# US 9,437,789 B2 · Light generating device and method of manufacturing the same

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- Number: US 9,437,789 B2
- Document ID: US9437789B2
- Status: Granted
- Kind: B2
- Application number: 14/224,972
- Filed: 2014-03-25
- Published: 2014-09-25
- Granted: 2016-09-06
- Earliest claimed: 2013-03-25
- Assignees: Intellectual Discovery Co., Ltd.
- Applicants: Intellectual Discovery Co., Ltd.
- Inventors: Tae-Geun Kim; Sang-Young Park
- Web page: https://patentgrep.com/patent/US9437789B2

## CPC

- H10H 20/856: Reflecting means
- H10H 20/8312: {extending at least partially through the bodies}
- H10H 20/82: Roughened surfaces, e.g. at the interface between epitaxial layers
- H10H 20/835: {Reflective materials}
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS

## Abstract

A light generating device and a method of manufacturing the light generating device are disclosed. The light generating device includes a p-type semiconductor layer, an n-type semiconductor layer, an active layer, a p-type electrode and an n-type electrode. The active layer is disposed between the p-type semiconductor layer and the n-type semiconductor layer. The p-type electrode provides the p-type semiconductor layer with holes. The n-type electrode provides the n-type semiconductor layer with electrons. At least one of the p-type electrode and n-type electrode has a protrusion protruding toward p-type semiconductor layer and the n-type semiconductor layer, respectively. Therefore, light efficiency is enhanced.

## Claims

### Claim 1

A light generating device comprising:
a p-type semiconductor layer;
an n-type semiconductor layer;
an active layer disposed between the p-type semiconductor layer and the n-type semiconductor layer;
a p-type electrode providing the p-type semiconductor layer with holes; and
an n-type electrode providing the n-type semiconductor layer with electrons, wherein at
least one of the p-type electrode and n-type electrode has a protrusion protruding toward p-type semiconductor layer and the n-type semiconductor layer, respectively, and
wherein the at least one of the p-type electrode and n-type electrode having a protrusion includes at least one of nickel (Ni) and gold (Au), and the protrusion is directly covered by a light reflecting layer including at least one of aluminum (Al) and silver (Ag).

### Claim 2 (depends on 1)

The light generating device of claim 1, wherein the protrusion has V-shape or U-shape.

### Claim 3 (depends on 1)

The light generating device of claim 1, further comprising an ohmic contact layer covering the light reflecting layer.

### Claim 4 (depends on 3)

The light generating device of claim 3, wherein
the ohmic contact layer includes at least one of titanium (Ti) and chromium (Cr).

### Claim 5 (depends on 1)

The light generating device of claim 1, further comprising an insulating layer covering the light reflecting layer.

### Claim 6 (depends on 5)

The light generating device of claim 5, wherein the insulating layer includes silicon oxide (SiO2) or silicon nitride (SiN).