# US 9,437,795 B2 · Thermoelectric device and method of manufacturing the same

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- Number: US 9,437,795 B2
- Document ID: US9437795B2
- Status: Granted
- Kind: B2
- Application number: 14/731,989
- Filed: 2015-06-05
- Published: 2015-09-24
- Granted: 2016-09-06
- Earliest claimed: 2013-11-08
- Assignees: Electronics and Telecommunications Research Institute
- Applicants: Electronics and Telecommunications Research Institute
- Inventors: Dong Suk Jun; Moon Gyu Jang; Won Chul Choi
- Web page: https://patentgrep.com/patent/US9437795B2

## CPC

- H10N 10/851: comprising inorganic compositions
- H10N 10/01: Manufacture or treatment
- H10N 10/80: Constructional details
- H10N 10/857: comprising compositions changing continuously or discontinuously inside the material
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR

## Abstract

Provided are a thermoelectric device and a method of manufacturing the same. The method may include forming nanowires on a substrate, forming a barrier layer on the nanowires, forming a bulk layer on the barrier layer, forming a lower electrode under the substrate, and forming an upper electrode on the bulk layer.

## Claims

### Claim 1

A thermoelectric device comprising:
first and second cooling pads;
first and second lower electrodes that are respectively disposed on the first and second cooling pads;
first and second substrates that are respectively disposed on the first and second lower electrodes;
first and second nanowires that are respectively disposed on the first and second substrates;
first and second barrier layers that are respectively disposed on the first and second nanowires;
first and second bulk layers that are respectively disposed on the first and second barrier layers;
first and second upper electrodes respectively on the first and second bulk layers; and
a heater pad that is disposed on the first and second upper electrodes and connects the first and second upper electrodes,
wherein the first and second barrier layers increase electric conductivity between the first and second nanowires and the first and second bulk layers, and decrease thermal conductivity therebetween.

### Claim 2 (depends on 1)

The thermoelectric device of claim 1, wherein the first and second substrates respectively comprise first and second trenches in which the first and second nanowires are inserted.

### Claim 3 (depends on 1)

The thermoelectric device of claim 1, further comprising first and second polymer layers that are respectively formed between the first and second nanowires.

### Claim 4 (depends on 3)

The thermoelectric device of claim 3, wherein the first and second polymer layers respectively comprise polyimide.

### Claim 5 (depends on 1)

The thermoelectric device of claim 1, wherein the first and second barrier layers respectively comprise a rare metal or a rare earth metal.

### Claim 6 (depends on 1)

The thermoelectric device of claim 1, wherein the first and second substrates respectively comprise crystalline silicon that is doped with a conductive impurity.