# US 9,437,784 B2 · Light emitting device

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 9,437,784 B2
- Document ID: US9437784B2
- Status: Granted
- Kind: B2
- Application number: 13/841,271
- Filed: 2013-03-15
- Published: 2014-05-01
- Granted: 2016-09-06
- Earliest claimed: 2012-10-29
- Assignees: LG Innotek Co., Ltd.
- Applicants: LG Innotek Co., Ltd.
- Inventors: Gun Kyo Lee
- Web page: https://patentgrep.com/patent/US9437784B2

## CPC

- H10H 20/84: Coatings, e.g. passivation layers or antireflective coatings
- F21K 9/23: Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
- H10H 20/831: characterised by their shape
- H10H 20/8514: {characterised by their shape, e.g. plate or foil}
- H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls
- F21V 29/77: with essentially identical diverging planar fins or blades, e.g. with fan-like or star-like cross-section
- F21V 29/83: the elements having apertures, ducts or channels, e.g. heat radiation holes
- F21Y 2115/10: Light-emitting diodes [LED]
- H10H 20/8515: {not being in contact with the bodies}
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- F21K: NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21V: FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21Y: INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED

## Abstract

Disclosed is a light emitting device including a light emitting structure comprising a first semiconductor layer, an active layer and a second semiconductor layer, a phosphor plate disposed on the second semiconductor layer, a first electrode portion disposed on the phosphor plate, and a plurality of bonding portions disposed between the light emitting structure and the phosphor plate, the bonding portions bonding the phosphor plate to the light emitting structure, wherein each bonding portion includes at least one first bonding portion electrically connected to the first electrode portion.

## Claims

### Claim 1

A light emitting device comprising:
a light emitting structure comprising a first semiconductor layer, an active layer and a second semiconductor layer;
a pad disposed on the second semiconductor layer;
an extension electrode extending from the pad and disposed on the second semiconductor layer;
a phosphor plate disposed on the second semiconductor layer;
a first electrode disposed on the phosphor plate;
at least one first bonding portion disposed between a portion of the first electrode passing through the phosphor plate and the second semiconductor layer; and
at least one second bonding portion disposed between a lower surface of the phosphor plate and an upper surface of the extension electrode,
wherein the at least one first bonding portion contacts the portion of the first electrode passing through the phosphor plate, and
wherein an upper surface of the at least one second bonding portion contacts only the lower surface of the phosphor plate and is spaced from the first electrode.

### Claim 2 (depends on 1)

The light emitting device according to claim 1, wherein the first electrode comprises:
a pad portion disposed on an upper surface of the phosphor plate; and
a connection portion passing through the phosphor plate and connecting the pad portion to the first bonding portion, and
wherein the at least one second bonding portion is spaced from the connection portion.

### Claim 3 (depends on 2)

The light emitting device according to claim 2, wherein the second bonding portion comprises:
a first bonding layer disposed on the lower surface of the phosphor plate; and
a second bonding layer disposed on the light emitting structure and bonded to the first bonding layer.

### Claim 4 (depends on 2)

The light emitting device according to claim 2, wherein the first bonding portion comprises:
a first bonding electrode disposed on the second semiconductor layer; and
a second bonding electrode disposed on the lower surface of the phosphor plate and on the connection portion, and bonded to the first bonding electrode.

### Claim 5 (depends on 4)

The light emitting device according to claim 4, wherein the second bonding electrode is fused to the first bonding electrode.

### Claim 6 (depends on 5)

The light emitting device according to claim 5, wherein a fused interface is present between the first bonding electrode and the second bonding electrode.

### Claim 7 (depends on 4)

The light emitting device according to claim 4, wherein a melting point of the second bonding electrode is different from a melting point of the first bonding electrode.

### Claim 8 (depends on 2)

The light emitting device according to claim 2, wherein the first electrode further comprises an extension electrode disposed on the second semiconductor layer, and
wherein the first bonding portion comprises a third bonding electrode disposed between the connection portion and the extension electrode, and bonds the connection portion to the extension electrode.

### Claim 9 (depends on 8)

The light emitting device according to claim 8, wherein a melting point of the third bonding electrode is different from a melting point of the extension electrode.

### Claim 10 (depends on 9)

The light emitting device according to claim 9, wherein the third bonding electrode is fused to the extension electrode.

### Claim 11 (depends on 10)

The light emitting device according to claim 10, wherein a fused interface is present between the third bonding electrode and the extension electrode.

### Claim 12 (depends on 8)

The light emitting device according to claim 8, wherein a width of one portion of the extension electrode bonded to the third bonding electrode is different from a width of another portion of the extension electrode.

### Claim 13 (depends on 8)

The light emitting device according to claim 8, wherein a width of the third bonding electrode is smaller than or equivalent to width of the extension electrode.

### Claim 14 (depends on 1)

The light emitting device according to claim 1, wherein an air void (gap) is present between the phosphor plate and the light emitting structure.

### Claim 15 (depends on 2)

The light emitting device according to claim 2, wherein the first electrode further comprises an extension electrode disposed on the second semiconductor layer,
wherein the first bonding portion comprises a third bonding electrode being disposed between a lower surface of the phosphor plate and the extension electrode and bonding the phosphor plate to the extension electrode, and
wherein the third bonding electrode is arranged in the extension electrode.

### Claim 16 (depends on 15)

The light emitting device according to claim 15, wherein the first bonding portion further comprises a bonding electrode being disposed between the connection portion and the extension electrode and bonding the connection portion to the extension electrode.

### Claim 17 (depends on 4)

The light emitting device according to claim 4, wherein the first bonding electrode and the second bonding electrode comprise at least one identical metal.

### Claim 18 (depends on 2)

The light emitting device according to claim 2, wherein the pad portion is disposed at a side of the phosphor plate.

### Claim 19

A light emitting device package comprising:
a package body;
a first lead frame and a second lead frame disposed on the package body;
a light emitting device disposed on the second lead frame; and
a resin layer surrounding the light emitting device,
wherein the light emitting device comprises:
a light emitting structure comprising a first semiconductor layer, an active layer and a second semiconductor layer;
a pad disposed on the second semiconductor layer;
an extension electrode extending from the pad and disposed on the second semiconductor layer;
a phosphor plate disposed on the second semiconductor layer;
a first electrode disposed on the phosphor plate;
at least one first bonding portion disposed between a portion of the first electrode passing through the phosphor plate and the second semiconductor layer; and
at least one second bonding portion disposed between a lower surface of the phosphor plate and an upper surface of the extension electrode,
wherein the at least one first bonding portion contacts the portion of the first electrode passing through the phosphor plate, and
wherein an upper surface of the at least one second bonding portion contacts only the lower surface of the phosphor plate and is spaced from the first electrode.