# US 9,437,844 B2 · Display device and method for manufacturing the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 9,437,844 B2 - Document ID: US9437844B2 - Status: Granted - Kind: B2 - Application number: 14/505,560 - Filed: 2014-10-03 - Published: 2015-08-27 - Granted: 2016-09-06 - Earliest claimed: 2014-02-24 - Assignees: Samsung Display Co., Ltd. - Applicants: Samsung Display Co., Ltd. - Inventors: Seong-Min Lee; Sun-Hwa Kim; Hyun-Shik Lee; Hyo-min Kim; Hyuk-Sang Jun; Ju-kyung Jo - Web page: https://patentgrep.com/patent/US9437844B2 ## CPC - H10K 59/1315: {comprising structures specially adapted for lowering the resistance} - H10K 59/122: Pixel-defining structures or layers, e.g. banks - H10K 59/878: {comprising reflective means} - H10K 71/40: Thermal treatment, e.g. annealing in the presence of a solvent vapour - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES ## Abstract A display device includes a substrate, a first electrode on the substrate, a pixel defining layer on the substrate, the pixel defining layer having an opening exposing the first electrode, a metal layer on the pixel defining layer, a light emission layer on the first electrode exposed by the opening, and a second electrode on the light emission layer in the opening. The metal layer contacts the second electrode. ## Claims ### Claim 1 A display device, comprising: a substrate; a first electrode on the substrate; a pixel defining layer on the substrate, having an opening exposing the first electrode; a metal layer only on the pixel defining layer; a light emission layer on the first electrode exposed by the opening; and a second electrode on the light emission layer in the opening, wherein the metal layer directly contacts the second electrode. ### Claim 2 (depends on 1) The display device as claimed in claim 1, further including a dielectric layer on the metal layer. ### Claim 3 (depends on 2) The display device as claimed in claim 2, wherein the dielectric layer includes at least one of the group of lithium fluoride (LiF), tungsten trioxide (WO3), titanium dioxide (TiO2), aluminum oxide (Al2O3), zinc oxide (ZnO), zinc sulfide (ZnS), and silver oxide (AgO). ### Claim 4 (depends on 2) The display device as claimed in claim 2, wherein the dielectric layer includes a same material as the pixel defining layer. ### Claim 5 (depends on 2) The display device as claimed in claim 2, wherein the dielectric layer has a refractive index of about 1 to about 5. ### Claim 6 (depends on 2) The display device as claimed in claim 2, wherein the dielectric layer is on the second electrode. ### Claim 7 (depends on 1) The display device as claimed in claim 1, wherein the pixel defining layer includes a protrusion. ### Claim 8 (depends on 7) The display device as claimed in claim 7, wherein the metal layer covers at least one of a top surface and side surfaces of the protrusion. ### Claim 9 (depends on 1) The display device as claimed in claim 1, wherein the metal layer includes at least one of the group of chromium (Cr), molybdenum (Mo), silver (Ag), aluminum (Al), gold (Au), and copper (Cu). ### Claim 10 (depends on 1) The display device as claimed in claim 1, wherein a side of the second electrode directly contacts a side of the metal layer. ### Claim 11 (depends on 1) The display device as claimed in claim 1, wherein the second electrode does not overlap the metal layer. ### Claim 12 A method of manufacturing a display device, the method comprising: forming a first electrode on a substrate; forming a pixel defining layer on the substrate, the pixel defining layer having an opening exposing the first electrode; forming a metal layer only on the pixel defining layer; forming a light emission layer on the first electrode exposed by the opening; and forming a second electrode on the light emission layer in the opening, the second electrode directly contacting the metal layer. ### Claim 13 (depends on 12) The method as claimed in claim 12, wherein forming the pixel defining layer and the metal layer includes: coating a photosensitive organic material onto the substrate and the first electrode; coating a photosensitive metal material onto the photosensitive organic material; exposing the photosensitive organic material and the photosensitive metal material to light using a mask; forming the pixel defining layer and the opening exposing the first electrode and by developing the exposed photosensitive organic material and photosensitive metal material; and forming the metal layer by heat treating the photosensitive metal material. ### Claim 14 (depends on 13) The method as claimed in claim 13, wherein the heat treating is performed at a temperature of about 200° C. to about 300° C. ### Claim 15 (depends on 12) The method as claimed in claim 12, further comprising forming a dielectric layer on the metal layer. ### Claim 16 (depends on 12) The method as claimed in claim 12, further comprising forming a dielectric layer on the metal layer and the second electrode. ### Claim 17 (depends on 15) The method as claimed in claim 15, wherein forming the pixel defining layer, the metal layer, and the dielectric layer includes: coating a first photosensitive organic material onto the substrate and the first electrode; coating a photosensitive metal material onto the first photosensitive organic material; coating a second photosensitive organic material onto the photosensitive metal material; exposing the first photosensitive organic material, the photosensitive metal material, and the second photosensitive organic material to light using a mask; developing the exposed first photosensitive organic material, photosensitive metal material, and second photosensitive organic material to form the pixel defining layer, the dielectric layer, and the opening exposing the first electrode; and forming the metal layer by heat treating the photosensitive metal material. ### Claim 18 (depends on 15) The method as claimed in claim 15, wherein the dielectric layer includes at least one of lithium fluoride (LiF), tungsten trioxide (WO3), titanium dioxide (TiO2), aluminum oxide (Al2O3), zinc oxide (ZnO), zinc sulfide (ZnS), and silver oxide (AgO). ### Claim 19 (depends on 15) The method as claimed in claim 15, wherein the dielectric layer includes a same material as the pixel defining layer. ### Claim 20 (depends on 12) The method as claimed in claim 12, wherein the metal layer includes at least one of chromium (Cr), molybdenum (Mo), silver (Ag), aluminum (Al), gold (Au), and copper (Cu).