediate voltage of the protective resistors and which forms a control voltage that controls the switching element of the power chip into an on-state when the power supply is reverse-connected, and
the protective resistors are of a configuration wherein the control circuit side is connected to the control chip substrate, and a substrate potential is provided.

### Claim 2 (depends on 1)

The semiconductor device according to claim 1, wherein the control voltage formation circuit having a voltage control semiconductor element into the input side terminal of which is the substrate potential formed by the protective resistors, and intermediate voltage of the voltage divider resistors is supplied to the gate terminal of the voltage control semiconductor element.

### Claim 3 (depends on 2)

The semiconductor device according to claim 2, wherein the control voltage formation circuit is such that a reverse blocking diode is connected in series with the voltage control semiconductor element.

### Claim 4 (depends on 2)

The semiconductor device according to claim 2, wherein the control voltage formation circuit is such that a second voltage control semiconductor element of a channel differing from that of the voltage control semiconductor element is connected in series with the voltage control semiconductor element.

### Claim 5 (depends on 4)

The semiconductor device according to claim 4, wherein the second voltage control semiconductor element is such that the gate terminal and input side terminal are short-circuited, and the back gate terminal is connected to the output terminal side of a third voltage control semiconductor element whose switching is controlled by a control signal.

### Claim 6 (depends on 2)

The semiconductor device according to claim 2, wherein the reverse connection protection circuit has a charge pump circuit into which is input control voltage output from the voltage control semiconductor element of the control voltage formation circuit, and the output of the charge pump circuit is supplied to the power chip.