# US 9,437,906 B2 · Electrode mesh galvanic cells

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- Number: US 9,437,906 B2
- Document ID: US9437906B2
- Status: Granted
- Kind: B2
- Application number: 14/245,611
- Filed: 2014-04-04
- Published: 2014-10-09
- Granted: 2016-09-06
- Earliest claimed: 2005-08-29
- Assignees: University of South Florida
- Applicants: Andres M. Cardenas-Valencia; Jay Dlutowski; Melynda C. Calves; John Bumgarner; Larry Langebrake
- Inventors: Andres M. Cardenas-Valencia; Jay Dlutowski; Melynda C. Calves; John Bumgarner; Larry Langebrake
- Web page: https://patentgrep.com/patent/US9437906B2

## CPC

- H01M 12/02: Details (of electrodes H01M4/00; of non-active parts H01M50/00)
- H01M 4/0426: {Sputtering}
- H01M 4/0473: {Filling tube-or pockets type electrodes; Applying active mass in cup-shaped terminals}
- H01M 4/0492: {Chemical attack of the support material}
- H01M 4/38: of elements or alloys
- H01M 4/8825: {Methods for deposition of the catalytic active composition}
- H01M 4/8878: {Treatment steps after deposition of the catalytic active composition or after shaping of the electrode being free-standing body}
- H01M 6/40: Printed batteries {, e.g. thin film batteries}
- H01M 12/04: composed of a half-cell of the fuel-cell type and of a half-cell of the primary-cell type
- H01M 12/065: {with plate-like electrodes or stacks of plate-like electrodes}
- H01M 12/08: composed of a half-cell of a fuel-cell type and a half-cell of the secondary-cell type
- H01M 4/134: Electrodes based on metals, Si or alloys
- H01M 4/92: Metals of platinum group (H01M4/94 {, H01M4/9058} take precedence)
- Y02E 60/10: Energy storage using batteries
- Y02P 70/50: Manufacturing or production processes characterised by the final manufactured product
- Y10T 29/49115: including coating or impregnating
- H01M: PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02P: CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

## Abstract

The present invention is directed to the fabrication of thin aluminum anode batteries using a highly reproducible process that enables high volume manufacturing of the galvanic cells. A thin aluminum anode galvanic cell having a meshed structure is provided which includes a catalytic metal layer positioned on a patterned silicon substrate, an etched dielectric layer positioned to cover the catalytic metal layer, the catalytic metal layer serving as an etch stop for the etched dielectric layer and an etched aluminum layer positioned to cover the dielectric layer, the dielectric layer serving as an etch stop for the etched aluminum layer.

## Claims

### Claim 1

A thin aluminum anode galvanic cell on a silicon wafer, the cell comprising:
a catalytic metal layer positioned on a patterned silicon substrate;
an etched dielectric layer positioned to cover the catalytic metal layer, the catalytic metal layer serving as an etch stop for the etched dielectric layer; and
an etched aluminum layer positioned to cover the dielectric layer, the dielectric layer serving as an etch stop for the etched aluminum layer.

### Claim 2 (depends on 1)

The galvanic cell of claim 1, further comprising an adhesive layer positioned between the patterned silicon substrate and the catalytic metal layer.

### Claim 3 (depends on 2)

The galvanic cell of claim 2, wherein the adhesive layer is selected from the group consisting of titanium nitride, silicon nitride and aluminum nitride.

### Claim 4 (depends on 2)

The galvanic cell of claim 2, wherein the adhesive layer is a layer of titanium nitride that is about 10 nm thick.

### Claim 5 (depends on 1)

The galvanic cell of claim 1, wherein the catalytic metal layer is selected from the group consisting of silver, platinum, nickel and copper.

### Claim 6 (depends on 1)

The galvanic cell of claim 1, wherein the catalytic metal layer is layer of platinum that is about 100 nm thick.

### Claim 7 (depends on 1)

The galvanic cell of claim 1, wherein the dielectric layer is a silicon dioxide layer.

### Claim 8 (depends on 1)

The galvanic cell of claim 1, wherein the dielectric layer is a silicon nitride layer.

### Claim 9 (depends on 1)

The galvanic cell of claim 1, wherein the aluminum layer is about 300 nm thick.