# US 9,437,821 B2 · Method for manufacturing electronic device

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- Number: US 9,437,821 B2
- Document ID: US9437821B2
- Status: Granted
- Kind: B2
- Application number: 14/434,518
- Filed: 2013-10-07
- Published: 2015-10-01
- Granted: 2016-09-06
- Earliest claimed: 2012-10-15
- Assignees: Sumitomo Chemical Company, Limited
- Applicants: Sumitomo Chemical Company, Limited
- Inventors: Kouichi Rokuhara; Shuichi Sassa
- Web page: https://patentgrep.com/patent/US9437821B2

## CPC

- H10K 85/151: {Copolymers}
- H10D 30/67: Thin-film transistors [TFT] {(Stacked nanowire, nanosheet or nanoribbon FETs H10D30/501)}
- H10K 71/00: Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K 71/12: using liquid deposition, e.g. spin coating
- H10K 71/80: using temporary substrates
- C08G 61/12: Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule
- C08G 2261/124: alternating
- C08G 2261/135: Cross-linked structures
- C08G 2261/141: Side-chains having aliphatic units
- C08G 2261/3142: fluorene-based, e.g. fluorene, indenofluorene, or spirobifluorene
- C08G 2261/3162: Arylamines
- C08G 2261/5222: electrofluorescent
- C08G 2261/76: crosslinking
- C08G 2261/95: Use in organic luminescent diodes
- H10K 10/46: Field-effect transistors, e.g. organic thin-film transistors [OTFT] (H10K10/43 takes precedence)
- H10K 10/80: Constructional details
- H10K 30/50: Photovoltaic [PV] devices
- H10K 30/80: Constructional details
- H10K 50/10: OLEDs or polymer light-emitting diodes [PLED]
- H10K 50/15: Hole transporting layers
- H10K 71/811: {Controlling the atmosphere during processing (H10K71/40 takes precedence)}
- H10K 85/1135: {Polyethylene dioxythiophene [PEDOT]; Derivatives thereof}
- H10K 85/115: {Polyfluorene; Derivatives thereof}
- H10K 2102/103: {comprising indium oxides, e.g. ITO}
- Y02E 10/549: Organic PV cells
- Y02P 70/50: Manufacturing or production processes characterised by the final manufactured product
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- C08G: MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02P: CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS

## Abstract

When a thin film is formed by an application method, damage to a substrate or existing electrodes and functional layers can be reduce. A method for manufacturing an electronic device comprising two or more electrodes, and an organic thin film provided between the two or more electrodes, the method comprising the steps of: forming a coating film by applying a coating liquid that comprises a material having a crosslinking group, and forming the organic thin film by repeating an irradiation of electromagnetic waves to the coating film to cross-link with the crosslinking group.

## Claims

### Claim 1

A method for manufacturing an electronic device comprising two or more electrodes and an organic thin film provided between the two or more electrodes, the method comprising the steps of:
forming a coating film by applying a coating liquid that comprises a material having a crosslinking group, and
forming the organic thin film by repeating an irradiation of electromagnetic waves to the coating film to cross-link with the crosslinking group,
wherein the source of the electromagnetic waves is a xenon flash lamp, and
wherein at the step of forming the organic thin film, the organic thin film is formed by repeating the irradiation the electromagnetic waves through a filter such that a transmittance of electromagnetic waves wavelength of Which is equal to 400 nm or less is equal to 10% or less.

### Claim 2 (depends on 1)

The method for manufacturing the electronic device according to claim 1, wherein
the electronic device is an organic electroluminescent element, an organic photovoltaic device, or an organic thin film transistor.

### Claim 3 (depends on 1)

The method for manufacturing the electronic device according to claim 1, wherein
the step of forming the organic thin film is carried out by preparing a flexible substrate that is wound on an unwind roll, and unwinding the flexible substrate from the unwind roll and winding the flexible substrate up a wind-up roll.

### Claim 4 (depends on 1)

The method for manufacturing the electronic device according to claim 1, wherein
the step of forming the organic thin film is carried out such that the peak energy of a pulse of the electromagnetic waves is equal to 15.0 kW/cm2 or less.

### Claim 5 (depends on 1)

The method for manufacturing the electronic device according to claim 1, wherein
the step of forming the organic thin film is carried out such that the pulse width per pulse of the electromagnetic waves is equal to 160 μs or less.

### Claim 6

A method for manufacturing a thin film, the method comprising the steps of:
forming a coating film by applying a coating liquid that comprises a material having a crosslinking group, and
forming the thin film by repeating an irradiation of electromagnetic waves to the coating film to cross-link with the crosslinking group,
wherein the source of the electromagnetic waves is a xenon flash lamp, and
wherein at the step of forming the thin film, the thin film is formed by repeating the irradiation of the electromagnetic waves through a filter such that a transmittance of electromagnetic waves wavelength of which is equal to 400 nm or less is equal to 10% or less.