# US 9,438,010 B1 · Vertical cavity surface emmiting laser

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- Number: US 9,438,010 B1
- Document ID: US9438010B1
- Status: Granted
- Kind: B1
- Application number: 14/678,414
- Filed: 2015-04-03
- Published: 2016-09-22
- Granted: 2016-09-06
- Earliest claimed: 2015-03-20
- Assignees: SAE Magnetics (H.K.) Ltd.
- Applicants: SAE Magnetics (H.K.) Ltd.
- Inventors: Babu Dayal Padullaparthi
- Web page: https://patentgrep.com/patent/US9438010B1

## CPC

- H01S 5/187: using Bragg reflection
- H01S 5/18311: {using selective oxidation}
- H01S 5/18347: {Mesa comprising active layer}
- H01S 5/18361: {Structure of the reflectors, e.g. hybrid mirrors}
- H01S 5/3407: {characterised by special barrier layers}
- H01S 5/34313: {with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs}
- H01S 5/3434: {with a well layer comprising at least both As and P as V-compounds}
- H01S 5/34386: {explicitly Al-free}
- H01S: DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL

## Abstract

A VCSEL according to the invention, configured to emit a light having about 850 nm wavelength, comprises an active region which comprises one or more InxGa1-xAs quantum wells; two or more GaAs1-yPy barriers bonding to the one or more quantum wells; and x ranges from 0.05 to 0.1, and y ranges from 0.2 to 0.29. The VCSEL has increased optical confinement and high transmission speed, good reliability characteristics, high-temperature performance, and long life time.

## Claims

### Claim 1

A vertical cavity surface emitting laser (VCSEL), configured to emit a light having about 850 nm wavelength, comprising:
an active region which comprises:
one or more InxGa1-xAs quantum wells; and
two or more GaAs1-yPy barriers bonding to the one or more quantum wells;
first and second phase matching layers; and
two reflecting mirror stacks sandwiching the active region;
wherein x ranges from 0.05 to 0.1, and y ranges from 0.2 to 0.29; and
wherein at least one of the reflecting mirror stacks includes an annular or polygonal oxide layer providing a current confinement structure sandwiched between the first and second phase matching layers.

### Claim 2 (depends on 1)

The VCSEL according to claim 1, wherein the active region further comprises one or more separate confinement heterostructure layers formed adjacent to the barriers, and the separate confinement heterostructure layers are made of AlGaAs.

### Claim 3 (depends on 2)

The VCSEL according to claim 2, wherein the separate confinement heterostructure layer is formed as a continuous ramp.

### Claim 4 (depends on 1)

The VCSEL according to claim 1, wherein the quantum well(s) and the barriers have a thickness ranging from 3 nm to 5 nm.

### Claim 5 (depends on 1)

The VCSEL according to claim 1, wherein the quantum well(s) and the barriers are grown on a substrate of un-doped GaAs or p-/n-doped with silicon.

### Claim 6 (depends on 1)

The VCSEL according to claim 1, further comprising a mesa structure and a passivation layer made by a low dielectric constant oxide or polymer or both covered on an outer surface of the mesa structure.

### Claim 7 (depends on 1)

The VCSEL according to claim 1, wherein at least one of the reflecting mirror stacks includes an annular oxide layer providing the current confinement structure.

### Claim 8 (depends on 1)

The VCSEL according to claim 1, wherein the at least one reflecting mirror stack that includes the annular or polygonal oxide layer is made by wet thermal oxidation, and the current confinement structure is in an oxide window.

### Claim 9 (depends on 1)

The VCSEL according to claim 1, wherein the barriers are tensile-strained and the one or more quantum wells is/are compressively strained so that the net strain is nearly zero and act as a strain compensated double structure (DHS) system.

### Claim 10

A vertical cavity surface emitting laser (VCSEL), comprising:
an active region which comprises:
one or more InxGa1-xAs quantum wells; and
two or more GaAs1-yPy barriers bonding to the one or more quantum wells;
first and second phase matching layers; and
two reflecting mirror stacks sandwiching the active region;
wherein there is a lack of transitional layers between the one or more quantum wells and the barriers;
wherein at least one of the reflecting mirror stacks includes an annular or polygonal oxide layer providing a current confinement structure sandwiched between the first and second phase matching layers;
wherein x ranges from 0.05 to 0.1, and y ranges from 0.2 to 0.29; and
wherein the VCSEL is configured to emit a light having about 850 nm wavelength.

### Claim 11 (depends on 10)

The VCSEL according to claim 10, wherein the active region further comprises one or more separate confinement heterostructure layers formed adjacent to the barriers, and the separate confinement heterostructure layers are made of AlGaAs.

### Claim 12 (depends on 11)

The VCSEL according to claim 11, wherein the separate confinement heterostructure layer is formed as a continuous ramp.

### Claim 13 (depends on 10)

The VCSEL according to claim 10, wherein the at least one reflecting mirror stack that includes the annular or polygonal oxide layer is made by wet thermal oxidation, and the current confinement structure is in an oxide window.

### Claim 14 (depends on 10)

The VCSEL according to claim 10, wherein the barriers are tensile-strained and the one or more quantum wells is/are compressively strained so that the net strain is nearly zero and act as a strain compensated double structure (DHS) system.

### Claim 15

A vertical cavity surface emitting laser (VCSEL) for an optical module used in data communications, comprising:
an active region which comprises:
one or more InxGa1-xAs quantum wells; and
two or more GaAs1-yPy barriers bonding to the one or more quantum wells, the barriers being tensile-strained;
first and second phase matching layers; and
two reflecting mirror stacks sandwiching the active region;
wherein at least one of the reflecting mirror stacks includes an annular or polygonal oxide layer providing a current confinement structure sandwiched between the first and second phase matching layers;
wherein the active region further comprises one or more separate confinement heterostructure layers formed adjacent to the barriers, the separate confinement heterostructure layer(s) being made of AlGaAs and being formed as a continuous ramp with no other transitional layers existing there-along;
wherein x ranges from 0.05 to 0.1, and y ranges from 0.2 to 0.29; and
wherein the VCSEL is configured to emit a light having about 850 nm wavelength.