# US 9,437,805 B2 · Piezoelectric thin film element

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- Number: US 9,437,805 B2
- Document ID: US9437805B2
- Status: Granted
- Kind: B2
- Application number: 14/053,902
- Filed: 2013-10-15
- Published: 2014-02-20
- Granted: 2016-09-06
- Earliest claimed: 2011-04-15
- Assignees: Murata Manufacturing Co., Ltd.
- Applicants: Murata Manufacturing Co., Ltd.
- Inventors: Hiroshi Shiraki
- Web page: https://patentgrep.com/patent/US9437805B2

## CPC

- H10N 30/8542: {Alkali metal based oxides, e.g. lithium, sodium or potassium niobates}
- C04B 35/495: based on vanadium, niobium, tantalum, molybdenum or tungsten oxides or solid solutions thereof with other oxides, e.g. vanadates, niobates, tantalates, molybdates or tungstates
- C23C 18/1216: {Metal oxides (C23C18/1212 takes precedence)}
- C23C 18/1225: {Deposition of multilayers of inorganic material}
- H10N 30/077: by liquid phase deposition
- H10N 30/078: by sol-gel deposition
- H10N 30/704: {based on piezoelectric or electrostrictive films or coatings}
- C04B 2235/3201: Alkali metal oxides or oxide-forming salts thereof
- C04B 2235/3208: Calcium oxide or oxide-forming salts thereof, e.g. lime
- C04B 2235/3213: Strontium oxides or oxide-forming salts thereof
- C04B 2235/3215: Barium oxides or oxide-forming salts thereof
- C04B 2235/3248: Zirconates or hafnates, e.g. zircon
- C04B 2235/3251: Niobium oxides, niobates, tantalum oxides, tantalates, or oxide-forming salts thereof
- C04B 2235/3293: Tin oxides, stannates or oxide forming salts thereof, e.g. indium tin oxide [ITO]
- C04B 2235/6562: Heating rate
- C04B 2235/6567: Treatment time
- C04B 2235/79: Non-stoichiometric products, e.g. perovskites (ABO3) with an A/B-ratio other than 1
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- C04B: LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE {(roofing granules E04D7/005)}; CERAMICS (devitrified glass-ceramics C03C10/00); REFRACTORIES; TREATMENT OF NATURAL STONE
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)

## Abstract

A piezoelectric thin film element that includes a substrate, a lower electrode on the substrate, a piezoelectric film on the lower electrode, and an upper electrode on the piezoelectric film. The piezoelectric film is a potassium sodium niobate film represented, as its main constituent, by the general formula (1−n)(K1-xNax)NbyO3-nM1M2O3 in which M1 is any one of Ca, Sr, and Ba, and M2 is Zr, and x, y, and n respectively are within the ranges of: 0.25≦x≦1.00; 0.85≦y≦1.10; and 0.01≦n≦0.10. Alternatively, M2 is any one of Sn and Hf, and x, y, and n respectively are within the ranges of: 0.25≦x≦1.00; 0.90≦y≦1.05; and 0.01≦n≦0.10.

## Claims

### Claim 1

A piezoelectric thin film element comprising:
an electrode; and
a piezoelectric film adjacent the electrode,
wherein the piezoelectric film is a potassium sodium niobate film containing the general formula (1−n)(K1-xNax)NbyO3-nBaZrO3 as its main constituent, and x, y, and n respectively are within the ranges of: 0.25≦x≦0.75; 0.85≦y≦1.10; and 0.01≦n≦0.10.

### Claim 2 (depends on 1)

The piezoelectric thin film element according to claim 1, further comprising a substrate adjacent the electrode.

### Claim 3 (depends on 2)

The piezoelectric thin film element according to claim 2, wherein the substrate is one of a silicon substrate, a glass substrate, a quartz glass substrate, a GaAs substrate, a GaN substrate, a CaF2 substrate, a sapphire substrate, an MgO substrate, an SrTiO3 substrate, an LaAlO3 substrate, and a stainless-steel substrate.

### Claim 4 (depends on 1)

The piezoelectric thin film element according to claim 1, wherein the piezoelectric film has a thickness of 300 nm.

### Claim 5

A piezoelectric thin film element comprising:
an electrode; and
a piezoelectric film adjacent the electrode,
wherein the piezoelectric film is a potassium sodium niobate film containing the general formula (1−n)(K1-xNax)NbyO3-nBaSnO3 as its main constituent, and x, y, and n respectively are within the ranges of: 0.25≦x≦0.75; 0.90≦y≦1.05; and 0.01≦n≦0.10.

### Claim 6 (depends on 5)

The piezoelectric thin film element according to claim 5, further comprising a substrate adjacent the electrode.

### Claim 7 (depends on 6)

The piezoelectric thin film element according to claim 6, wherein the substrate is one of a silicon substrate, a glass substrate, a quartz glass substrate, a GaAs substrate, a GaN substrate, a CaF2 substrate, a sapphire substrate, an MgO substrate, an SrTiO3 substrate, an LaAlO3 substrate, and a stainless-steel substrate.

### Claim 8 (depends on 5)

The piezoelectric thin film element according to claim 5, wherein the piezoelectric film has a thickness of 300 nm.

### Claim 9

A piezoelectric thin film element comprising:
an electrode; and
a piezoelectric film adjacent the electrode,
wherein the piezoelectric film is a potassium sodium niobate film represented, as its main constituent, by the general formula (1−n)(K1-xNax) NbyO3-nM1M2O3 in which M1 is any one of Ca, Sr, and Ba, M2 is Zr, and x, y, and n respectively are within the ranges of: 0.25≦x≦1.00; 0.85≦y≦1.10; and 0.01≦n≦0.10.

### Claim 10 (depends on 9)

The piezoelectric thin film element according to claim 9, wherein x is within the range of 0.80≦x≦1.00.

### Claim 11 (depends on 9)

The piezoelectric thin film element according to claim 9, further comprising a substrate adjacent the electrode.

### Claim 12 (depends on 11)

The piezoelectric thin film element according to claim 11, wherein the substrate is one of a silicon substrate, a glass substrate, a quartz glass substrate, a GaAs substrate, a GaN substrate, a CaF2 substrate, a sapphire substrate, an MgO substrate, an SrTiO3 substrate, an LaAlO3 substrate, and a stainless-steel substrate.

### Claim 13 (depends on 9)

The piezoelectric thin film element according to claim 9, wherein the piezoelectric film has a thickness of 300 nm.

### Claim 14

A piezoelectric thin film element comprising:
an electrode; and
a piezoelectric film adjacent the electrode,
wherein the piezoelectric film is a potassium sodium niobate film represented, as its main constituent, by the general formula (1−n)(K1-xNax) NbyO3-nM1M2O3 in which M1 is any one of Ca, Sr, and Ba, M2 is any one of Sn and Hf, and x, y, and n respectively are within the ranges of: 0.25≦x≦1.00; 0.90≦y≦1.05; and 0.01≦n≦0.10.

### Claim 15 (depends on 14)

The piezoelectric thin film element according to claim 14, wherein x is within the range of 0.80≦x≦1.00.

### Claim 16 (depends on 14)

The piezoelectric thin film element according to claim 14, further comprising a substrate adjacent the electrode.

### Claim 17 (depends on 16)

The piezoelectric thin film element according to claim 16, wherein the substrate is one of a silicon substrate, a glass substrate, a quartz glass substrate, a GaAs substrate, a GaN substrate, a CaF2 substrate, a sapphire substrate, an MgO substrate, an SrTiO3 substrate, an LaAlO3 substrate, and a stainless-steel substrate.

### Claim 18 (depends on 14)

The piezoelectric thin film element according to claim 14, wherein the piezoelectric film has a thickness of 300 nm.